All The Catalytic Active Sites of MoS2 for Hydrogen Evolution G Li, D Zhang, Q Qiao, Y Yu, D Peterson, A Zafar, R Kumar, S Curtarolo, ... J. Am. Chem. Soc. 138 (51), 16632–16638, 2016 | 757 | 2016 |
Product selectivity in plasmonic photocatalysis for carbon dioxide hydrogenation X Zhang, X Li, D Zhang, NQ Su, W Yang, HO Everitt, J Liu Nature Communications 8, 14542, 2017 | 434 | 2017 |
Plasmon-Enhanced Catalysis: Distinguishing Thermal and Nonthermal Effects X Zhang, X Li, ME Reish, D Zhang, NQ Su, Y Gutiérrez, F Moreno, ... Nano Letters 18 (3), 1714-1723, 2018 | 292 | 2018 |
Activating MoS2 for pH-Universal Hydrogen Evolution Catalysis G Li, D Zhang, Y Yu, S Huang, W Yang, L Cao J. Am. Chem. Soc. 139 (45), 16194–16200, 2017 | 179 | 2017 |
Engineering Substrate Interaction To Improve Hydrogen Evolution Catalysis of Monolayer MoS2 Films beyond Pt G Li, Z Chen, Y Li, D Zhang, W Yang, Y Liu, L Cao ACS Nano 14 (2), 1707-1714, 2020 | 108 | 2020 |
Analytic gradients, geometry optimization and excited state potential energy surfaces from the particle-particle random phase approximation D Zhang, D Peng, P Zhang, W Yang Physical Chemistry Chemical Physics 17 (2), 1025-1038, 2015 | 33 | 2015 |
Conical intersections from particle–particle random phase and Tamm–Dancoff approximations Y Yang, L Shen, D Zhang, W Yang The journal of physical chemistry letters 7 (13), 2407-2411, 2016 | 30 | 2016 |
Dynamical second-order Bethe-Salpeter equation kernel: A method for electronic excitation beyond the adiabatic approximation D Zhang, SN Steinmann, W Yang The Journal of chemical physics 139 (15), 2013 | 29 | 2013 |
Generalized Optimized Effective Potential for Orbital Functionals and Self-Consistent Calculation of Random Phase Approximations Y Jin, D Zhang, Z Chen, NQ Su, W Yang J. Phys. Chem. Lett. 8, 4746–4751, 2017 | 28 | 2017 |
Accurate Quasiparticle Spectra from the T-Matrix Self-Energy and the Particle–Particle Random Phase Approximation D Zhang, NQ Su, W Yang J. Phys. Chem. Lett. 8, 3223–3227, 2017 | 26 | 2017 |
Multireference Density Functional Theory with Generalized Auxiliary Systems for Ground and Excited States Z Chen, D Zhang, Y Jin, Y Yang, NQ Su, W Yang J. Phys. Chem. Lett. 8, 4479–4485, 2017 | 23 | 2017 |
Accurate and efficient calculation of excitation energies with the active-space particle-particle random phase approximation D Zhang, W Yang The Journal of Chemical Physics 145 (14), 2016 | 16 | 2016 |
Mechanism of Rate Acceleration of Radical C-C Bond Formation Reaction by a Radical SAM GTP 3′,8-Cyclase H Pang, EA Lilla, P Zhang, D Zhang, TP Shields, LG Scott, W Yang, ... J. Am. Chem. Soc. 142 (20), 9314-9326, 2020 | 15 | 2020 |
Charge transfer excitations from particle-particle random phase approximation—Opportunities and challenges arising from two-electron deficient systems Y Yang, A Dominguez, D Zhang, V Lutsker, TA Niehaus, T Frauenheim, ... The Journal of Chemical Physics 146, 124104, 2017 | 15 | 2017 |
Single, Double Electronic Excitations and Exciton Effective Conjugation Lengths in π-Conjugated Systems C Sutton, Y Yang, D Zhang, W Yang J. Phys. Chem. Lett. 9, 4029–4036, 2018 | 8 | 2018 |
Cryogenic nanoscale etching of silicon nitride selectively to silicon by alternating SiF4/O2 and Ar plasmas G Antoun, T Tillocher, A Girard, P Lefaucheux, J Faguet, H Kim, D Zhang, ... Journal of Vacuum Science & Technology A 40 (5), 052601, 2022 | 6 | 2022 |
Excitation energies from particle-particle random phase approximation with accurate optimized effective potentials Y Jin, Y Yang, D Zhang, D Peng, W Yang The Journal of Chemical Physics 147, 134105, 2017 | 5 | 2017 |
Independent control of etching and passivation gas components for highly selective silicon oxide/silicon nitride etching D Zhang, YH Tsai, M Wang US Patent App. 16/828,308, 2020 | 2 | 2020 |
High-aspect-ratio amorphous carbon mask etch profile control through plasma and surface chemistry optimization D Zhang, S Chang, P Luan, A Kaphle, T Hisamatsu, J Shearer, M Park, ... Advanced Etch Technology and Process Integration for Nanopatterning XII …, 2023 | 1 | 2023 |
Atomic level control of pattern fidelity during SAC etch M Wang, D Zhang, S Morikita, Y Shi, H Kim, J Lucas, K Taniguchi, P Biolsi Advanced Etch Technology and Process Integration for Nanopatterning X 11615 …, 2021 | 1 | 2021 |