受强制性开放获取政策约束的文章 - Dr. Tanuj Deswal了解详情
无法在其他位置公开访问的文章：9 篇
Tuning of ripple patterns and wetting dynamics of Si (100) surface using ion beam irradiation
T Kumar, UB Singh, M Kumar, S Ojha, D Kanjilal
Current Applied Physics 14 (3), 312-317, 2014
强制性开放获取政策： Council of Scientific and Industrial Research, India
Role of ion beam induced solid flow in surface patterning of Si (100) using Ar ion beam irradiation
T Kumar, A Kumar, NP Lalla, S Hooda, S Ojha, S Verma, D Kanjilal
Applied Surface Science 283, 417-421, 2013
强制性开放获取政策： Council of Scientific and Industrial Research, India
Nanotechnology based technological development in biofuel production: current status and future prospects
ZUD Sheikh, S Bajar, A Devi, PK Rose, M Suhag, A Yadav, DK Yadav, ...
Enzyme and Microbial Technology, 110304, 2023
强制性开放获取政策： Department of Science & Technology, India
Dynamic scaling of swift heavy ion induced surface restructuring of BaF2 thin film
RK Pandey, M Kumar, T Kumar, AC Yadav, UB Singh, SA Khan, A Tripathi, ...
Materials Letters 143, 309-311, 2015
强制性开放获取政策： Department of Science & Technology, India
Nano-patterning on Si (100) surface under specific ion irradiation environment
RP Yadav, Vandana, J Malik, J Yadav, AK Mittal, T Kumar
MRS Advances 4 (28), 1673-1682, 2019
强制性开放获取政策： Department of Science & Technology, India
Evaluation of the effect of low fluence ion beam pre-damage with sequential high fluence ion beam exposure on the characteristics of the resultant surface
V Panchal, T Kumar, B Satpati, S Ojha, S Kumar
Surfaces and Interfaces 18, 100425, 2020
强制性开放获取政策： Department of Science & Technology, India
Formation of partially embedded Au nanostructures: Ion beam irradiation on thin film
S Chaudhary, VK Srivastava, M Kumar, G Lakshmi, DC Agarwal, S Ojha, ...
Microscopy Research and Technique, 2024
强制性开放获取政策： Department of Science & Technology, India
Self-organized nanopatterning of Si (100) surface using ion beam irradiation
V Vandana, T Kumar, J Jyoti, A Tomar, I Sulania, D Kanjilal, S Kumar
AIP Conference Proceedings 2006 (1), 2018
强制性开放获取政策： Department of Science & Technology, India
SHI induced evolution of surface and wettability of BaF2 thin films
RK Pandey, T Kumar, UB Singh, S Awasthi, AC Pandey
MRS Advances 4 (28-29), 1667-1672, 2019
强制性开放获取政策： Department of Science & Technology, India
可在其他位置公开访问的文章：11 篇
Fractal characterization and wettability of ion treated silicon surfaces
RP Yadav, T Kumar, V Baranwal, V Vandana, M Kumar, PK Priya, ...
Journal of Applied Physics 121 (5), 2017
强制性开放获取政策： Department of Science & Technology, India
Fractal characterization of the silicon surfaces produced by ion beam irradiation of varying fluences
RP Yadav, T Kumar, AK Mittal, S Dwivedi, D Kanjilal
Applied Surface Science 347, 706-712, 2015
强制性开放获取政策： Council of Scientific and Industrial Research, India
Ion beam-generated surface ripples: new insight in the underlying mechanism
T Kumar, A Kumar, DC Agarwal, NP Lalla, D Kanjilal
Nanoscale research letters 8, 1-5, 2013
强制性开放获取政策： Council of Scientific and Industrial Research, India
Role of surface composition in morphological evolution of GaAs nano-dots with low-energy ion irradiation
T Kumar, M Kumar, G Gupta, RK Pandey, S Verma, D Kanjilal
Nanoscale research letters 7, 1-8, 2012
强制性开放获取政策： Council of Scientific and Industrial Research, India
Formation of nanodots on GaAs by 50keV Ar+ ion irradiation
T Kumar, SA Khan, UB Singh, S Verma, D Kanjilal
Applied Surface Science 258 (9), 4148-4151, 2012
强制性开放获取政策： Council of Scientific and Industrial Research, India
An approach to tune the amplitude of surface ripple patterns
T Kumar, A Kumar, D Kanjilal
Applied Physics Letters 103 (13), 2013
强制性开放获取政策： Council of Scientific and Industrial Research, India
Structural manipulation in Ge by swift heavy ions governed by electron–phonon coupling strength
S Hooda, B Satpati, S Ojha, T Kumar, D Kanjilal, D Kabiraj
Materials Research Express 2 (4), 045903, 2015
强制性开放获取政策： Council of Scientific and Industrial Research, India
Fabrication of ordered ripple patterns on GaAs(100) surface using 60 keV Ar+ beam irradiation
T Kumar, M Kumar, S Verma, D Kanjilal
Surface Engineering 29 (7), 543-546, 2013
强制性开放获取政策： Council of Scientific and Industrial Research, India
Regrowth of Ge with different degrees of damage under thermal and athermal treatment
S Hooda, B Satpati, T Kumar, S Ojha, D Kanjilal, D Kabiraj
RSC Advances 6 (6), 4576-4586, 2016
强制性开放获取政策： Council of Scientific and Industrial Research, India
Disorder induced in GaN thin films by 200 MeV silver ions
K Singh, K Gupta, Y Batra, V Rathi, P Kumar, D Kanjilal, T Kumar, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2024
强制性开放获取政策： Department of Science & Technology, India
Investigating ripple pattern formation and damage profiles in Si and Ge induced by 100 keV Ar+ ion beam: a comparative study
I Sulania, H Sondhi, T Kumar, S Ojha, GR Umapathy, A Mishra, A Tripathi, ...
Beilstein Journal of Nanotechnology 15 (1), 367-375, 2024
强制性开放获取政策： Department of Science & Technology, India
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