High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide R Nagy, M Niethammer, M Widmann, YC Chen, P Udvarhelyi, C Bonato, ... Nature communications 10 (1), 1-8, 2019 | 239 | 2019 |
Spin-strain interaction in nitrogen-vacancy centers in diamond P Udvarhelyi, VO Shkolnikov, A Gali, G Burkard, A Pályi Physical Review B 98 (7), 075201, 2018 | 119 | 2018 |
Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide N Morioka, C Babin, R Nagy, I Gediz, E Hesselmeier, D Liu, M Joliffe, ... Nature communications 11 (1), 2516, 2020 | 81 | 2020 |
Electrically driven optical interferometry with spins in silicon carbide KC Miao, A Bourassa, CP Anderson, SJ Whiteley, AL Crook, SL Bayliss, ... Science Advances 5 (11), eaay0527, 2019 | 75 | 2019 |
Vibronic States and Their Effect on the Temperature and Strain Dependence of Silicon-Vacancy Qubits in - P Udvarhelyi, G Thiering, N Morioka, C Babin, F Kaiser, D Lukin, ... Physical Review Applied 13 (5), 054017, 2020 | 67 | 2020 |
Spectrally stable defect qubits with no inversion symmetry for robust spin-to-photon interface P Udvarhelyi, R Nagy, F Kaiser, SY Lee, J Wrachtrup, A Gali Physical Review Applied 11 (4), 044022, 2019 | 63 | 2019 |
Detection of single W-centers in silicon Y Baron, A Durand, P Udvarhelyi, T Herzig, M Khoury, S Pezzagna, ... ACS photonics 9 (7), 2337-2345, 2022 | 58 | 2022 |
Identification of a telecom wavelength single photon emitter in silicon P Udvarhelyi, B Somogyi, G Thiering, A Gali Physical review letters 127 (19), 196402, 2021 | 49 | 2021 |
Ab Initio Spin-Strain Coupling Parameters of Divacancy Qubits in Silicon Carbide P Udvarhelyi, A Gali Physical Review Applied 10 (5), 054010, 2018 | 36 | 2018 |
Giant shift upon strain on the fluorescence spectrum of VNNB color centers in h-BN S Li, JP Chou, A Hu, MB Plenio, P Udvarhelyi, G Thiering, M Abdi, A Gali npj Quantum Information 6 (1), 85, 2020 | 35 | 2020 |
Carbon defect qubit in two-dimensional WS2 S Li, G Thiering, P Udvarhelyi, V Ivády, A Gali Nature communications 13 (1), 1210, 2022 | 26 | 2022 |
Ultraviolet quantum emitters in hexagonal boron nitride from carbon clusters S Li, A Pershin, G Thiering, P Udvarhelyi, A Gali The Journal of Physical Chemistry Letters 13 (14), 3150-3157, 2022 | 24 | 2022 |
Controlled Surface Modification to Revive Shallow NV– Centers JN Neethirajan, T Hache, D Paone, D Pinto, A Denisenko, R Stöhr, ... Nano Letters 23 (7), 2563-2569, 2023 | 14 | 2023 |
Ab initio theory of the defect in diamond for quantum memory implementation P Udvarhelyi, G Thiering, E Londero, A Gali Physical Review B 96 (15), 155211, 2017 | 12 | 2017 |
An L-band emitter with quantum memory in silicon P Udvarhelyi, A Pershin, P Deák, A Gali npj Computational Materials 8 (1), 262, 2022 | 11 | 2022 |
Optically active spin defects in few-layer thick hexagonal boron nitride A Durand, T Clua-Provost, F Fabre, P Kumar, J Li, JH Edgar, P Udvarhelyi, ... Physical Review Letters 131 (11), 116902, 2023 | 10 | 2023 |
The kinetics of carbon pair formation in silicon prohibits reaching thermal equilibrium P Deák, P Udvarhelyi, G Thiering, A Gali Nature Communications 14 (1), 361, 2023 | 8 | 2023 |
A planar defect spin sensor in a two-dimensional material susceptible to strain and electric fields P Udvarhelyi, T Clua-Provost, A Durand, J Li, JH Edgar, B Gil, ... npj Computational Materials 9 (1), 150, 2023 | 6 | 2023 |
Ab Initio Study of (100) Diamond Surface Spins JP Chou, P Udvarhelyi, NP De Leon, A Gali Physical Review Applied 20 (1), 014040, 2023 | 5 | 2023 |
Strain engineering for transition-metal defects in SiC B Tissot, P Udvarhelyi, A Gali, G Burkard Physical Review B 109 (5), 054111, 2024 | 2 | 2024 |