Direct Observation of Self-heating in III-V Gate-all-around Nanowire MOSFETs SH Shin, M Masuduzzaman, MA Wahab, K Maize, JJ Gu, M Si, A Shakouri, ... 2014 IEEE International Electron Devices Meeting (IEDM), 20.3.1, 2014 | 85 | 2014 |
Exploring the capability of multifrequency charge pumping in resolving location and energy levels of traps within dielectric M Masuduzzaman, AE Islam, MA Alam IEEE transactions on electron devices 55 (12), 3421-3431, 2008 | 69 | 2008 |
Intrinsic correlation between PBTI and TDDB degradations in nMOS HK/MG dielectrics J Yang, M Masuduzzaman, K Joshi, S Mukhopadhyay, J Kang, ... 2012 IEEE international reliability physics symposium (IRPS), 5D. 4.1-5D. 4.7, 2012 | 40 | 2012 |
Effective Nanometer Airgap of NEMS Devices Using Negative Capacitance of Ferroelectric Materials M Masuduzzaman, MA Alam Nano Letters 14 (6), 3160-3165, 2014 | 39 | 2014 |
Impact of nanowire variability on performance and reliability of gate-all-around III-V MOSFETs SH Shin, M Masuduzzaman, JJ Gu, MA Wahab, N Conrad, M Si, PD Ye, ... 2013 IEEE International Electron Devices Meeting (IEDM), 7.5. 1-7.5. 4, 2013 | 38 | 2013 |
The origin of broad distribution of breakdown times in polycrystalline thin film dielectrics M Masuduzzaman, S Xie, J Chung, D Varghese, J Rodriguez, S Krishnan, ... Applied Physics Letters 101 (15), 153511-153511-5, 2012 | 24 | 2012 |
Origin and Implications of Hot Carrier Degradation of Gate-all-around nanowire III-V MOSFETs SH Shin, MA Wahab, M Masuduzzaman, M Si, J Gu, PD Ye, MA Alam International Reliability Physics Symposium (IRPS), 4A.3, 2014 | 23 | 2014 |
SILC-based reassignment of trapping and trap generation regimes of positive bias temperature instability JQ Yang, M Masuduzzman, JF Kang, MA Alam 2011 International Reliability Physics Symposium, 3A. 3.1-3A. 3.6, 2011 | 20 | 2011 |
Performance and variability studies of InGaAs gate-all-around nanowire MOSFETs N Conrad, SH Shin, J Gu, M Si, H Wu, M Masuduzzaman, MA Alam, ... IEEE Transactions on Device and Materials Reliability 13 (4), 489-496, 2013 | 18 | 2013 |
Physics and mechanisms of dielectric trap profiling by Multi-frequency Charge Pumping (MFCP) method M Masuduzzaman, AE Islam, MA Alam 2009 IEEE International Reliability Physics Symposium, 13-20, 2009 | 16 | 2009 |
A multi-probe correlated bulk defect characterization scheme for ultra-thin high-к dielectric M Masuduzzaman, AE Islam, MA Alam 2010 IEEE International Reliability Physics Symposium, 1069-1072, 2010 | 15 | 2010 |
Observation and control of hot atom damage in ferroelectric devices M Masuduzzaman, D Varghese, JA Rodriguez, S Krishnan, MA Alam Electron Devices, IEEE Transactions on 61 (10), 3490-3498, 2014 | 14 | 2014 |
Probing bulk defect energy bands using generalized charge pumping method M Masuduzzaman, B Weir, MA Alam Journal of Applied Physics 111 (7), 074501-074501-9, 2012 | 13 | 2012 |
NEMS devices with series ferroelectric negative capacitor MA Alam, M Masuduzzaman, A Jain US Patent 9,755,041, 2017 | 12 | 2017 |
Experimental identification of unique oxide defect regions by characteristic response of charge pumping M Masuduzzaman, A Islam, R Degraeve, M Cho, M Zahid, M Alam 2011 International Reliability Physics Symposium, 3A. 5.1-3A. 5.6, 2011 | 10 | 2011 |
Hot Atom Damage (HAD) Limited TDDB Lifetime of Ferroelectric Memories M Masuduzzaman, MA Alam 2013 IEEE International Electron Devices Meeting (IEDM), 21.4.1, 2013 | 9 | 2013 |
The origin and consequences of push-pull breakdown in series connected dielectrics M Masuduzzaman, D Varghese, H Guo, S Krishnan, MA Alam Applied Physics Letters 99 (26), 2011 | 5 | 2011 |
Characterizing self-heating dynamics using cyclostationary measurements SH Shin, M Masuduzzaman, MA Alam arXiv preprint arXiv:1609.00346, 2016 | 2 | 2016 |
NEMS devices with series ferroelectric negative capacitor MA Alam, M Masuduzzaman, A Jain US Patent 10,312,342, 2019 | 1 | 2019 |
Lifetime of Ferroelectric Devices MA Alam, M Masuduzzaman US Patent App. 14/533,897, 2015 | 1 | 2015 |