| Large-scale generation of functional mRNA-encapsulating exosomes via cellular nanoporation Z Yang, J Shi, J Xie, Y Wang, J Sun, T Liu, Y Zhao, X Zhao, X Wang, Y Ma, ... Nature biomedical engineering 4 (1), 69-83, 2020 | 501 | 2020 |
| Nanochannel electroporation delivers precise amounts of biomolecules into living cells PE Boukany, A Morss, W Liao, B Henslee, HC Jung, X Zhang, B Yu, ... Nature nanotechnology 6 (11), 747-754, 2011 | 350 | 2011 |
| AlGaN/GaN HEMTs on SiC with fT of over 120 GHz V Kumar, W Lu, R Schwindt, A Kuliev, G Simin, J Yang, MA Khan, ... IEEE Electron Device Letters 23 (8), 455-457, 2002 | 319 | 2002 |
| AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/and low microwave noise W Lu, J Yang, MA Khan, I Adesida IEEE Transactions on Electron Devices 48 (3), 581-585, 2001 | 304 | 2001 |
| Large area single crystal (0001) oriented MoS2 MR Laskar, L Ma, S Kannappan, P Sung Park, S Krishnamoorthy, ... Applied Physics Letters 102 (25), 2013 | 268 | 2013 |
| Graphene supercapacitor with both high power and energy density H Yang, S Kannappan, AS Pandian, JH Jang, YS Lee, W Lu Nanotechnology 28 (44), 445401, 2017 | 194 | 2017 |
| A comparative study of surface passivation on AlGaN/GaN HEMTs W Lu, V Kumar, R Schwindt, E Piner, I Adesida Solid-State Electronics 46 (9), 1441-1444, 2002 | 193 | 2002 |
| -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz Z Xia, H Xue, C Joishi, J Mcglone, NK Kalarickal, SH Sohel, M Brenner, ... IEEE Electron Device Letters 40 (7), 1052-1055, 2019 | 157 | 2019 |
| Topical tissue nano-transfection mediates non-viral stroma reprogramming and rescue D Gallego-Pérez, D Pal, S Ghatak, V Malkoc, N Higuita-Castro, ... Nature nanotechnology 12 (10), 974-979, 2017 | 152 | 2017 |
| DC, RF, and microwave noise performance of AlGaN-GaN field effect transistors dependence of aluminum concentration W Lu, V Kumar, EL Piner, I Adesida IEEE Transactions on Electron Devices 50 (4), 1069-1074, 2003 | 130 | 2003 |
| Gate current leakage and breakdown mechanism in unpassivated AlGaN∕ GaN high electron mobility transistors by post-gate annealing H Kim, J Lee, D Liu, W Lu Applied Physics Letters 86 (14), 2005 | 117 | 2005 |
| 3D nanochannel electroporation for high-throughput cell transfection with high uniformity and dosage control L Chang, P Bertani, D Gallego-Perez, Z Yang, F Chen, C Chiang, ... Nanoscale 8 (1), 243-252, 2016 | 115 | 2016 |
| Barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures: Determination and effect of metal work functions Z Lin, W Lu, J Lee, D Liu, JS Flynn, GR Brandes Applied Physics Letters 82 (24), 4364-4366, 2003 | 108 | 2003 |
| Magnetic tweezers‐based 3D microchannel electroporation for high‐throughput gene transfection in living cells L Chang, M Howdyshell, WC Liao, CL Chiang, D Gallego‐Perez, Z Yang, ... Small 11 (15), 1818-1828, 2015 | 106 | 2015 |
| Dielectrophoresis-assisted 3D nanoelectroporation for non-viral cell transfection in adoptive immunotherapy L Chang, D Gallego-Perez, X Zhao, P Bertani, Z Yang, CL Chiang, ... Lab on a Chip 15 (15), 3147-3153, 2015 | 106 | 2015 |
| Micro-/nanoscale electroporation L Chang, L Li, J Shi, Y Sheng, W Lu, D Gallego-Perez, LJ Lee Lab on a Chip 16 (21), 4047-4062, 2016 | 105 | 2016 |
| AlGaN/GaN Schottky diode hydrogen sensor performance at high temperatures with different catalytic metals J Song, W Lu, JS Flynn, GR Brandes Solid-state electronics 49 (8), 1330-1334, 2005 | 105 | 2005 |
| Pt-AlGaN∕ GaN Schottky diodes operated at 800 C for hydrogen sensing J Song, W Lu, JS Flynn, GR Brandes Applied Physics Letters 87 (13), 2005 | 87 | 2005 |
| Effect of on the etch profile of InP/InGaAsP alloys in inductively coupled plasma reactive ion etching chemistries for photonic device fabrication SL Rommel, JH Jang, W Lu, G Cueva, L Zhou, I Adesida, G Pajer, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002 | 86 | 2002 |
| Hydrogenated IGZO thin-film transistors using high-pressure hydrogen annealing SI Oh, G Choi, H Hwang, W Lu, JH Jang IEEE transactions on electron devices 60 (8), 2537-2541, 2013 | 82 | 2013 |
Siddharth RajanElectrical and Computer Engineering, Ohio State University在 ece.osu.edu 的电子邮件经过验证
