| Effect of band-to-band tunneling on junctionless transistors S Gundapaneni, M Bajaj, RK Pandey, KVRM Murali, S Ganguly, ... IEEE Transactions on Electron Devices 59 (4), 1023-1029, 2012 | 237 | 2012 |
| A Tunnel FET forScaling Below 0.6 V With a CMOS-Comparable Performance R Asra, M Shrivastava, KVRM Murali, RK Pandey, H Gossner, VR Rao IEEE Transactions on Electron Devices 58 (7), 1855-1863, 2011 | 187 | 2011 |
| Carrier Transport in High Mobility InAs Nanowire Junctionless Transistors A Konar, J Mathew, K Nayak, M Bajaj, RK Pandey, S Dhara, K Murali, ... Nano letters 15 (3), pp 1684–1690, 2015 | 63 | 2015 |
| Trap generation in IL and HK layers during BTI/TDDB stress in scaled HKMG N and P MOSFETs S Mukhopadhyay, K Joshi, V Chaudhary, N Goel, S De, RK Pandey, ... 2014 IEEE International Reliability Physics Symposium, GD. 3.1-GD. 3.11, 2014 | 41 | 2014 |
| Selective GeOx-scavenging from interfacial layer on Si1−xGex channel for high mobility Si/Si1−xGex CMOS application CH Lee, H Kim, P Jamison, RG Southwick, S Mochizuki, K Watanabe, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 32 | 2016 |
| A comprehensive DC/AC model for ultra-fast NBTI in deep EOT scaled HKMG p-MOSFETs N Goel, S Mukhopadhyay, N Nanaware, S De, RK Pandey, K Murali, ... 2014 IEEE International Reliability Physics Symposium, 6A. 4.1-6A. 4.12, 2014 | 31 | 2014 |
| Ab initio study of metal grain orientation-dependent work function and its impact on FinFET variability S Agarwal, RK Pandey, JB Johnson, A Dixit, M Bajaj, SS Furkay, ... IEEE transactions on electron devices 60 (9), 2728-2733, 2013 | 30 | 2013 |
| Crystallographic-orientation-dependent gate-induced drain leakage in nanoscale MOSFETs RK Pandey, KVRM Murali, SS Furkay, PJ Oldiges, EJ Nowak IEEE transactions on electron devices 57 (9), 2098-2105, 2010 | 30 | 2010 |
| Role of point defects and HfO2/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal–oxide–semiconductor devices RK Pandey, R Sathiyanarayanan, U Kwon, V Narayanan, KVRM Murali Journal of Applied Physics 114 (3), 2013 | 29 | 2013 |
| Understanding process impact of hole traps and NBTI in HKMG p-MOSFETs using measurements and atomistic simulations S Mahapatra, S De, K Joshi, S Mukhopadhyay, RK Pandey, K Murali IEEE electron device letters 34 (8), 963-965, 2013 | 26 | 2013 |
| Process optimizations for NBTI/PBTI for future replacement metal gate technologies BP Linder, A Dasgupta, T Ando, E Cartier, U Kwon, R Southwick, M Wang, ... 2016 IEEE International Reliability Physics Symposium (IRPS), 4B-1-1-4B-1-5, 2016 | 20 | 2016 |
| Simulation of x-ray absorption near-edge spectra and x-ray fluorescence spectra of optically excited molecules RK Pandey, S Mukamel The Journal of chemical physics 124 (9), 2006 | 20 | 2006 |
| Scaling of Coulomb and exchange-correlation effects with quantum dot size RK Pandey, MK Harbola, VA Singh Physical Review B 67 (7), 075315, 2003 | 19 | 2003 |
| Self-capacitance of a quantum dot: Dependence on the shape of the confining potential V Ranjan, RK Pandey, MK Harbola, VA Singh Physical Review B 65 (4), 045311, 2002 | 16 | 2002 |
| Stable work function for narrow-pitch devices T Ando, M Bajaj, TB Hook, RK Pandey, R Sathiyanarayanan US Patent 9,583,486, 2017 | 15 | 2017 |
| Shallow–deep transitions of neutral and charged donor states in semiconductor quantum dots RK Pandey, MK Harbola, VA Singh Physical Review B—Condensed Matter and Materials Physics 70 (19), 193308, 2004 | 15 | 2004 |
| Helium-like donors in semiconductor quantum dots RK Pandey, MK Harbola, VA Singh Journal of Physics: Condensed Matter 16 (10), 1769, 2004 | 15 | 2004 |
| First-principles investigations of TiGe/Ge interface and recipes to reduce the contact resistance H Dixit, C Niu, M Raymond, V Kamineni, RK Pandey, A Konar, ... IEEE Transactions on Electron Devices 64 (9), 3775-3780, 2017 | 14 | 2017 |
| Semiconductor device with a stoichiometric gradient M Bajaj, GW Burr, KVRM Murali, RK Pandey, R Sathiyanarayanan, ... US Patent 9,589,635, 2017 | 13 | 2017 |
| Gate strain induced work function engineering M Bajaj, KVRM Murali, R Nayak, EJ Nowak, RK Pandey US Patent 9,105,498, 2015 | 13 | 2015 |
Kota MuraliIBM在 in.ibm.com 的电子邮件经过验证
