| 2D materials: roadmap to CMOS integration C Huyghebaert, T Schram, Q Smets, TK Agarwal, D Verreck, S Brems, ... 2018 IEEE International Electron Devices Meeting (IEDM), 22.1. 1-22.1. 4, 2018 | 98 | 2018 |
| Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity D Chiappe, J Ludwig, A Leonhardt, S El Kazzi, AN Mehta, T Nuytten, ... Nanotechnology 29 (42), 425602, 2018 | 65 | 2018 |
| Material-Selective Doping of 2D TMDC through AlxOy Encapsulation A Leonhardt, D Chiappe, VV Afanas’ ev, S El Kazzi, I Shlyakhov, ... ACS applied materials & interfaces 11 (45), 42697-42707, 2019 | 58 | 2019 |
| Improving MOCVD MoS2 Electrical Performance: Impact of Minimized Water and Air Exposure Conditions A Leonhardt, D Chiappe, I Asselberghs, C Huyghebaert, I Radu, ... IEEE Electron Device Letters 38 (11), 1606-1609, 2017 | 44 | 2017 |
| Multicomponent covalent chemical patterning of graphene MC Rodríguez González, A Leonhardt, H Stadler, S Eyley, W Thielemans, ... ACS nano 15 (6), 10618-10627, 2021 | 38 | 2021 |
| Devices and circuits using novel 2-D materials: a perspective for future VLSI systems GV Resta, A Leonhardt, Y Balaji, S De Gendt, PE Gaillardon, G De Micheli IEEE Transactions on Very Large Scale Integration (VLSI) Systems 27 (7 …, 2019 | 31 | 2019 |
| Growth of millimeter-sized graphene single crystals on Al2O3 (0001)/Pt (111) template wafers using chemical vapor deposition K Verguts, Y Defossez, A Leonhardt, J De Messemaeker, K Schouteden, ... ECS Journal of Solid State Science and Technology 7 (12), M195, 2018 | 27 | 2018 |
| The Role of Nonidealities in the Scaling of MoS2 FETs D Verreck, G Arutchelvan, CJL De La Rosa, A Leonhardt, D Chiappe, ... IEEE Transactions on Electron Devices 65 (10), 4635-4640, 2018 | 23 | 2018 |
| Understanding ambipolar transport in MoS2 field effect transistors: the substrate is the key V Mootheri, A Leonhardt, D Verreck, I Asselberghs, C Huyghebaert, ... Nanotechnology 32 (13), 135202, 2021 | 21 | 2021 |
| Graphene based Van der Waals contacts on MoS2 field effect transistors V Mootheri, G Arutchelvan, S Banerjee, S Sutar, A Leonhardt, ME Boulon, ... 2D Materials 8 (1), 015003, 2020 | 20 | 2020 |
| High performance La-doped HZO based ferroelectric capacitors by interfacial engineering MI Popovici, J Bizindavyi, P Favia, S Clima, MNK Alam, ... 2022 International Electron Devices Meeting (IEDM), 6.4. 1-6.4. 4, 2022 | 16 | 2022 |
| internal photoemission of electrons from 2-dimensional semiconductors VV Afanas' ev, D Chiappe, A Leonhardt, M Houssa, C Huyghebaert, ... ECS Transactions 80 (1), 191, 2017 | 15 | 2017 |
| Use of the Indirect Photoluminescence Peak as an Optical Probe of Interface Defectivity in MoS2 A Leonhardt, CJL de la Rosa, T Nuytten, L Banszerus, S Sergeant, ... Advanced Materials Interfaces 7 (18), 2000413, 2020 | 13 | 2020 |
| Relation between film thickness and surface doping of MoS2 based field effect transistors CJ Lockhart de la Rosa, G Arutchelvan, A Leonhardt, C Huyghebaert, ... APL Materials 6 (5), 2018 | 13 | 2018 |
| 2018 IEEE Int. Electron Devices Meeting (IEDM) C Huyghebaert, T Schram, Q Smets, TK Agarwal, D Verreck, S Brems, ... IEEE, 2018 | 13 | 2018 |
| Analysis of transferred MoS2 layers grown by MOCVD: evidence of Mo vacancy related defect formation B Schoenaers, A Leonhardt, AN Mehta, A Stesmans, D Chiappe, ... ECS Journal of Solid State Science and Technology 9 (9), 093001, 2020 | 11 | 2020 |
| Dipole-first gate stack as a scalable and thermal budget flexible multi-Vt solution for nanosheet/CFET devices H Arimura, LÅ Ragnarsson, Y Oniki, J Franco, A Vandooren, S Brus, ... 2021 IEEE International Electron Devices Meeting (IEDM), 13.5. 1-13.5. 4, 2021 | 9 | 2021 |
| Nanoscale FinFET global parameter extraction for the BSIM-CMG model A Leonhardt, LF Ferreira, S Bampi 2015 IEEE 6th Latin American Symposium on Circuits & Systems (LASCAS), 1-4, 2015 | 6 | 2015 |
| Ga+ focused ion beam lithography as a viable alternative for multiple fin field effect transistor prototyping A Leonhardt, MV Puydinger dos Santos, JA Diniz, LT Manera, LPB Lima Journal of Vacuum Science & Technology B 34 (6), 2016 | 5 | 2016 |
| A novel self-aligned double patterning integrated with Ga+ focused ion beam milling for silicon nanowire definition AM Rosa, A Leonhardt, LO de Souza, LPB Lima, MVP dos Santos, ... Microelectronic engineering 237, 111493, 2021 | 4 | 2021 |
Cedric HuyghebaertBlack semiconductor在 blacksemi.com 的电子邮件经过验证
