| Proton-induced dehydrogenation of defects in AlGaN/GaN HEMTs J Chen, YS Puzyrev, CX Zhang, EX Zhang, MW McCurdy, DM Fleetwood, ... IEEE Transactions on Nuclear Science 60 (6), 4080-4086, 2013 | 119 | 2013 |
| Effects of applied bias and high field stress on the radiation response of GaN/AlGaN HEMTs J Chen, YS Puzyrev, R Jiang, EX Zhang, MW McCurdy, DM Fleetwood, ... IEEE Transactions on Nuclear Science 62 (6), 2423-2430, 2015 | 112 | 2015 |
| A comparison of the SEU response of planar and FinFET D flip-flops at advanced technology nodes P Nsengiyumva, DR Ball, JS Kauppila, N Tam, M McCurdy, WT Holman, ... IEEE Transactions on Nuclear Science 63 (1), 266-272, 2016 | 74 | 2016 |
| Effects of proton-induced displacement damage on gallium nitride HEMTs in RF power amplifier applications NE Ives, J Chen, AF Witulski, RD Schrimpf, DM Fleetwood, RW Bruce, ... IEEE Transactions on Nuclear Science 62 (6), 2417-2422, 2015 | 69 | 2015 |
| Worst-case bias for proton and 10-keV X-ray irradiation of AlGaN/GaN HEMTs R Jiang, EX Zhang, MW McCurdy, J Chen, X Shen, P Wang, ... IEEE Transactions on Nuclear Science 64 (1), 218-225, 2016 | 55 | 2016 |
| Temperature dependence of digital single-event transients in bulk and fully-depleted SOI technologies MJ Gadlage, JR Ahlbin, V Ramachandran, P Gouker, CA Dinkins, ... IEEE Transactions on Nuclear Science 56 (6), 3115-3121, 2009 | 51 | 2009 |
| Bias dependence of single-event upsets in 16 nm FinFET D-flip-flops B Narasimham, S Hatami, A Anvar, DM Harris, A Lin, JK Wang, ... IEEE Transactions on Nuclear Science 62 (6), 2578-2584, 2015 | 49 | 2015 |
| Dose-rate dependence of the total-ionizing-dose response of GaN-based HEMTs R Jiang, EX Zhang, MW McCurdy, P Wang, H Gong, D Yan, RD Schrimpf, ... IEEE Transactions on Nuclear Science 66 (1), 170-176, 2019 | 35 | 2019 |
| RF performance of proton-irradiated AlGaN/GaN HEMTs J Chen, EX Zhang, CX Zhang, MW McCurdy, DM Fleetwood, RD Schrimpf, ... IEEE Transactions on Nuclear Science 61 (6), 2959-2964, 2014 | 35 | 2014 |
| Vanderbilt Pelletron-Low energy protons and other ions for radiation effects on electronics MW McCurdy, MH Mendenhall, RA Reed, BR Rogers, RA Weller, ... 2015 IEEE Radiation Effects Data Workshop (REDW), 1-6, 2015 | 25 | 2015 |
| Heavy-Ion and Laser Induced Charge Collection in SiGe Channel EX Zhang, IK Samsel, NC Hooten, WG Bennett, ED Funkhouser, K Ni, ... IEEE Transactions on Nuclear Science 61 (6), 3187-3192, 2014 | 22 | 2014 |
| Low energy proton irradiation effects on commercial enhancement mode GaN HEMTs X Wan, OK Baker, MW McCurdy, EX Zhang, M Zafrani, SP Wainwright, ... IEEE Transactions on Nuclear Science 64 (1), 253-257, 2016 | 20 | 2016 |
| X-ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices PF Wang, EX Zhang, KH Chuang, W Liao, H Gong, P Wang, CN Arutt, ... IEEE Transactions on Nuclear Science 65 (8), 1519-1524, 2018 | 18 | 2018 |
| State-of-the-Art Flash Chips for Dosimetry Applications P Kumari, L Davies, NP Bhat, EX Zhang, MW McCurdy, DM Fleetwood, ... 2018 IEEE Radiation Effects Data Workshop (REDW), 1-4, 2018 | 16 | 2018 |
| Proton-induced displacement damage and total-ionizing-dose effects on silicon-based MEMS resonators H Gong, W Liao, EX Zhang, AL Sternberg, MW McCurdy, JL Davidson, ... IEEE Transactions on Nuclear Science 65 (1), 34-38, 2017 | 16 | 2017 |
| Impact of deep trench isolation on advanced SiGe HBT reliability in radiation environments SD Phillips, AK Sutton, A Appaswamy, M Bellini, JD Cressler, A Grillo, ... 2009 IEEE International Reliability Physics Symposium, 157-164, 2009 | 15 | 2009 |
| Total-ionizing-dose effects in piezoresistive micromachined cantilevers H Gong, W Liao, EX Zhang, AL Sternberg, MW McCurdy, JL Davidson, ... IEEE Transactions on Nuclear Science 64 (1), 263-268, 2016 | 14 | 2016 |
| Total Ionizing Dose Effects and Proton-Induced Displacement Damage on MoS2-Interlayer-MoS2 Tunneling Junctions P Wang, CJ Perini, A O’Hara, H Gong, P Wang, EX Zhang, MW Mccurdy, ... IEEE Transactions on Nuclear Science 66 (1), 420-427, 2019 | 10 | 2019 |
| Impact of X-Ray Radiation on GaN/AlN MEMS Structure and GaN HEMT Gauge Factor Response JT Lin, P Wang, P Shuvra, S McNamara, M McCurdy, J Davidson, ... 2020 IEEE 33rd International Conference on Micro Electro Mechanical Systems …, 2020 | 6 | 2020 |
| Total-Ionizing-Dose Effects on Al/SiO2Bimorph Electrothermal Microscanners W Liao, EX Zhang, ML Alles, AL Sternberg, CN Arutt, D Wang, SE Zhao, ... IEEE Transactions on Nuclear Science 65 (8), 2260-2267, 2018 | 2 | 2018 |
