Carbon nanotube composites for thermal management MJ Biercuk, MC Llaguno, M Radosavljevic, JK Hyun, AT Johnson, ... Applied Physics Letters 80 (15), 2767-2769, 2002 | 2440 | 2002 |
Group III-N transistors for system on chip (SOC) architecture integrating power management and radio frequency circuits HW Then, R Chau, V Rao, N Mukherjee, M Radosavljevic, R Pillarisetty, ... US Patent 10,290,614, 2019 | 1420* | 2019 |
Biological physics P Nelson WH Freeman, 2004 | 1113 | 2004 |
Benchmarking nanotechnology for high-performance and low-power logic transistor applications R Chau, S Datta, M Doczy, B Doyle, B Jin, J Kavalieros, A Majumdar, ... IEEE Transactions on Nanotechnology 4 (2), 153-158, 2005 | 875 | 2005 |
Nonvolatile molecular memory elements based on ambipolar nanotube field effect transistors M Radosavljević, M Freitag, KV Thadani, AT Johnson Nano Letters 2 (7), 761-764, 2002 | 497 | 2002 |
Fabrication, characterization, and physics of III–V heterojunction tunneling field effect transistors (H-TFET) for steep sub-threshold swing G Dewey, B Chu-Kung, J Boardman, JM Fastenau, J Kavalieros, R Kotlyar, ... 2011 International electron devices meeting, 33.6. 1-33.6. 4, 2011 | 439 | 2011 |
Tunneling versus thermionic emission in one-dimensional semiconductors J Appenzeller, M Radosavljević, J Knoch, P Avouris Physical review letters 92 (4), 48301, 2004 | 378 | 2004 |
Tri-gate transistor architecture with high-k gate dielectrics, metal gates and strain engineering J Kavalieros, B Doyle, S Datta, G Dewey, M Doczy, B Jin, D Lionberger, ... 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 50-51, 2006 | 345 | 2006 |
Block contact architectures for nanoscale channel transistors M Radosavljevic, A Majumdar, BS Doyle, J Kavalieros, ML Doczy, ... US Patent 7,898,041, 2011 | 334* | 2011 |
Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic … M Radosavljevic, B Chu-Kung, S Corcoran, G Dewey, MK Hudait, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 278 | 2009 |
Drain voltage scaling in carbon nanotube transistors M Radosavljević, S Heinze, J Tersoff, P Avouris Applied Physics Letters 83, 2435, 2003 | 266 | 2003 |
Transistor gate-channel arrangements GW Dewey, R Rios, S Shivaraman, M Radosavljevic, KE Millard, ... US Patent App. 16/080,101, 2019 | 252 | 2019 |
Block contact architectures for nanoscale channel transistors M Radosavljevic, A Majumdar, BS Doyle, J Kavalieros, ML Doczy, ... US Patent 7,279,375, 2007 | 219 | 2007 |
Block contact architectures for nanoscale channel transistors M Radosavljevic, A Majumdar, BS Doyle, J Kavalieros, ML Doczy, ... US Patent 7,279,375, 2007 | 219 | 2007 |
Application of high-< i> κ</i> gate dielectrics and metal gate electrodes to enable silicon and non-silicon logic nanotechnology R Chau, J Brask, S Datta, G Dewey, M Doczy, B Doyle, J Kavalieros, B Jin, ... Microelectronic engineering 80, 1-6, 2005 | 215 | 2005 |
CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture M Radosavljevic, R Pillarisetty, G Dewey, N Mukherjee, J Kavalieros, ... US Patent 9,123,567, 2015 | 208 | 2015 |
CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture M Radosavljevic, R Pillarisetty, G Dewey, N Mukherjee, J Kavalieros, ... US Patent 9,123,567, 2015 | 208 | 2015 |
Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to … M Radosavljevic, G Dewey, D Basu, J Boardman, B Chu-Kung, ... 2011 International Electron Devices Meeting, 33.1. 1-33.1. 4, 2011 | 195 | 2011 |
Unexpected scaling of the performance of carbon nanotube Schottky-barrier transistors S Heinze, M Radosavljević, J Tersoff, P Avouris Physical Review B 68 (23), 235418, 2003 | 193 | 2003 |
Unexpected scaling of the performance of carbon nanotube Schottky-barrier transistors S Heinze, M Radosavljević, J Tersoff, P Avouris Physical Review B 68 (23), 235418, 2003 | 193 | 2003 |