| Positive Shift in Threshold Voltage for Reactive-Ion- Sputtered Al2O3/AlInN/GaN MIS-HEMT G Dutta, S Turuvekere, N Karumuri, N DasGupta, A DasGupta IEEE Electron Device Letters 35 (11), 1085-1087, 2014 | 62 | 2014 |
| Gate leakage mechanisms in AlInN/GaN and AlGaN/GaN MIS-HEMTs and its modeling G Dutta, N DasGupta, A DasGupta IEEE Transactions on Electron Devices 64 (9), 3609-3615, 2017 | 54 | 2017 |
| Effect of Sputtered-Al2O3Layer Thickness on the Threshold Voltage of III-Nitride MIS-HEMTs G Dutta, N DasGupta, A DasGupta IEEE Transactions on Electron Devices 63 (4), 1450-1458, 2016 | 44 | 2016 |
| Low-Temperature ICP-CVD SiNxas Gate Dielectric for GaN-Based MIS-HEMTs G Dutta, N DasGupta, A DasGupta IEEE Transactions on Electron Devices 63 (12), 4693-4701, 2016 | 36 | 2016 |
| A compact model of drain current for GaN HEMTs based on 2-DEG charge linearization N Karumuri, G Dutta, N DasGupta, A DasGupta IEEE Transactions on Electron Devices 63 (11), 4226-4232, 2016 | 29 | 2016 |
| Modeling and Analysis of Normally-OFF p-GaN Gate AlGaN/GaN HEMT as an ON-Chip Capacitor A Abdulsalam, N Karumuri, G Dutta IEEE Transactions on Electron Devices 67 (9), 3536 - 3540, 2020 | 24 | 2020 |
| On the threshold voltage of normally-OFF AlGaN/GaN heterostructure field effect transistors (HFETs) with p-(Al) GaN gate A Abdulsalam, G Dutta Semiconductor Science and Technology 35 (1), 015020, 2020 | 16 | 2020 |
| Electrical properties of reactive-ion-sputtered Al2O3 on 4H-SiC M Shukla, G Dutta, R Mannam, N DasGupta Thin Solid Films 607, 1-6, 2016 | 14 | 2016 |
| Analysis of the electrical characteristics of GaInP/GaAs HBTs including the recombination effect G Dutta, S Basu Journal of semiconductors 33 (5), 054002, 2012 | 11 | 2012 |
| Investigation of Trap Induced Gate Lag Phenomenon in AlGaN/GaN High Electron Mobility Transistors K De, G Dutta IEEE 4th International Conference on Emerging Electronics (ICEE), 2018 | 7 | 2018 |
| Realistic nonlocal refrigeration engine based on Coulomb-coupled systems A Barman, S Halder, SK Varshney, G Dutta, A Singha Physical Review E 103 (1), 012131, 2021 | 6 | 2021 |
| Low Temperature and High Pressure Oxidized Al2O3 as Gate Dielectric for AlInN/GaN MIS-HEMTs S Kanaga, G Dutta, B Kushwah, N DasGupta, A DasGupta IEEE Transactions on Device and Materials Reliability 20 (3), 613 - 621, 2020 | 4 | 2020 |
| Study of interface traps for GaN-based MIS-HEMTs with high pressure oxidized aluminium as gate dielectric B Kushwah, S Kanaga, G Dutta, NDGA DasGupta IEEE International Conference on Emerging Electronics (ICEE) 2018, 2019 | 3 | 2019 |
| Analytical modelling of InGaP/GaAs HBTs G Dutta, S Basu IEEE Eighth International Conference on Advanced Semiconductor Devices and …, 2010 | 3 | 2010 |
| Normally-Off β-(AlxGa1-x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors With p-GaN Gate: Proposal and Investigation AD Meshram, A Sengupta, TK Bhattacharyya, G Dutta IEEE Transactions on Electron Devices 70 (2), 454-460, 2023 | 2 | 2023 |
| Dual-gate β-Ga2O3 nanomembrane transistors: device operation and analytical modeling A Sengupta, TK Bhattacharyya, G Dutta Journal of Physics D: Applied Physics 54 (40), 405103 (1-11), 2021 | 2 | 2021 |
| Effect of post deposition annealing on the electrical properties of YSZ thin films deposited by pulsed laser technique S Sinha, G Dutta, R Mannam, N DasGupta, MSR Rao Applied Surface Science 513, 145496, 2020 | 2 | 2020 |
| AlGaN/GaN HEMT Fabrication and Challenges G Dutta, S Kanaga, N DasGupta, A DasGupta Handbook for III-V High Electron Mobility Transistor Technologies, 2019 | 2 | 2019 |
| Trapping Phenomenon in AlInN/GaN HEMTs: A Study Based on Drain Current Transient Spectroscopy A Khandelwal, G Dutta, A DasGupta, N DasGupta International Workshop on the Physics of Semiconductor and Devices, 219-223, 2019 | 1 | 2019 |
| Comparison of shallow interface traps in AlGaN/GaN MIS-devices with three different gate dielectrics A Tomer, G Dutta, A DasGupta, N DasGupta IEEE 3rd International Conference on Emerging Electronics (ICEE-2016), 1-3, 2016 | 1 | 2016 |
Amitava DasGuptaProfessor, IIT Madras在 ee.iitm.ac.in 的电子邮件经过验证
