| Spontaneous current constriction in threshold switching devices JM Goodwill, G Ramer, D Li, BD Hoskins, G Pavlidis, JJ McClelland, ... Nature communications 10 (1), 1628, 2019 | 67 | 2019 |
| Electro-Thermal Model of Threshold Switching in TaOx-Based Devices JM Goodwill, AA Sharma, D Li, JA Bain, M Skowronski ACS applied materials & interfaces 9 (13), 11704-11710, 2017 | 50 | 2017 |
| Stable Metallic Enrichment in Conductive Filaments in TaOx‐Based Resistive Switches Arising from Competing Diffusive Fluxes Y Ma, JM Goodwill, D Li, DA Cullen, JD Poplawsky, KL More, JA Bain, ... Advanced Electronic Materials 5 (7), 1800954, 2019 | 39 | 2019 |
| Switching dynamics of TaOx-based threshold switching devices JM Goodwill, DK Gala, JA Bain, M Skowronski Journal of Applied Physics 123 (11), 2018 | 29 | 2018 |
| Scaling behavior of oxide-based electrothermal threshold switching devices D Li, JM Goodwill, JA Bain, M Skowronski Nanoscale 9 (37), 14139-14148, 2017 | 28 | 2017 |
| Temperature overshoot as the cause of physical changes in resistive switching devices during electro-formation J Meng, B Zhao, Q Xu, JM Goodwill, JA Bain, M Skowronski Journal of Applied Physics 127 (23), 2020 | 18 | 2020 |
| Evolution of the conductive filament with cycling in TaOx-based resistive switching devices Y Ma, PP Yeoh, L Shen, JM Goodwill, JA Bain, M Skowronski Journal of Applied Physics 128 (19), 2020 | 16 | 2020 |
| Exchange of Ions across the TiN/TaOx Interface during Electroformation of TaOx-Based Resistive Switching Devices Y Ma, DA Cullen, JM Goodwill, Q Xu, KL More, M Skowronski ACS applied materials & interfaces 12 (24), 27378-27385, 2020 | 14 | 2020 |
| ON-state evolution in lateral and vertical VO2 threshold switching devices D Li, AA Sharma, N Shukla, H Paik, JM Goodwill, S Datta, DG Schlom, ... Nanotechnology 28 (40), 405201, 2017 | 14 | 2017 |
| Low temperature electroformation of TaOx-based resistive switching devices DK Gala, AA Sharma, D Li, JM Goodwill, JA Bain, M Skowronski Apl Materials 4 (1), 2016 | 13 | 2016 |
| Implementation of a binary neural network on a passive array of magnetic tunnel junctions JM Goodwill, N Prasad, BD Hoskins, MW Daniels, A Madhavan, L Wan, ... Physical Review Applied 18 (1), 014039, 2022 | 11 | 2022 |
| Intrinsic current overshoot during thermal-runaway threshold switching events in TaOx devices JM Goodwill, M Skowronski Journal of Applied Physics 126 (3), 2019 | 11 | 2019 |
| Electrical and Thermal Dynamics of Self-Oscillations in TaOx-Based Threshold Switching Devices Y Yu, B Zhao, JM Goodwill, Y Ma, JA Bain, M Skowronski ACS Applied Electronic Materials 2 (3), 683-691, 2020 | 10 | 2020 |
| Quantification of Compositional Runaway during Electroformation in TaOx Resistive Switching Devices Y Ma, J Goodwill, M Skowronski 2019 IEEE 11th International Memory Workshop (IMW), 1-4, 2019 | 8 | 2019 |
| A system for validating resistive neural network prototypes B Hoskins, W Ma, M Fream, O Yousuf, M Daniels, J Goodwill, ... International Conference on Neuromorphic Systems 2021, 1-5, 2021 | 7 | 2021 |
| Temperature Distribution in TaOx Resistive Switching Devices Assessed In Operando by Scanning Thermal Microscopy J Meng, JM Goodwill, E Strelcov, K Bao, JJ McClelland, M Skowronski ACS Applied Electronic Materials 5 (4), 2414-2421, 2023 | 4 | 2023 |
| Implementation of a binary neural network on a passive array of magnetic tunnel junctions (Conference Presentation) JM Goodwill, N Prasad, BD Hoskins, MW Daniels, A Madhavan, L Wan, ... Spintronics XV, PC122050L, 2022 | | 2022 |
| Understanding Threshold Switching in TaOx-based Selection Devices J Goodwill Carnegie Mellon University, 2019 | | 2019 |
