Improved heat dissipation in gallium nitride light-emitting diodes with embedded graphene oxide pattern N Han, T Viet Cuong, M Han, B Deul Ryu, S Chandramohan, J Bae Park, ... Nature communications 4 (1), 1452, 2013 | 248 | 2013 |
Work-function-tuned multilayer graphene as current spreading electrode in blue light-emitting diodes S Chandramohan, J Hye Kang, YS Katharria, N Han, Y Seon Beak, ... Applied Physics Letters 100 (2), 2012 | 64 | 2012 |
Comparison of various surface textured layer in InGaN LEDs for high light extraction efficiency JH Kang, JH Ryu, HK Kim, HY Kim, N Han, YJ Park, P Uthirakumar, ... Optics express 19 (4), 3637-3646, 2011 | 49 | 2011 |
DFB laser diodes based on GaN using 10th order laterally coupled surface gratings JH Kang, H Wenzel, V Hoffmann, E Freier, L Sulmoni, RS Unger, ... IEEE Photonics Technology Letters 30 (3), 231-234, 2017 | 43 | 2017 |
Chemically modified multilayer graphene with metal interlayer as an efficient current spreading electrode for InGaN/GaN blue light-emitting diodes S Chandramohan, JH Kang, YS Katharria, N Han, YS Beak, KB Ko, ... Journal of Physics D: Applied Physics 45 (14), 145101, 2012 | 40 | 2012 |
Impact of Interlayer Processing Conditions on the Performance of GaN Light-Emitting Diode with Specific NiOx/Graphene Electrode S Chandramohan, JH Kang, BD Ryu, JH Yang, S Kim, H Kim, JB Park, ... ACS applied materials & interfaces 5 (3), 958-964, 2013 | 39 | 2013 |
Impact of two-floor air prism arrays as an embedded reflector for enhancing the output power of InGaN/GaN light emitting diodes HG Kim, HK Kim, HY Kim, JH Ryu, JH Kang, N Han, P Uthirakumar, ... Applied Physics Letters 95 (22), 2009 | 26 | 2009 |
High performance of InGaN light-emitting diodes by air-gap/GaN distributed Bragg reflectors JH Ryu, HY Kim, HK Kim, YS Katharria, N Han, JH Kang, YJ Park, M Han, ... Optics Express 20 (9), 9999-10003, 2012 | 25 | 2012 |
Nanoscale ITO/ZnO layer-texturing for high-efficiency InGaN/GaN light emitting diodes P Uthirakumar, JH Kang, BD Ryu, HG Kim, HK Kim, CH Hong Materials Science and Engineering: B 166 (3), 230-234, 2010 | 25 | 2010 |
Synthesis and improved luminescence properties of OLED/ZnO hybrid materials U Periyayya, JH Kang, JH Ryu, CH Hong Vacuum 86 (3), 254-260, 2011 | 24 | 2011 |
Improvement of light output power in InGaN/GaN light-emitting diodes with a nanotextured GaN surface using indium tin oxide nanospheres JH Kang, HG Kim, HK Kim, HY Kim, JH Ryu, P Uthirakumar, N Han, ... Japanese Journal of Applied Physics 48 (10R), 102104, 2009 | 21 | 2009 |
Continuous-wave operation of DFB laser diodes based on GaN using 10th-order laterally coupled surface gratings JH Kang, H Wenzel, E Freier, V Hoffmann, O Brox, J Fricke, L Sulmoni, ... Optics letters 45 (4), 935-938, 2020 | 19 | 2020 |
The different types of ZnO materials on the performance of dye-sensitized solar cells P Uthirakumar, JH Kang, S Senthilarasu, CH Hong Physica E: Low-dimensional Systems and Nanostructures 43 (9), 1746-1750, 2011 | 19 | 2011 |
Stress-relaxed growth of n-GaN epilayers JH Ryu, YS Katharria, HY Kim, HK Kim, KB Ko, N Han, JH Kang, YJ Park, ... Applied Physics Letters 100 (18), 2012 | 18 | 2012 |
Enhanced light output power of GaN-based light-emitting diodes by nano-rough indium tin oxide film using ZnO nanoparticles B Deul Ryu, P Uthirakumar, J Hye Kang, B Jun Kwon, S Chandramohan, ... Journal of Applied Physics 109 (9), 2011 | 18 | 2011 |
Enhancement of light output power in InGaN/GaN LEDs with nanoroughed hemispherical indium tin oxide transparent ohmic contacts JH Kang, HG Kim, JH Ryu, HK Kim, HY Kim, J Joo, MS Lee, YJ Park, ... Electrochemical and Solid-State Letters 13 (2), D1, 2009 | 18 | 2009 |
Optically pumped DFB lasers based on GaN using 10th-order laterally coupled surface gratings JH Kang, M Martens, H Wenzel, V Hoffmann, W John, S Einfeldt, ... IEEE Photonics Technology Letters 29 (1), 138-141, 2016 | 17 | 2016 |
Stimulated N-doping of reduced graphene oxide on GaN under excimer laser reduction process BD Ryu, N Han, M Han, S Chandramohan, YJ Park, KB Ko, JB Park, ... Materials Letters 116, 412-415, 2014 | 16 | 2014 |
Enhancement of light output power in GaN-based light-emitting diodes using indium tin oxide films with nanoporous structures JH Kang, JH Ryu, HK Kim, HY Kim, N Han, MS Lee, YJ Park, ... Thin Solid Films 520 (1), 437-441, 2011 | 16 | 2011 |
Effect of embedded silica nanospheres on improving the performance of InGaN/GaN light-emitting diodes YJ Park, HY Kim, JH Ryu, HK Kim, JH Kang, N Han, M Han, H Jeong, ... Optics Express 19 (3), 2029-2036, 2011 | 15 | 2011 |