| Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric HS Kim, SW Han, WH Jang, CH Cho, KS Seo, J Oh, HY Cha IEEE Electron Device Letters 38 (8), 1090-1093, 2017 | 53 | 2017 |
| High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistors JG Lee, HS Kim, KS Seo, CH Cho, HY Cha Solid-State Electronics 122, 32-36, 2016 | 46 | 2016 |
| Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate HS Kim, MJ Kang, JJ Kim, KS Seo, HY Cha Materials 13 (7), 1538, 2020 | 24 | 2020 |
| Atomic-layer deposition of crystalline BeO on SiC SM Lee, Y Jang, J Jung, JH Yum, ES Larsen, CW Bielawski, W Wang, ... Applied Surface Science 469, 634-640, 2019 | 21 | 2019 |
| Au-free AlGaN/GaN heterostructure field-effect transistor with recessed overhang ohmic contacts using a Ti/Al bilayer JG Lee, HS Kim, DH Kim, SW Han, KS Seo, HY Cha Semiconductor Science and Technology 30 (8), 085005, 2015 | 18 | 2015 |
| Investigation of flat band voltage shift in recessed-gate GaN MOSHFETs with post-metallization-annealing in oxygen atmosphere JG Lee, HS Kim, JY Lee, KS Seo, HY Cha Semiconductor Science and Technology 30 (11), 115008, 2015 | 15 | 2015 |
| Normally-off recessed-gate AlGaN/GaN MOS-HFETs with plasma enhanced atomic layer deposited AlO x N y gate insulator MJ Kang, SK Eom, HS Kim, CH Lee, HY Cha, KS Seo Semiconductor Science and Technology 34 (5), 055018, 2019 | 11 | 2019 |
| Recessed AlGaN/GaN UV Phototransistor WH Jang, HS Kim, MJ Kang, CH Cho, HY Cha JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 19 (2), 184-189, 2019 | 10 | 2019 |
| Time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si MOS-HFETs with PECVD SiO2 gate oxide HS Kim, SK Eom, KS Seo, H Kim, HY Cha Vacuum 155, 428-433, 2018 | 8 | 2018 |
| Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire U Choi, HS Kim, K Lee, D Jung, T Kwak, T Jang, Y Nam, B So, MJ Kang, ... physica status solidi (a) 217 (7), 1900695, 2020 | 7 | 2020 |
| Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT U Choi, K Lee, T Kwak, D Jung, T Jang, Y Nam, B So, HS Kim, HY Cha, ... Japanese Journal of Applied Physics 58 (12), 121003, 2019 | 5 | 2019 |
| Normally‐off AlGaN/GaN‐on‐Si MOS‐HFET with a monolithically integrated single‐stage inverter as a gate driver SW Han, SH Park, HS Kim, MG Jo, HY Cha Electronics Letters 53 (3), 198-199, 2017 | 5 | 2017 |
| SF6 plasma treatment for leakage current reduction of AlGaN/GaN heterojunction field-effect transistors HS Kim, KS Seo, J Oh, HY Cha Results in Physics 10, 248-249, 2018 | 4 | 2018 |
| Effective channel mobility of AlGaN/GaN-on-Si recessed-MOS-HFETs HS Kim, S Heo, HY Cha JSTS: Journal of Semiconductor Technology and Science 16 (6), 867-872, 2016 | 4 | 2016 |
| GaN based negative capacitance heterojunction field-effect transistors with< 30 mV/dec subthreshold slope for steep switching operation SW Han, SK Eom, MJ Kang, HS Kim, KS Seo, HY Cha Results in Physics 16, 102950, 2020 | 3 | 2020 |
| Improved interface characteristics of Mo/SiO2/4H-SiC metal-oxide-semiconductor with post-metallization annealing JG Lee, DH Kim, SK Eom, SH Roh, KS Seo, HS Kim, H Kim, HY Cha, ... Journal of the Korean Physical Society 72, 166-170, 2018 | 3 | 2018 |
| Normally-Off Operation of AlGaN/GaN Heterojunction Field-Effect Transistor with Clamping Diode SW Han, SH Park, HS Kim, J Lim, CH Cho, HY Cha JSTS: Journal of Semiconductor Technology and Science 16 (2), 221-225, 2016 | 3 | 2016 |
| Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors S Yoon, S Lee, HS Kim, HY Cha, HD Lee, J Oh Semiconductor Science and Technology 33 (1), 015007, 2017 | 2 | 2017 |
| Effects of PECVD SiO2 Gate Dielectric Thickness on Recessed AlGaN/GaN MOS-HFETs HS Kim, WH Jang, SK Eom, SW Han, H Kim, KS Seo, CH Cho, HY Cha JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 18 (2), 187-192, 2018 | 1 | 2018 |
| PECVD SiON 절연막을 이용한 4H-SiC MOS 소자 특성 연구 김현섭， 이재길， 임종태， 차호영 전기전자학회논문지 22 (3), 706-711, 2018 | | 2018 |
