| Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics MHP Ju Yong Park, Duk‐Hyun Choe, Dong Hyun Lee, Geun Taek Yu, Kun Yang, Se ... Advanced Materials, 2204904, 2022 | 114* | 2022 |
| Domains and domain dynamics in fluorite-structured ferroelectrics MHP Dong Hyun Lee, Younghwan Lee, Kun Yang, Ju Yong Park, Se Hyun Kim ... Applied Physics Reviews 8 (2), 021312, 2021 | 78 | 2021 |
| A perspective on semiconductor devices based on fluorite-structured ferroelectrics from the materials–device integration perspective JY Park, K Yang, DH Lee, SH Kim, Y Lee, PRS Reddy, JL Jones, MH Park Journal of Applied Physics 128 (24), 240904, 2020 | 67 | 2020 |
| Neuromorphic devices based on fluorite‐structured ferroelectrics MHP Dong Hyun Lee, Geun Hyeong Park, Se Hyun Kim, Ju Yong Park, Kun Yang ... InfoMat 4 (12), e12380, 2022 | 36 | 2022 |
| Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0. 5Zr0. 5O2 thin films MHP Dong Hyun Lee, Geun Taek Yu, Ju Yong Park, Se Hyun Kim, Kun Yang, Geun ... Acta Materialia 222, 117405, 2022 | 30 | 2022 |
| Engineering Strategies in Emerging Fluorite-Structured Ferroelectrics MHP Ju Yong Park, Dong Hyun Lee, Kun Yang, Se Hyun Kim, Geun Taek Yu, Geun ... ACS Applied Electronic Materials, 2021 | 20 | 2021 |
| Interfacial engineering of a Mo/Hf0.3Zr0.7O2/Si capacitor using the direct scavenging effect of a thin Ti layer MHP Se Hyun Kim, Geun Taek Yu, Geun Hyeong Park, Dong Hyun Lee, Ju Yong Park ... Chemical communications, 2021 | 20 | 2021 |
| Effect of stress on fluorite-structured ferroelectric thin films for semiconductor devices Y Lee, HW Jeong, SH Kim, K Yang, MH Park Materials Science in Semiconductor Processing 160, 107411, 2023 | 18 | 2023 |
| Unveiled Ferroelectricity in Well‐Known Non‐Ferroelectric Materials and Their Semiconductor Applications DH Lee, Y Lee, YH Cho, H Choi, SH Kim, MH Park Advanced Functional Materials 33 (42), 2303956, 2023 | 17 | 2023 |
| Wake-up-mitigated giant ferroelectricity in Hf0. 5Zr0. 5O2 thin films through oxygen-providing, surface-oxidized W electrode K Yang, GY Kim, JJ Ryu, DH Lee, JY Park, SH Kim, GH Park, GT Yu, ... Materials Science in Semiconductor Processing 164, 107565, 2023 | 14 | 2023 |
| Perspective on Ferroelectric Devices: Lessons from Interfacial Chemistry MHP Kun Yang, Se Hyun Kim, Hyun Woo Jeong, Dong Hyun Lee, Geun Hyeong Park ... Chemistry of Materials, 2023 | 13 | 2023 |
| Energy conversion and storage using artificially induced antiferroelectricity in HfO2/ZrO2 nanolaminates MHP KunYang, Eun Been Lee, Dong Hyun Lee, Ju YongPark, Se Hyun Kim, Geun ... Composites Part B: Engineering 236, 109824, 2022 | 13 | 2022 |
| Mitigation of field-driven dynamic phase evolution in ferroelectric Hf0. 5Zr0. 5O2 films by adopting oxygen-supplying electrode Y Lee, SH Kim, HW Jeong, GH Park, J Lee, YY Kim, MH Park Applied Surface Science 648, 158948, 2024 | 11 | 2024 |
| Emerging fluorite-structured antiferroelectrics and their semiconductor applications GH Park, DH Lee, H Choi, T Kwon, YH Cho, SH Kim, MH Park ACS Applied Electronic Materials 5 (2), 642-663, 2023 | 11 | 2023 |
| Improved ferroelectricity in Hf0.5Zr0.5O2 by inserting an upper HfOxNy interfacial layer CSH Beom Yong Kim, Se Hyun Kim, Hyeon Woo Park, Yong Bin Lee, Suk Hyun Lee ... Applied Physics Letters 119 (12), 122902, 2021 | 9 | 2021 |
| Effect of Electrode Material on the Polarization Switching Kinetics of Hf0.5Zr0.5O2 film DH Lee, GH Park, SH Kim, K Yang, J Lee, H Choi, Y Lee, JJ Ryu, JI Lee, ... IEEE Electron Device Letters, 2023 | 5 | 2023 |
| Non-centrosymmetric crystallization in ferroelectric hafnium zirconium oxide via photon-assisted defect modulation S Lee, JG Choi, SH Kim, WJ Lee, T Kim, MH Park, MH Yoon Materials Science and Engineering: R: Reports 159, 100800, 2024 | 1 | 2024 |
| Depolarization mitigated in ferroelectric Hf0.5Zr0.5O2 ultrathin films (< 5 nm) on Si substrate by interface engineering. SH Kim, Y Lee, DH Lee, GH Park, HW Jeong, K Yang, YH Cho, YY Kim, ... Journal of Advanced Ceramics 13 (3), 2024 | | 2024 |
| Ferroelectricity of HfZrO Thin Film Induced at 350 C by Thermally Accelerated Nucleation During Atomic Layer Deposition J Lee, SH Kim, H Choi, HW Jeong, K Yang, JY Park, YH Cho, SY Park, ... IEEE Transactions on Electron Devices, 2024 | | 2024 |
| Enhanced Ferroelectricity and Alleviated Depolarization in Ultra-thin Hf0.5Zr0.5O₂-based MFIS capacitor by Interface Engineering SH Kim, HW Jeong, K Yang, GH Park, DH Lee, Y Lee, MH Park 한국표면공학회 학술발표회 초록집, 105-105, 2022 | | 2022 |
