关注
Albert B Chen
Albert B Chen
其他姓名Albert Chen, Albert B. K. Chen
Intel
在 seas.upenn.edu 的电子邮件经过验证
标题
引用次数
引用次数
年份
13.2 A 3.6Mb 10.1Mb/mm2 Embedded Non-Volatile ReRAM Macro in 22nm FinFET Technology with Adaptive Forming/Set/Reset Schemes Yielding Down to 0.5V …
P Jain, U Arslan, M Sekhar, BC Lin, L Wei, T Sahu, J Alzate-Vinasco, ...
2019 IEEE International Solid-State Circuits Conference-(ISSCC), 212-214, 2019
1402019
Purely Electronic Switching with High Uniformity, Resistance Tunability, and Good Retention in Pt‐Dispersed SiO2 Thin Films for ReRAM
BJ Choi, ABK Chen, X Yang, IW Chen
Advanced Materials 23 (33), 3847-3852, 2011
1262011
A size-dependent nanoscale metal–insulator transition in random materials
ABK Chen, SG Kim, Y Wang, WS Tung, IW Chen
Nature Nanotechnology 6 (4), 237-241, 2011
772011
Non-volatile RRAM embedded into 22FFL FinFET technology
O Golonzka, U Arslan, P Bai, M Bohr, O Baykan, Y Chang, A Chaudhari, ...
2019 Symposium on VLSI Technology, T230-T231, 2019
682019
A Parallel Circuit Model for Multi‐State Resistive‐Switching Random Access Memory
ABK Chen, BJ Choi, X Yang, IW Chen
Advanced Functional Materials 22 (3), 546-554, 2012
422012
Demonstration and modeling of multi-bit resistance random access memory
X Yang, ABK Chen, B Joon Choi, IW Chen
Applied Physics Letters 102 (4), 2013
342013
Cause and prevention of moisture-induced degradation of resistance random access memory nanodevices
X Yang, BJ Choi, ABK Chen, IW Chen
ACS nano 7 (3), 2302-2311, 2013
332013
Resolving voltage–time dilemma using an atomic-scale lever of subpicosecond electron–phonon interaction
X Yang, I Tudosa, BJ Choi, ABK Chen, IW Chen
Nano Letters 14 (9), 5058-5067, 2014
262014
eNVM RRAM reliability performance and modeling in 22FFL FinFET technology
YF Chang, JA O'Donnell, T Acosta, R Kotlyar, A Chen, PA Quintero, ...
2020 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2020
132020
Embedded emerging memory technologies for neuromorphic computing: Temperature instability and reliability
YF Chang, I Karpov, R Hopkins, D Janosky, J Medeiros, B Sherrill, ...
2021 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2021
72021
Non-volatile resistance-switching thin film devices
IW Chen, SG Kim, A Chen, Y Wang
US Patent 9,236,118, 2016
52016
Size-dependent metal-insulator transition in Pt-dispersed SiO2 thin film: A candidate for future nonvolatile memory
AB Chen
Ph. D. Thesis, 117, 2011
32011
Size-dependent metal-insulator transition in platinum-dispersed silicon dioxide thin film: A candidate for future non-volatile memory
ABK Chen
University of Pennsylvania, 2011
12011
Asymmetric source and drain contacts for a thin film transistor (tft) structure
C Tan, VH Le, A Garg, SA Pardaev, JEN Timothy, AA Sharma, ...
US Patent App. 17/742,664, 2023
2023
Multi-tier memory structure with graded characteristics
AA Sharma, TW LaJoie, F Mahmoudabadi, SK Madisetti, VH Le, ...
US Patent App. 17/742,628, 2023
2023
Multi-layered or graded gate dielectric in thin film transistor (tft) structures
AA Sharma, AB Chen, M Armstrong, A Sultana, VH Le, TW LaJoie, ...
US Patent App. 17/742,656, 2023
2023
Multi-layered source and drain contacts for a thin film transistor (tft) structure
AA Sharma, TW LaJoie, VH Le, JEN Timothy, KH Baloch, M Armstrong, ...
US Patent App. 17/742,636, 2023
2023
Hybrid etch stop layers
D Taneja, TW LaJoie, AA Sharma, GJ George, T Tiasha, H Liu, Y Liu, ...
US Patent App. 17/708,051, 2023
2023
Resistive random-access memory devices and methods of fabrication
N Strutt, A Chen, P Quintero, O Golonzka
US Patent 11,621,395, 2023
2023
Backend memory with air gaps in upper metal layers
AA Sharma, AB Chen, W Gomes, F Hamzaoglu, TW LaJoie, VH Le, ...
US Patent App. 17/351,301, 2022
2022
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