| First demonstration of BEOL-compatible ferroelectric TCAM featuring a-IGZO Fe-TFTs with large memory window of 2.9 V, scaled channel length of 40 nm, and high endurance of 10 8 … C Sun, K Han, S Samanta, Q Kong, J Zhang, H Xu, X Wang, A Kumar, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 41 | 2021 |
| Temperature-dependent operation of InGaZnO ferroelectric thin-film transistors with a metal-ferroelectric-metal-insulator-semiconductor structure C Sun, Z Zheng, K Han, S Samanta, J Zhou, Q Kong, J Zhang, H Xu, ... IEEE Electron Device Letters 42 (12), 1786-1789, 2021 | 25 | 2021 |
| A Metal-Insulator-Semiconductor Non-Volatile Programmable Capacitor Based on a HfAlOₓ Ferroelectric Film Z Zhou, J Zhou, X Wang, H Wang, C Sun, K Han, Y Kang, Z Zheng, H Ni, ... IEEE Electron Device Letters 41 (12), 1837-1840, 2020 | 25 | 2020 |
| Highly scaled InGaZnO ferroelectric field-effect transistors and ternary content-addressable memory C Sun, K Han, S Samanta, Q Kong, J Zhang, H Xu, X Wang, A Kumar, ... IEEE Transactions on Electron Devices 69 (9), 5262-5269, 2022 | 17 | 2022 |
| Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar Array Featuring High CHCS/CLCS, Fast Speed, and … Z Zhou, J Leming, J Zhou, Z Zheng, Y Chen, K Han, Y Kang, X Gong 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 17 | 2022 |
| Low-power and scalable retention-enhanced IGZO TFT eDRAM-based charge-domain computing J Liu, C Sun, W Tang, Z Zheng, Y Liu, H Yang, C Jiang, K Ni, X Gong, X Li 2021 IEEE International Electron Devices Meeting (IEDM), 21.1. 1-21.1. 4, 2021 | 17 | 2021 |
| Al-doped and Deposition Temperature-engineered HfO2 Near Morphotropic Phase Boundary with Record Dielectric Permittivity (~68) J Zhou, Z Zhou, L Jiao, X Wang, Y Kang, H Wang, K Han, Z Zheng, ... 2021 IEEE International Electron Devices Meeting (IEDM), 13.4. 1-13.4. 4, 2021 | 13 | 2021 |
| Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High G m of 479.5 μS/μm (V DS of 1 V) and f T of 18.3 GHz (V DS of 3 V) C Wang, A Kumar, K Han, C Sun, H Xu, J Zhang, Y Kang, Q Kong, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 11 | 2022 |
| Time-dependent Landau-Ginzburg equation-based ferroelectric tunnel junction modeling with dynamic response and multi-domain characteristics Z Zhou, L Jiao, J Zhou, Q Kong, S Luo, C Sun, Z Zheng, X Wang, D Zhang, ... IEEE Electron Device Letters 43 (1), 158-161, 2021 | 11 | 2021 |
| A 6.5 nm thick anti-ferroelectric HfAlO x film for energy storage devices with a high density of 63.7 J cm− 3 J Zhou, Y Kang, X Wang, Z Zhou, H Ni, L Jiao, Z Zheng, X Gong Journal of Physics D: Applied Physics 55 (1), 014003, 2021 | 11 | 2021 |
| Top-gate short channel amorphous indium-gallium-zinc-oxide thin film transistors with sub-1.2 nm equivalent oxide thickness K Han, S Samanta, C Sun, X Gong IEEE Journal of the Electron Devices Society 9, 1125-1130, 2021 | 11 | 2021 |
| New insights into the impact of hydrogen evolution on the reliability of IGZO FETs: Experiment and modeling Q Kong, G Liu, C Sun, Z Zheng, D Zhang, J Zhang, H Xu, L Liu, Z Zhou, ... 2022 International Electron Devices Meeting (IEDM), 30.2. 1-30.2. 4, 2022 | 10 | 2022 |
| Inversion-type ferroelectric capacitive memory and its 1-kbit crossbar array Z Zhou, L Jiao, J Zhou, Z Zheng, Y Chen, K Han, Y Kang, X Gong IEEE Transactions on Electron Devices 70 (4), 1641-1647, 2023 | 7 | 2023 |
| Boosting the memory window of the BEOL-compatible MFMIS ferroelectric/anti-ferroelectric FETs by charge injection Z Zheng, C Sun, L Jiao, D Zhang, Z Zhou, X Wang, G Liu, Q Kong, Y Chen, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 7 | 2022 |
| Novel a-IGZO anti-ferroelectric FET LIF neuron with co-integrated ferroelectric FET synapse for spiking neural networks C Sun, X Wang, H Xu, J Zhang, Z Zheng, Q Kong, Y Kang, K Han, L Jiao, ... 2022 International Electron Devices Meeting (IEDM), 2.1. 1-2.1. 4, 2022 | 6 | 2022 |
| Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors C Sun, C Li, S Samanta, K Han, Z Zheng, J Zhang, Q Kong, H Xu, Z Zhou, ... Advanced Electronic Materials 8 (12), 2200643, 2022 | 5 | 2022 |
| BEOL-compatible Ta/HZO/W ferroelectric tunnel junction with low operating voltage targeting for low power application L Jiao, Z Zhou, Z Zheng, Y Kang, C Sun, Q Kong, X Wang, D Zhang, G Liu, ... 2022 International Conference on IC Design and Technology (ICICDT), 5-7, 2022 | 5 | 2022 |
| Three-Dimensional Integrated GaN-based DC-DC Converter with an Inductor Substrate Z Qi, C Zhao, L Wang, F Yang, Y Pei, Z Zheng 2019 IEEE Energy Conversion Congress and Exposition (ECCE), 832-838, 2019 | 5 | 2019 |
| A Surface Potential Based Compact Model for Ferroelectric a-InGaZnO-TFTs Toward Temperature Dependent Device Characterization L Xu, J Guo, C Sun, Z Zheng, Y Xu, S Huang, K Han, W Wei, Z Guo, ... IEEE Electron Device Letters 44 (3), 412-415, 2023 | 4 | 2023 |
| Deep insights into the Interplay of Polarization Switching, Charge Trapping, and Soft Breakdown in Metal-Ferroelectric-Metal-Insulator-Semiconductor Structure: Experiment and … X Wang, C Sun, Z Zheng, L Jiao, Z Zhou, D Zhang, G Liu, Q Kong, ... 2022 International Electron Devices Meeting (IEDM), 13.3. 1-13.3. 4, 2022 | 4 | 2022 |
Xiao GongNational University of Singapore在 nus.edu.sg 的电子邮件经过验证
