| Improved performance of semi-polar (11-22) GaN-based light-emitting diodes grown on SiNx interlayer J Jeong, J Jang, J Hwang, C Jung, J Kim, K Lee, H Lim, O Nam Journal of crystal growth 370, 114-119, 2013 | 52 | 2013 |
| Growth and characterization of high quality AlN using combined structure of low temperature buffer and superlattices for applications in the deep ultraviolet J Kim, J Pyeon, M Jeon, O Nam Japanese Journal of Applied Physics 54 (8), 081001, 2015 | 49 | 2015 |
| Improved carrier injection of AlGaN-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers B So, J Kim, T Kwak, T Kim, J Lee, U Choi, O Nam RSC advances 8 (62), 35528-35533, 2018 | 39 | 2018 |
| Efficiency improvement of deep‐ultraviolet light emitting diodes with gradient electron blocking layers B So, J Kim, E Shin, T Kwak, T Kim, O Nam physica status solidi (a) 215 (10), 1700677, 2018 | 35 | 2018 |
| Deep-ultraviolet AlGaN/AlN core-shell multiple quantum wells on AlN nanorods via lithography-free method J Kim, U Choi, J Pyeon, B So, O Nam Scientific reports 8 (1), 935, 2018 | 28 | 2018 |
| AlN nanostructures fabricated on a vicinal sapphire (0001) substrate D Eom, J Kim, K Lee, M Jeon, C Heo, J Pyeon, O Nam Crystal Growth & Design 15 (3), 1242-1248, 2015 | 15 | 2015 |
| Defect reduction in (11–22) semipolar GaN with embedded InN islands on m-plane sapphire C Jung, J Jang, J Hwang, J Jeong, J Kim, O Nam Journal of crystal growth 370, 26-29, 2013 | 15 | 2013 |
| Fabrication of AlN nano-structures using polarity control by high temperature metalorganic chemical vapor deposition D Eom, J Kim, K Lee, M Jeon, C Heo, J Pyeon, O Nam Journal of Nanoscience and Nanotechnology 15 (7), 5144-5147, 2015 | 13 | 2015 |
| Self-compensation effect in Si-doped Al0. 55Ga0. 45N layers for deep ultraviolet applications J Pyeon, J Kim, M Jeon, K Ko, E Shin, O Nam Japanese Journal of Applied Physics 54 (5), 051002, 2015 | 11 | 2015 |
| Growth of Semipolar InGaN Quantum Well Structure Using Self-Organized Nano-Masks on m-Sapphire Y Ryu, J Jeong, J Jang, K Lee, D Min, J Kim, M Kim, S Moon, G Yoo, ... Journal of Nanoscience and Nanotechnology 13 (9), 6429-6433, 2013 | 5 | 2013 |
| Improvement of crystal quality and optical property in semi-polar (11-22) GaN-based light-emitting diodes grown on a SiNx interlayer J Jeong Journal of Ceramic Processing Research 13 (5), 617-621, 2012 | 4 | 2012 |
| Polarity of aluminum nitride layers grown by high-temperature metal organic chemical vapor deposition K Lee, J Kim, D Eom, M Jeon, C Heo, J Pyeon, O Nam Journal of Nanoscience and Nanotechnology 16 (11), 11807-11810, 2016 | 2 | 2016 |
| Size‐Dependent Characteristics of InGaN‐Based Blue and Green Micro‐Light‐Emitting Diodes S Mohan, J Jeong, M Kim, Y Heo, J Park, J Lee, J Kim, J Heo, O Nam physica status solidi (a), 2300642, 2024 | 1 | 2024 |
| High Quality Al-Polar AlN Growth on (0001) Sapphire Using Polarity-Selective Thermal Etching by High Temperature Metalorganic Chemical Vapor Deposition M Jeon, J Kim, K Lee, D Eom, J Pyeon, C Heo, O Nam Journal of Nanoscience and Nanotechnology 15 (11), 8401-8406, 2015 | | 2015 |
| Improvement of crystal quality in semipolar GaN layer by using self-organized nanomasks on m-sapphire Y Ryu, J Jeong, J Jang, K Lee, D Min, J Kim, M Kim, S Moon, G Yoo, ... Journal of Ceramic Processing Research 14 (4), 587-590, 2013 | | 2013 |
Okhyun NamTU KOREA (Tech University of Korea)在 tukorea.ac.kr 的电子邮件经过验证
