| Investigation of trapping and hot-electron effects in GaN HEMTs by means of a combined electrooptical method M Meneghini, N Ronchi, A Stocco, G Meneghesso, UK Mishra, Y Pei, ... IEEE transactions on electron devices 58 (9), 2996-3003, 2011 | 177 | 2011 |
| An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology NE Posthuma, S You, S Stoffels, D Wellekens, H Liang, M Zhao, ... 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 94 | 2018 |
| Analysis of the gate capacitance–voltage characteristics in p-GaN/AlGaN/GaN heterostructures TL Wu, B Bakeroot, H Liang, N Posthuma, S You, N Ronchi, S Stoffels, ... IEEE Electron Device Letters 38 (12), 1696-1699, 2017 | 92 | 2017 |
| Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance NE Posthuma, S You, H Liang, N Ronchi, X Kang, D Wellekens, ... 2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016 | 86 | 2016 |
| Performance optimization of Au-free lateral AlGaN/GaN Schottky barrier diode with gated edge termination on 200-mm silicon substrate J Hu, S Stoffels, S Lenci, B Bakeroot, B De Jaeger, M Van Hove, N Ronchi, ... IEEE Transactions on Electron Devices 63 (3), 997-1004, 2016 | 81 | 2016 |
| Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With and Gate Dielectrics M Van Hove, X Kang, S Stoffels, D Wellekens, N Ronchi, R Venegas, ... IEEE transactions on electron devices 60 (10), 3071-3078, 2013 | 77 | 2013 |
| Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors M Meneghini, A Stocco, N Ronchi, F Rossi, G Salviati, G Meneghesso, ... Applied Physics Letters 97 (6), 2010 | 56 | 2010 |
| Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination J Hu, S Stoffels, S Lenci, B De Jaeger, N Ronchi, AN Tallarico, ... IEEE Transactions on Electron Devices 63 (9), 3451-3458, 2016 | 45 | 2016 |
| Correlation between DC and RF degradation due to deep levels in AlGaN/GaN HEMTs A Chini, F Fantini, V Di Lecce, M Esposto, A Stocco, N Ronchi, F Zanon, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 41 | 2009 |
| Analog in-memory computing in FeFET-based 1T1R array for edge AI applications D Saito, T Kobayashi, H Koga, N Ronchi, K Banerjee, Y Shuto, J Okuno, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 40 | 2021 |
| Impact of Charge trapping on Imprint and its Recovery in HfO2 based FeFET Y Higashi, N Ronchi, B Kaczer, K Banerjee, SRC McMitchell, ... 2019 IEEE International Electron Devices Meeting (IEDM), 15.6. 1-15.6. 4, 2019 | 36 | 2019 |
| Reliability improvements in AlGaN/GaN Schottky barrier diodes with a gated edge termination E Acurio, F Crupi, N Ronchi, B De Jaeger, B Bakeroot, S Decoutere, ... IEEE Transactions on Electron Devices 65 (5), 1765-1770, 2018 | 36 | 2018 |
| Defect profiling in FEFET Si: HfO2 layers BJ O'sullivan, V Putcha, R Izmailov, V Afanas' ev, E Simoen, T Jung, ... Applied Physics Letters 117 (20), 2020 | 28 | 2020 |
| Investigation of imprint in FE-HfO₂ and its recovery Y Higashi, B Kaczer, AS Verhulst, BJ O’Sullivan, N Ronchi, ... IEEE Transactions on Electron Devices 67 (11), 4911-4917, 2020 | 26 | 2020 |
| Physical origin of current collapse in Au-free AlGaN/GaN Schottky barrier diodes J Hu, S Stoffels, S Lenci, N Ronchi, R Venegas, S You, B Bakeroot, ... Microelectronics Reliability 54 (9-10), 2196-2199, 2014 | 22 | 2014 |
| New Insights into the Imprint Effect in FE-HfO2 and its Recovery Y Higashi, K Florent, A Subirats, B Kaczer, L Di Piazza, S Clima, N Ronchi, ... 2019 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2019 | 21 | 2019 |
| Impact of hot electrons on the reliability of AlGaN/GaN high electron mobility transistors M Meneghini, A Stocco, R Silvestri, N Ronchi, G Meneghesso, E Zanoni 2012 IEEE International Reliability Physics Symposium (IRPS), 2C. 2.1-2C. 2.5, 2012 | 21 | 2012 |
| Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: A complete model M Meneghini, A Stocco, M Bertin, N Ronchi, A Chini, D Marcon, ... 2011 International Electron Devices Meeting, 19.5. 1-19.5. 4, 2011 | 21 | 2011 |
| Ferroelectric La‐Doped ZrO2/HfxZr1−xO2 Bilayer Stacks with Enhanced Endurance M Popovici, AM Walke, K Banerjee, N Ronchi, J Meersschaut, U Celano, ... physica status solidi (RRL)–Rapid Research Letters 15 (5), 2100033, 2021 | 18 | 2021 |
| First-Principles Perspective on Poling Mechanisms and Ferroelectric/Antiferroelectric Behavior of Hf1-xZrxO2 for FEFET Applications S Clima, SRC McMitchell, K Florent, L Nyns, M Popovici, N Ronchi, ... 2018 IEEE International Electron Devices Meeting (IEDM), 16.5. 1-16.5. 4, 2018 | 18 | 2018 |
