| GaN HEMTs on Si with regrown contacts and cutoff/maximum oscillation frequencies of 250/204 GHz L Li, K Nomoto, M Pan, W Li, A Hickman, J Miller, K Lee, Z Hu, SJ Bader, ... IEEE Electron Device Letters 41 (5), 689-692, 2020 | 93 | 2020 |
| Next generation electronics on the ultrawide-bandgap aluminum nitride platform AL Hickman, R Chaudhuri, SJ Bader, K Nomoto, L Li, JCM Hwang, ... Semiconductor Science and Technology 36 (4), 044001, 2021 | 69 | 2021 |
| First RF power operation of AlN/GaN/AlN HEMTs with> 3 A/mm and 3 W/mm at 10 GHz A Hickman, R Chaudhuri, L Li, K Nomoto, SJ Bader, JCM Hwang, ... IEEE Journal of the Electron Devices Society 9, 121-124, 2020 | 54 | 2020 |
| Wafer-Scale Fabrication of Recessed-Channel PtSe2 MOSFETs With Low Contact Resistance and Improved Gate Control L Li, K Xiong, RJ Marsell, A Madjar, NC Strandwitz, JCM Hwang, ... IEEE Transactions on Electron Devices 65 (10), 4102-4108, 2018 | 39 | 2018 |
| GaN/AlN p-channel HFETs with Imax >420 mA/mm and ~20 GHz fT / fMAX K Nomoto, R Chaudhuri, SJ Bader, L Li, A Hickman, S Huang, H Lee, ... 2020 IEEE International Electron Devices Meeting (IEDM), 8.3. 1-8.3. 4, 2020 | 34 | 2020 |
| Black phosphorus high-frequency transistors with local contact bias C Li, K Xiong, L Li, Q Guo, X Chen, A Madjar, K Watanabe, T Taniguchi, ... ACS nano 14 (2), 2118-2125, 2020 | 24 | 2020 |
| CMOS-compatible batch processing of monolayer MoS2 MOSFETs K Xiong, H Kim, RJ Marstell, A Göritz, C Wipf, L Li, JH Park, X Luo, ... Journal of Physics D: Applied Physics 51 (15), 15LT02, 2018 | 23 | 2018 |
| Large-Scale Fabrication of Submicrometer-Gate-Length MOSFETs With a Trilayer PtSe2 Channel Grown by Molecular Beam Epitaxy K Xiong, M Hilse, L Li, A Göritz, M Lisker, M Wietstruck, M Kaynak, ... IEEE Transactions on Electron Devices 67 (3), 796-801, 2020 | 21 | 2020 |
| Sensitivity analysis for ultra-wideband 2-port impedance spectroscopy of a live cell X Ma, X Du, L Li, H Li, X Cheng, JCM Hwang IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology …, 2019 | 21 | 2019 |
| 15-ghz epitaxial aln fbars on sic substrates W Zhao, MJ Asadi, L Li, R Chaudhuri, K Nomoto, HG Xing, JCM Hwang, ... IEEE Electron Device Letters 44 (6), 903-906, 2023 | 19 | 2023 |
| SiC substrate-integrated waveguides for high-power monolithic integrated circuits above 110 GHz MJ Asadi, L Li, W Zhao, K Nomoto, P Fay, HG Xing, D Jena, JCM Hwang 2021 IEEE MTT-S International Microwave Symposium (IMS), 669-672, 2021 | 18 | 2021 |
| Correlation between optical fluorescence and microwave transmission during single-cell electroporation H Li, X Ma, X Du, L Li, X Cheng, JCM Hwang IEEE Transactions on Biomedical Engineering 66 (8), 2223-2230, 2018 | 17 | 2018 |
| Validation of Clausius–Mossotti function in wideband single-cell dielectrophoresis X Du, X Ma, H Li, L Li, X Cheng, JCM Hwang IEEE Journal of Electromagnetics, RF and Microwaves in medicine and Biology …, 2019 | 15 | 2019 |
| Ultra-wideband characterization, electroporation, and dielectrophoresis of a live biological cell using the same vector network analyzer X Du, X Ma, L Li, H Li, X Cheng, JCM Hwang 2018 IEEE/MTT-S International Microwave Symposium-IMS, 1148-1151, 2018 | 12 | 2018 |
| FerroHEMTs: High-current and high-speed all-epitaxial AlScN/GaN ferroelectric transistors J Casamento, K Nomoto, TS Nguyen, H Lee, C Savant, L Li, A Hickman, ... 2022 International Electron Devices Meeting (IEDM), 11.1. 1-11.1. 4, 2022 | 10 | 2022 |
| X-band epi-BAW resonators W Zhao, MJ Asadi, L Li, R Chaudhuri, K Nomoto, HG Xing, J Hwang, ... Journal of Applied Physics 132 (2), 2022 | 10 | 2022 |
| Broadband electrical sensing of a live biological cell with in situ single-connection calibration X Ma, X Du, L Li, C Ladegard, X Cheng, JCM Hwang Sensors 20 (14), 3844, 2020 | 10 | 2020 |
| Large signal response of AlN/GaN/AlN HEMTs at 30 GHz A Hickman, R Chaudhuri, N Moser, M Elliott, K Nomoto, L Li, JCM Hwang, ... 2021 Device Research Conference (DRC), 1-2, 2021 | 8 | 2021 |
| Improvement by Channel Recess of Contact Resistance and Gate Control in Large-Scale Spin-Coated MoS2 MOSFETs K Xiong, L Li, RJ Marstell, A Madjar, NC Strandwitz, JCM Hwang, Z Lin, ... IEEE Electron Device Letters 39 (9), 1453-1456, 2018 | 8 | 2018 |
| Ka-band GaAs MMIC LNA using a 0.15 um metamorphic InGaAs M Khan, U Khan, Z Peng, AR Buzdar, A Buzdar, L Li, F Lin 2016 IEEE MTT-S International Wireless Symposium (IWS), 1-4, 2016 | 8 | 2016 |
Debdeep JenaCornell University在 cornell.edu 的电子邮件经过验证
