| Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates DM Fleetwood, SL Kosier, RN Nowlin, RD Schrimpf, RA Reber, M DeLaus, ... IEEE Transactions on Nuclear Science 41 (6), 1871-1883, 1994 | 372 | 1994 |
| Charge separation for bipolar transistors SL Kosier, RD Schrimpf, RN Nowlin, DM Fleetwood, M DeLaus, RL Pease, ... IEEE transactions on nuclear science 40 (6), 1276-1285, 1993 | 236 | 1993 |
| Physically based comparison of hot-carrier-induced and ionizing-radiation-induced degradation in BJTs SL Kosier, A Wei, RD Schrimpf, DM Fleetwood, MD DeLaus, RL Pease, ... IEEE transactions on Electron Devices 42 (3), 436-444, 1995 | 136 | 1995 |
| Bounding the total-dose response of modern bipolar transistors SL Kosier, WE Combs, A Wei, RA Schrimpf, DM Fleetwood, M DeLaus, ... IEEE transactions on nuclear science 41 (6), 1864-1870, 1994 | 98 | 1994 |
| Radiation-induced gain degradation in lateral PNP BJTs with lightly and heavily doped emitters A Wu, RD Schrimpf, HJ Barnaby, DM Fleetwood, RL Pease, SL Kosier IEEE Transactions on Nuclear Science 44 (6), 1914-1921, 1997 | 67 | 1997 |
| Dose‐rate effects on radiation‐induced bipolar junction transistor gain degradation A Wei, SL Kosier, RD Schrimpf, DM Fleetwood, WE Combs Applied physics letters 65 (15), 1918-1920, 1994 | 61 | 1994 |
| Improved latch-up immunity in junction-isolated smart power ICs with unbiased guard ring S Gupta, JC Beckman, SL Kosier IEEE Electron Device Letters 22 (12), 600-602, 2001 | 46 | 2001 |
| Excess collector current due to an oxide-trapped-charge-induced emitter in irradiated NPN BJT's A Wei, SL Kosier, RD Schrimpf, WE Combs, M DeLaus IEEE transactions on electron devices 42 (5), 923-927, 1995 | 43 | 1995 |
| Effects of oxide charge and surface recombination velocity on the excess base current of BJTs Koiser, Schrimpf, Wei, DeLaus, Fleetwood, Combs 1993 Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 211-214, 1993 | 38 | 1993 |
| Guard ring structure for reducing crosstalk and latch-up in integrated circuits S Gupta, SL Kosier, JC Beckman US Patent 6,747,294, 2004 | 31 | 2004 |
| Minimizing gain degradation in lateral PNP bipolar junction transistors using gate control HJ Barnaby, C Cirba, RD Schrimpf, S Kosier, P Fouillat, X Montagner IEEE Transactions on Nuclear Science 46 (6), 1652-1659, 1999 | 27 | 1999 |
| Modeling BJT radiation response with non-uniform energy distributions of interface traps HJ Barnaby, C Cirba, RD Schrimpf, SL Kosier, P Fouillat, X Montagner IEEE Transactions on Nuclear Science 47 (3), 514-518, 2000 | 24 | 2000 |
| The effects of emitter-tied field plates on lateral PNP ionizing radiation response HJ Barnaby, RD Schrimpf, DM Fleetwood, SL Kosier Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat …, 1998 | 19 | 1998 |
| System and method for defining a semiconductor device layout P West, R Harlan, SL Kosier US Patent 6,804,809, 2004 | 18 | 2004 |
| Synergetic effects of radiation stress and hot-carrier stress on the current gain of npn bipolar junction transistors SC Witczak, SL Kosier, RD Schrimpf, KF Galloway IEEE transactions on nuclear science 41 (6), 2412-2419, 1994 | 18 | 1994 |
| Structure and system for simultaneous sensing a magnetic field and mechanical stress S Kosier, G Delmain US Patent 9,851,417, 2017 | 15 | 2017 |
| Vertical hall effect sensor S Kosier, N Hoilien US Patent 9,312,473, 2016 | 15 | 2016 |
| The effects of ionizing radiation on the breakdown voltage of p-channel power MOSFETs SL Kosier, RD Schrimpf, FE Cellier, KF Galloway IEEE Transactions on Nuclear Science 37 (6), 2076-2082, 1990 | 15 | 1990 |
| What's in store for silicon photoreceivers? PB Espinase, SL Kosier IEEE Circuits and Devices Magazine 20 (2), 23-31, 2004 | 14 | 2004 |
| Bipolar junction transistor antifuse KN Kimber, DD Litfin, J Burkhardt, SL Kosier US Patent 7,071,533, 2006 | 11 | 2006 |
Ron SchrimpfProfessor of Electrical Engineering, Vanderbilt University在 vanderbilt.edu 的电子邮件经过验证
