InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm VM Ustinov, NA Maleev, AE Zhukov, AR Kovsh, AY Egorov, AV Lunev, ... Applied physics letters 74 (19), 2815-2817, 1999 | 513 | 1999 |
InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 µm JA Lott, NN Ledentsov, VM Ustinov, NA Maleev, AE Zhukov, AR Kovsh, ... Electronics Letters 36 (16), 1384-1385, 2000 | 344 | 2000 |
The role of Auger recombination in the temperature-dependent output characteristics of -doped 1.3 μm quantum dot lasers S Fathpour, Z Mi, P Bhattacharya, AR Kovsh, SS Mikhrin, IL Krestnikov, ... Applied Physics Letters 85 (22), 5164-5166, 2004 | 307 | 2004 |
Quantum dot lasers: breakthrough in optoelectronics D Bimberg, M Grundmann, F Heinrichsdorff, NN Ledentsov, VM Ustinov, ... Thin solid films 367 (1-2), 235-249, 2000 | 291 | 2000 |
Tuning quantum dot properties by activated phase separation of an InGa (Al) As alloy grown on InAs stressors MV Maximov, AF Tsatsul’nikov, BV Volovik, DS Sizov, YM Shernyakov, ... Physical Review B 62 (24), 16671, 2000 | 256 | 2000 |
High performance quantum dot lasers on GaAs substrates operating in 1.5 µm range NN Ledentsov, AR Kovsh, AE Zhukov, NA Maleev, SS Mikhrin, ... Electronics Letters 39 (15), 1126-1128, 2003 | 215 | 2003 |
InAs/InGaAs/GaAs quantum dot lasers of 1.3 µm range with high (88%) differential efficiency AR Kovsh, NA Maleev, AE Zhukov, SS Mikhrin, AP Vasil'Ev, ... Electronics Letters 38 (19), 1, 2002 | 194 | 2002 |
High power temperature-insensitive 1.3 µm InAs/InGaAs/GaAs quantum dot lasers SS Mikhrin, AR Kovsh, IL Krestnikov, AV Kozhukhov, DA Livshits, ... Semiconductor science and technology 20 (5), 340, 2005 | 191 | 2005 |
High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser EU Rafailov, MA Cataluna, W Sibbett, ND Il’Inskaya, YM Zadiranov, ... Applied Physics Letters 87 (8), 081107, 2005 | 185 | 2005 |
AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs SA Blokhin, AV Sakharov, AM Nadtochy, AS Pauysov, MV Maximov, ... Semiconductors 43, 514-518, 2009 | 180 | 2009 |
Strain engineering of self-organized InAs quantum dots F Guffarth, R Heitz, A Schliwa, O Stier, NN Ledentsov, AR Kovsh, ... Physical Review B 64 (8), 085305, 2001 | 175 | 2001 |
1.3 µm GaAs-based laser using quantum dots obtained by activated spinodal decomposition YM Shernyakov, DA Bedarev, EY Kondrat'eva, PS Kop'ev, AR Kovsh, ... Electronics Letters 35 (11), 898-900, 1999 | 172 | 1999 |
Hole and electron emission from InAs quantum dots CMA Kapteyn, M Lion, R Heitz, D Bimberg, PN Brunkov, BV Volovik, ... Applied Physics Letters 76 (12), 1573-1575, 2000 | 159 | 2000 |
Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate AE Zhukov, AR Kovsh, VM Ustinov, YM Shernyakov, SS Mikhrin, ... IEEE Photonics Technology Letters 11 (11), 1345-1347, 1999 | 156 | 1999 |
Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates AE Zhukov, AR Kovsh, NA Maleev, SS Mikhrin, VM Ustinov, ... Applied physics letters 75 (13), 1926-1928, 1999 | 156 | 1999 |
InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain AR Kovsh, NA Maleev, AE Zhukov, SS Mikhrin, AP Vasil’ev, ... Journal of Crystal Growth 251 (1-4), 729-736, 2003 | 153 | 2003 |
35GHz mode-locking of 1.3 μm quantum dot lasers M Kuntz, G Fiol, M Lämmlin, D Bimberg, MG Thompson, KT Tan, ... Applied Physics Letters 85 (5), 843-845, 2004 | 149 | 2004 |
Quantum dot laser with 75nm broad spectrum of emission A Kovsh, I Krestnikov, D Livshits, S Mikhrin, J Weimert, A Zhukov Optics letters 32 (7), 793-795, 2007 | 144 | 2007 |
Feedback sensitivity of 1.3 lm InAs/GaAs quantum dot lasers D O’Brien, SP Hegarty, G Huyet, JG McInerney, T Kettler, M Laemmlin, ... RIN 140, 150, 2003 | 136 | 2003 |
Electronic structure of self-assembled InAs quantum dots in GaAs matrix PN Brounkov, A Polimeni, ST Stoddart, M Henini, L Eaves, PC Main, ... Applied physics letters 73 (8), 1092-1094, 1998 | 125 | 1998 |