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Rajan Pandey
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年份
Effect of band-to-band tunneling on junctionless transistors
S Gundapaneni, M Bajaj, RK Pandey, KVRM Murali, S Ganguly, ...
IEEE Transactions on Electron Devices 59 (4), 1023-1029, 2012
2372012
A Tunnel FET forScaling Below 0.6 V With a CMOS-Comparable Performance
R Asra, M Shrivastava, KVRM Murali, RK Pandey, H Gossner, VR Rao
IEEE Transactions on Electron Devices 58 (7), 1855-1863, 2011
1872011
Carrier Transport in High Mobility InAs Nanowire Junctionless Transistors
A Konar, J Mathew, K Nayak, M Bajaj, RK Pandey, S Dhara, K Murali, ...
Nano letters 15 (3), pp 1684–1690, 2015
632015
Trap generation in IL and HK layers during BTI/TDDB stress in scaled HKMG N and P MOSFETs
S Mukhopadhyay, K Joshi, V Chaudhary, N Goel, S De, RK Pandey, ...
2014 IEEE International Reliability Physics Symposium, GD. 3.1-GD. 3.11, 2014
412014
Selective GeOx-scavenging from interfacial layer on Si1−xGex channel for high mobility Si/Si1−xGex CMOS application
CH Lee, H Kim, P Jamison, RG Southwick, S Mochizuki, K Watanabe, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
322016
A comprehensive DC/AC model for ultra-fast NBTI in deep EOT scaled HKMG p-MOSFETs
N Goel, S Mukhopadhyay, N Nanaware, S De, RK Pandey, K Murali, ...
2014 IEEE International Reliability Physics Symposium, 6A. 4.1-6A. 4.12, 2014
312014
Ab initio study of metal grain orientation-dependent work function and its impact on FinFET variability
S Agarwal, RK Pandey, JB Johnson, A Dixit, M Bajaj, SS Furkay, ...
IEEE transactions on electron devices 60 (9), 2728-2733, 2013
302013
Crystallographic-orientation-dependent gate-induced drain leakage in nanoscale MOSFETs
RK Pandey, KVRM Murali, SS Furkay, PJ Oldiges, EJ Nowak
IEEE transactions on electron devices 57 (9), 2098-2105, 2010
302010
Role of point defects and HfO2/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal–oxide–semiconductor devices
RK Pandey, R Sathiyanarayanan, U Kwon, V Narayanan, KVRM Murali
Journal of Applied Physics 114 (3), 2013
292013
Understanding process impact of hole traps and NBTI in HKMG p-MOSFETs using measurements and atomistic simulations
S Mahapatra, S De, K Joshi, S Mukhopadhyay, RK Pandey, K Murali
IEEE electron device letters 34 (8), 963-965, 2013
262013
Process optimizations for NBTI/PBTI for future replacement metal gate technologies
BP Linder, A Dasgupta, T Ando, E Cartier, U Kwon, R Southwick, M Wang, ...
2016 IEEE International Reliability Physics Symposium (IRPS), 4B-1-1-4B-1-5, 2016
202016
Simulation of x-ray absorption near-edge spectra and x-ray fluorescence spectra of optically excited molecules
RK Pandey, S Mukamel
The Journal of chemical physics 124 (9), 2006
202006
Scaling of Coulomb and exchange-correlation effects with quantum dot size
RK Pandey, MK Harbola, VA Singh
Physical Review B 67 (7), 075315, 2003
192003
Self-capacitance of a quantum dot: Dependence on the shape of the confining potential
V Ranjan, RK Pandey, MK Harbola, VA Singh
Physical Review B 65 (4), 045311, 2002
162002
Stable work function for narrow-pitch devices
T Ando, M Bajaj, TB Hook, RK Pandey, R Sathiyanarayanan
US Patent 9,583,486, 2017
152017
Shallow–deep transitions of neutral and charged donor states in semiconductor quantum dots
RK Pandey, MK Harbola, VA Singh
Physical Review B—Condensed Matter and Materials Physics 70 (19), 193308, 2004
152004
Helium-like donors in semiconductor quantum dots
RK Pandey, MK Harbola, VA Singh
Journal of Physics: Condensed Matter 16 (10), 1769, 2004
152004
First-principles investigations of TiGe/Ge interface and recipes to reduce the contact resistance
H Dixit, C Niu, M Raymond, V Kamineni, RK Pandey, A Konar, ...
IEEE Transactions on Electron Devices 64 (9), 3775-3780, 2017
142017
Semiconductor device with a stoichiometric gradient
M Bajaj, GW Burr, KVRM Murali, RK Pandey, R Sathiyanarayanan, ...
US Patent 9,589,635, 2017
132017
Gate strain induced work function engineering
M Bajaj, KVRM Murali, R Nayak, EJ Nowak, RK Pandey
US Patent 9,105,498, 2015
132015
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