| Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111) I Altuntas, MN Kocak, G Yolcu, HF Budak, AE Kasapoğlu, S Horoz, E Gür, ... Materials Science in Semiconductor Processing 127, 105733, 2021 | 20 | 2021 |
| Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy I Simsek, G Yolcu, MN Koçak, K Pürlü, I Altuntas, I Demir Journal of Materials Science: Materials in Electronics 32 (20), 25507-25515, 2021 | 11 | 2021 |
| Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE KM Pürlü, MN Koçak, G Yolcu, İ Perkitel, İ Altuntaş, I Demir Materials Science in Semiconductor Processing 142, 106464, 2022 | 9 | 2022 |
| The influence of TMGa pre-flow time and amount as surfactant on the structural and optical properties of AlN epilayer G Yolcu, I Simsek, R Kekul, I Altuntas, S Horoz, I Demir Micro and Nanostructures, 207301, 2022 | 5 | 2022 |
| High-quality AlN growth: a detailed study on ammonia flow G Yolcu, MN Koçak, DH Ünal, I Altuntas, S Horoz, I Demir Journal of Materials Science: Materials in Electronics 34 (4), 250, 2023 | 2 | 2023 |
| In-situ thermal cleaning of the sapphire substrate and temperature effect on epitaxial AlN MN Koçak, G Yolcu, S Horoz, İ Altuntaş, İ Demir Vacuum 205, 111455, 2022 | 1 | 2022 |
| PALE AlN Grown on Sapphire By MOVPE: Effect Of NH3 Flow Rate ID GAMZE YOLCU, MERVE NUR KOÇAK, DUDU HATICE ÜNAL , ISMAIL ALTUNTAS, SABIT HOROZ TURKISH PHYSICAL SOCIETY 38 TH INTERNATIONAL PHYSICS CONGRESS, 155-156, 2022 | | 2022 |
