| InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts andof 370 GHz Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, T Fang, ... IEEE Electron Device Letters 33 (7), 988-990, 2012 | 424 | 2012 |
| Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment R Yan, S Fathipour, Y Han, B Song, S Xiao, M Li, N Ma, V Protasenko, ... Nano letters 15 (9), 5791-5798, 2015 | 368 | 2015 |
| 1.9-kV AlGaN/GaN lateral Schottky barrier diodes on silicon M Zhu, B Song, M Qi, Z Hu, K Nomoto, X Yan, Y Cao, W Johnson, E Kohn, ... IEEE Electron Device Letters 36 (4), 375-377, 2015 | 200 | 2015 |
| 1.7-kV and 0.55- GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability K Nomoto, B Song, Z Hu, M Zhu, M Qi, N Kaneda, T Mishima, T Nakamura, ... IEEE Electron Device Letters 37 (2), 161-164, 2015 | 196 | 2015 |
| Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN pn diodes with avalanche breakdown Z Hu, K Nomoto, B Song, M Zhu, M Qi, M Pan, X Gao, V Protasenko, ... Applied Physics Letters 107 (24), 2015 | 194 | 2015 |
| Ultrascaled InAlN/GaN high electron mobility transistors with cutoff frequency of 400 GHz Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, B Song, ... Japanese Journal of Applied Physics 52 (8S), 08JN14, 2013 | 128 | 2013 |
| Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz ML Schuette, A Ketterson, B Song, E Beam, TM Chou, M Pilla, HQ Tserng, ... IEEE Electron Device Letters 34 (6), 741-743, 2013 | 115 | 2013 |
| Polarization-induced GaN-on-insulator E/D mode p-channel heterostructure FETs G Li, R Wang, B Song, J Verma, Y Cao, S Ganguly, A Verma, J Guo, ... IEEE electron device letters 34 (7), 852-854, 2013 | 81 | 2013 |
| GaN-on-GaN pn power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2 K Nomoto, Z Hu, B Song, M Zhu, M Qi, R Yan, V Protasenko, E Imhoff, ... 2015 IEEE international electron devices meeting (IEDM), 9.7. 1-9.7. 4, 2015 | 77 | 2015 |
| Quaternary Barrier InAlGaN HEMTs With of 230/300 GHz R Wang, G Li, G Karbasian, J Guo, B Song, Y Yue, Z Hu, O Laboutin, ... IEEE electron device letters 34 (3), 378-380, 2013 | 77 | 2013 |
| High breakdown single-crystal GaN pn diodes by molecular beam epitaxy M Qi, K Nomoto, M Zhu, Z Hu, Y Zhao, V Protasenko, B Song, X Yan, G Li, ... Applied Physics Letters 107 (23), 2015 | 68 | 2015 |
| Strained GaN quantum-well FETs on single crystal bulk AlN substrates M Qi, G Li, S Ganguly, P Zhao, X Yan, J Verma, B Song, M Zhu, K Nomoto, ... Applied Physics Letters 110 (6), 2017 | 67 | 2017 |
| Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN G Li, B Song, S Ganguly, M Zhu, R Wang, X Yan, J Verma, V Protasenko, ... Applied physics letters 104 (19), 2014 | 66 | 2014 |
| Ultralow-leakage AlGaN/GaN high electron mobility transistors on Si with non-alloyed regrown ohmic contacts B Song, M Zhu, Z Hu, M Qi, K Nomoto, X Yan, Y Cao, D Jena, HG Xing IEEE Electron Device Letters 37 (1), 16-19, 2015 | 57 | 2015 |
| High holding voltage SCR-LDMOS stacking structure with ring-resistance-triggered technique F Ma, B Zhang, Y Han, J Zheng, B Song, S Dong, H Liang IEEE Electron Device Letters 34 (9), 1178-1180, 2013 | 57 | 2013 |
| Effect of fringing capacitances on the RF performance of GaN HEMTs with T-gates B Song, B Sensale-Rodriguez, R Wang, J Guo, Z Hu, Y Yue, F Faria, ... IEEE Transactions on Electron Devices 61 (3), 747-754, 2014 | 47 | 2014 |
| Impact of CF4 plasma treatment on threshold voltage and mobility in Al2O3/InAlN/GaN MOSHEMTs Z Hu, Y Yue, M Zhu, B Song, S Ganguly, J Bergman, D Jena, HG Xing Applied Physics Express 7 (3), 031002, 2014 | 34 | 2014 |
| Monolithically integrated E/D-mode InAlN HEMTs with ƒt/ƒmax> 200/220 GHz B Song, B Sensale-Rodriguez, R Wang, A Ketterson, M Schuette, E Beam, ... 70th Device Research Conference, 1-2, 2012 | 26 | 2012 |
| Substrate-triggered GGNMOS in 65 nm CMOS process for ESD application B Song, Y Han, M Li, S Dong, W Guo, D Huang, F Ma, M Miao Electronics letters 46 (7), 518-520, 2010 | 23 | 2010 |
| Demonstration of GaN HyperFETs with ALD VO2 A Verma, B Song, D Meyer, B Downey, V Wheeler, HG Xing, D Jena 2016 74th Annual Device Research Conference (DRC), 1-2, 2016 | 21 | 2016 |
Zongyang HuElectrical and Computer Engineering, Cornell University在 cornell.edu 的电子邮件经过验证
