| BSIM4 gate leakage model including source-drain partition KM Cao, WC Lee, W Liu, X Jin, P Su, SKH Fung, JX An, B Yu, C Hu International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000 | 278 | 2000 |
| Analysis of single-trap-induced random telegraph noise and its interaction with work function variation for tunnel FET ML Fan, VPH Hu, YN Chen, P Su, CT Chuang IEEE transactions on electron devices 60 (6), 2038-2044, 2013 | 67 | 2013 |
| Analysis of single-trap-induced random telegraph noise on FinFET devices, 6T SRAM cell, and logic circuits ML Fan, VPH Hu, YN Chen, P Su, CT Chuang IEEE Transactions on Electron Devices 59 (8), 2227-2234, 2012 | 64 | 2012 |
| On the body-source built-in potential lowering of SOI MOSFETs P Su, SKH Fung, PW Wyatt, H Wan, AM Niknejad, M Chan, C Hu IEEE Electron Device Letters 24 (2), 90-92, 2003 | 64 | 2003 |
| Variability analysis for ferroelectric FET nonvolatile memories considering random ferroelectric-dielectric phase distribution YS Liu, P Su IEEE Electron Device Letters 41 (3), 369-372, 2020 | 63 | 2020 |
| Investigation and comparison of work function variation for FinFET and UTB SOI devices using a Voronoi approach SH Chou, ML Fan, P Su IEEE transactions on electron devices 60 (4), 1485-1489, 2013 | 60 | 2013 |
| Evaluation of stability, performance of ultra-low voltage MOSFET, TFET, and mixed TFET-MOSFET SRAM cell with write-assist circuits YN Chen, ML Fan, VPH Hu, P Su, CT Chuang IEEE Journal on Emerging and Selected Topics in Circuits and Systems 4 (4 …, 2014 | 58 | 2014 |
| Influence of surface excitations on electrons elastically backscattered from copper and silver surfaces YF Chen, P Su, CM Kwei, CJ Tung Physical Review B 50 (23), 17547, 1994 | 57 | 1994 |
| Comparison of 4T and 6T FinFET SRAM cells for subthreshold operation considering variability—A model-based approach ML Fan, YS Wu, VPH Hu, CY Hsieh, P Su, CT Chuang IEEE transactions on electron devices 58 (3), 609-616, 2011 | 52 | 2011 |
| Investigation of cell stability and write ability of FinFET subthreshold SRAM using analytical SNM model ML Fan, YS Wu, VPH Hu, P Su, CT Chuang IEEE Transactions on Electron Devices 57 (6), 1375-1381, 2010 | 52 | 2010 |
| Short-channel effects in 2D negative-capacitance field-effect transistors WX You, CP Tsai, P Su IEEE transactions on Electron Devices 65 (4), 1604-1610, 2018 | 50 | 2018 |
| Independently-controlled-gate FinFET Schmitt trigger sub-threshold SRAMs CY Hsieh, ML Fan, VPH Hu, P Su, CT Chuang IEEE Transactions on very large scale integration (VLSI) systems 20 (7 …, 2011 | 50 | 2011 |
| Modeling the floating-body effects of fully depleted, partially depleted, and body-grounded SOI MOSFETs M Chan, P Su, H Wan, CH Lin, SKH Fung, AM Niknejad, C Hu, PK Ko Solid-State Electronics 48 (6), 969-978, 2004 | 49 | 2004 |
| A thermal activation view of low voltage impact ionization in MOSFETs P Su, K Goto, T Sugii, C Hu IEEE Electron Device Letters 23 (9), 550-552, 2002 | 47 | 2002 |
| Design space exploration considering back-gate biasing effects for 2D negative-capacitance field-effect transistors WX You, P Su IEEE Transactions on Electron Devices 64 (8), 3476-3481, 2017 | 46 | 2017 |
| Analytical quantum-confinement model for short-channel gate-all-around MOSFETs under subthreshold region YS Wu, P Su IEEE Transactions on Electron Devices 56 (11), 2720-2725, 2009 | 46 | 2009 |
| BSIMPD: A partial-depletion SOI MOSFET model for deep-submicron CMOS designs P Su, SKH Fung, S Tang, F Assaderaghi, C Hu Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No …, 2000 | 46 | 2000 |
| Design and analysis of robust tunneling FET SRAM YN Chen, ML Fan, VPH Hu, P Su, CT Chuang IEEE transactions on electron devices 60 (3), 1092-1098, 2013 | 44 | 2013 |
| FinFET SRAM cell optimization considering temporal variability due to NBTI/PBTI, surface orientation and various gate dielectrics VPH Hu, ML Fan, CY Hsieh, P Su, CT Chuang IEEE Transactions on Electron Devices 58 (3), 805-811, 2011 | 41 | 2011 |
| Sensitivity of gate-all-around nanowire MOSFETs to process variations—A comparison with multigate MOSFETs YS Wu, P Su IEEE transactions on electron devices 55 (11), 3042-3047, 2008 | 41 | 2008 |
