| Threshold Voltage Instability of Enhancement-Mode GaN Buried p-Channel MOSFETs Z Zheng, L Zhang, W Song, T Chen, S Feng, YH Ng, J Sun, H Xu, S Yang, ... IEEE Electron Device Letters 42 (11), 1584-1587, 2021 | 21 | 2021 |
| SiN/in-situ-GaON staggered gate stack on p-GaN for enhanced stability in buried-channel GaN p-FETs L Zhang, Z Zheng, Y Cheng, YH Ng, S Feng, W Song, T Chen, KJ Chen 2021 IEEE International Electron Devices Meeting (IEDM), 5.3. 1-5.3. 4, 2021 | 20 | 2021 |
| Observation and characterization of impact ionization-induced OFF-state breakdown in Schottky-type p-GaN gate HEMTs Y Cheng, Y Wang, S Feng, Z Zheng, T Chen, G Lyu, YH Ng, KJ Chen Applied Physics Letters 118 (16), 2021 | 14 | 2021 |
| Normally-OFF p-GaN gate double-channel HEMT with suppressed hot-electron-induced dynamic on-resistance degradation H Liao, Z Zheng, T Chen, L Zhang, Y Cheng, S Feng, YH Ng, L Chen, ... IEEE Electron Device Letters 43 (9), 1424-1427, 2022 | 12 | 2022 |
| Strain Release in GaN Epitaxy on 4° Off‐Axis 4H‐SiC S Feng, Z Zheng, Y Cheng, YH Ng, W Song, T Chen, L Zhang, K Liu, ... Advanced Materials 34 (23), 2201169, 2022 | 11 | 2022 |
| A GaN power integration platform based on engineered bulk Si substrate with eliminated crosstalk between high-side and low-side HEMTs G Lyu, J Wei, W Song, Z Zheng, L Zhang, J Zhang, Y Cheng, S Feng, ... 2021 IEEE International Electron Devices Meeting (IEDM), 5.2. 1-5.2. 4, 2021 | 11 | 2021 |
| RF Enhancement-Mode p-GaN Gate HEMT on 200 mm-Si Substrates Y Cheng, YH Ng, Z Zheng, KJ Chen IEEE Electron Device Letters 44 (1), 29-31, 2022 | 10 | 2022 |
| Substrate and trench design for GaN-on-EBUS power ic platform considering output capacitance and isolation between high-side and low-side transistors G Lyu, J Wei, YH Ng, Y Cheng, S Feng, KJ Chen 2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022 | 6 | 2022 |
| Distribution and transport of holes in the p-GaN/AlGaN/GaN heterostructure YH Ng, Z Zheng, L Zhang, R Liu, T Chen, S Feng, Q Shao, KJ Chen Applied Physics Letters 123 (14), 2023 | 5 | 2023 |
| p-GaN gate power HEMT heterostructure as a versatile platform for extremely wide-temperature-range (X-WTR) applications YH Ng, Z Zheng, L Zhang, R Liu, T Chen, S Feng, Q Shao, KJ Chen Applied Physics Letters 124 (4), 2024 | 3 | 2024 |
| Impact of Inadequate Mg Activation on Dynamic Threshold Voltage of Schottky-type -GaN Gate HEMTs J Sun, Z Zheng, L Zhang, YH Ng, J Shu, T Chen, KJ Chen 2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023 | 3 | 2023 |
| HyFET—A GaN/SiC Hybrid Field-Effect Transistor S Feng, Z Zheng, Y Wang, G Lyu, K Liu, Y Cheng, J Chen, T Chen, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 2 | 2023 |
| Gate Characteristics of Enhancement-Mode Fully Depleted p-GaN Gate HEMT J Sun, S Mouhoubi, M Silvestri, Z Zheng, YH Ng, J Shu, KJ Chen, ... IEEE Electron Device Letters, 2023 | 2 | 2023 |
| Linearity Characterization of Enhancement-Mode p-GaN Gate Radio-Frequency HEMT Y Cheng, Z Zheng, YH Ng, KJ Chen IEEE Electron Device Letters, 2023 | 2 | 2023 |
| Impact Ionization Induced Breakdown and Related HTRB Behaviors in 100-V p-GaN Gate HEMTs Y Cheng, Y Wang, S Feng, Z Zheng, T Chen, G Lyu, YH Ng, KJ Chen 2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021 | 2 | 2021 |
| GaN-based Charge Trapping Memory with an AlN Interfacial Layer for Multi-State Operation T Chen, Z Zheng, S Feng, L Zhang, YH Ng, KJ Chen IEEE Electron Device Letters, 2024 | | 2024 |
