| Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics MS Choi, D Qu, D Lee, X Liu, K Watanabe, T Taniguchi, WJ Yoo ACS nano 8 (9), 9332-9340, 2014 | 576 | 2014 |
| Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide HM Li, D Lee, D Qu, X Liu, J Ryu, A Seabaugh, WJ Yoo Nature communications 6 (1), 6564, 2015 | 360 | 2015 |
| P‐type polar transition of chemically doped multilayer MoS2 transistor X Liu#, D Qu#, J Ryu, F Ahmed, Z Yang, D Lee, WJ Yoo Advanced Materials 28 (12), 2345-2351, 2016 | 245 | 2016 |
| Carrier‐type modulation and mobility improvement of thin MoTe2 D Qu#, X Liu#, M Huang, C Lee, F Ahmed, H Kim, RS Ruoff, J Hone, ... Advanced Materials 29 (39), 1606433, 2017 | 190 | 2017 |
| Modulation of quantum tunneling via a vertical two-dimensional black phosphorus and molybdenum disulfide p–n junction X Liu#, D Qu#, HM Li, I Moon, F Ahmed, C Kim, M Lee, Y Choi, JH Cho, ... ACS nano 11 (9), 9143-9150, 2017 | 184 | 2017 |
| Highly oriented monolayer graphene grown on a Cu/Ni (111) alloy foil M Huang, M Biswal, HJ Park, S Jin, D Qu, S Hong, Z Zhu, L Qiu, D Luo, ... Acs Nano 12 (6), 6117-6127, 2018 | 156 | 2018 |
| Patterning metal contacts on monolayer MoS2 with vanishing Schottky barriers using thermal nanolithography X Zheng, A Calò, E Albisetti, X Liu, ASM Alharbi, G Arefe, X Liu, M Spieser, ... Nature Electronics 2 (1), 17-25, 2019 | 146 | 2019 |
| Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors HM Li, DY Lee, MS Choi, D Qu, X Liu, CH Ra, WJ Yoo Scientific reports 4 (1), 4041, 2014 | 139 | 2014 |
| Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects X Liu#, MS Choi#, E Hwang, WJ Yoo, J Sun Advanced Materials, 2108425, 2021 | 133 | 2021 |
| Carrier transport at the metal–MoS 2 interface F Ahmed, MS Choi, X Liu, WJ Yoo Nanoscale 7 (20), 9222-9228, 2015 | 121 | 2015 |
| Monolayer molybdenum disulfide transistors with single-atom-thick gates Y Zhu, Y Li, G Arefe, RA Burke, C Tan, Y Hao, X Liu, X Liu, WJ Yoo, ... Nano letters 18 (6), 3807-3813, 2018 | 113 | 2018 |
| Effects of plasma treatment on surface properties of ultrathin layered MoS2 S Kim, MS Choi, D Qu, CH Ra, X Liu, M Kim, YJ Song, WJ Yoo 2D Materials 3 (3), 035002, 2016 | 76 | 2016 |
| Edge contacts of graphene formed by using a controlled plasma treatment DW Yue, CH Ra, XC Liu, DY Lee, WJ Yoo Nanoscale 7 (2), 825-831, 2015 | 74 | 2015 |
| High electric field carrier transport and power dissipation in multilayer black phosphorus field effect transistor with dielectric engineering F Ahmed, YD Kim, MS Choi, X Liu, D Qu, Z Yang, J Hu, IP Herman, ... Advanced Functional Materials 27 (4), 1604025, 2017 | 61 | 2017 |
| High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure S Hwan Lee, M Sup Choi, J Lee, C Ho Ra, X Liu, E Hwang, J Hee Choi, ... Applied Physics Letters 104 (5), 2014 | 46 | 2014 |
| Tunneling devices and methods of manufacturing the same J Choi, W Yoo, SH Lee, C Min-Sup, XC Liu, J LEE US Patent 9,269,775, 2016 | 39 | 2016 |
| Charge–Ferroelectric Transition in Ultrathin Na0. 5Bi4. 5Ti4O15 Flakes Probed via a Dual‐Gated Full van der Waals Transistor X Liu#, X Zhou#, Y Pan, J Yang, H Xiang, Y Yuan, S Liu, H Luo, D Zhang, ... Advanced Materials 32 (49), 2004813, 2020 | 38 | 2020 |
| Self-Terminated Surface Monolayer Oxidation Induced Robust Degenerate Doping in MoTe2 for Low Contact Resistance X Liu#, D Qu, Y Yuan, J Sun, WJ Yoo ACS Appl. Mater. Interfaces 12 (23), 26586–26592, 2020 | 38 | 2020 |
| Self-screened high performance multi-layer MoS 2 transistor formed by using a bottom graphene electrode D Qu#, X Liu#, F Ahmed, D Lee, WJ Yoo Nanoscale 7 (45), 19273-19281, 2015 | 37 | 2015 |
| Two-dimensional cold electron transport for steep-slope transistors M Liu, HN Jaiswal, S Shahi, S Wei, Y Fu, C Chang, A Chakravarty, X Liu, ... ACS nano 15 (3), 5762-5772, 2021 | 32 | 2021 |
Won Jong YooProfessor of Sungkyunkwan University在 skku.edu 的电子邮件经过验证
