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Jisheng Pan
Jisheng Pan
在 gdut.edu.cn 的电子邮件经过验证
标题
引用次数
引用次数
年份
Material removal mechanism of cluster magnetorheological effect in plane polishing
J Pan, Q Yan
The International Journal of Advanced Manufacturing Technology 81, 2017-2026, 2015
592015
An experimental analysis of strontium titanate ceramic substrates polished by magnetorheological finishing with dynamic magnetic fields formed by rotating magnetic poles
J Pan, P Yu, Q Yan, W Li
Smart Materials and Structures 26 (5), 055017, 2017
422017
Material removal process of single-crystal SiC in chemical-magnetorheological compound finishing
H Liang, J Lu, J Pan, Q Yan
The International Journal of Advanced Manufacturing Technology 94, 2939-2948, 2018
412018
Research on material removal model and processing parameters of cluster magnetorheological finishing with dynamic magnetic fields
J Pan, M Guo, Q Yan, K Zheng, X Xiao
The International Journal of Advanced Manufacturing Technology 100, 2283-2297, 2019
362019
Prediction of the surface roughness and material removal rate in chemical mechanical polishing of single-crystal SiC via a back-propagation neural network
J Deng, Q Zhang, J Lu, Q Yan, J Pan, R Chen
Precision Engineering 72, 102-110, 2021
342021
The mechanism of Fenton reaction of hydrogen peroxide with single crystal 6H-SiC substrate
J Deng, J Pan, Q Zhang, Q Yan, J Lu
Surfaces and Interfaces 21, 100730, 2020
342020
Cluster magnetorheological effect plane polishing technology
潘继生, 阎秋生, 路家斌, 徐西鹏, 陈森凯
Journal of Mechanical Engineering 50 (1), 205-212, 2014
332014
Tribological behavior of 6H–SiC wafers in different chemical mechanical polishing slurries
Q Zhang, J Pan, X Zhang, J Lu, Q Yan
Wear 472, 203649, 2021
322021
Abrasive particles trajectory analysis and simulation of cluster magnetorheological effect plane polishing
J Pan, Q Yan, X Xu, J Zhu, Z Wu, Z Bai
Physics Procedia 25, 176-184, 2012
292012
Enhancement mechanism of chemical mechanical polishing for single-crystal 6H-SiC based on Electro-Fenton reaction
J Deng, J Lu, Q Yan, J Pan
Diamond and Related Materials 111, 108147, 2021
272021
Influences of processing parameters on metal-bonded diamond wheel wear when grinding a sapphire wafer
B Luo, Q Yan, J Pan, J Lu, Z Huang
Diamond and Related Materials 113, 108275, 2021
262021
Solid catalysts based on fenton reaction for SiC wafer in chemical mechanical polishing
徐少平, 路家斌, 阎秋生, 宋涛, 潘继生
Journal of Mechanical Engineering 53 (21), 167-173, 2017
202017
Machining method for controlling the behaviours of Bingham fluids in cluster magnetorheological polishing pads
B Luo, Q Yan, Z Huang, J Pan, Y Fu
Smart Materials and Structures 30 (2), 025002, 2020
192020
Experimental study of surface performance of monocrystalline 6H-SiC substrates in plane grinding with a metal-bonded diamond wheel
J Pan, X Zhang, Q Yan, S Chen
The International Journal of Advanced Manufacturing Technology 89, 619-627, 2017
192017
Optimization study on magnetorheological fluid components and process parameters of cluster magnetorheological finishing with dynamic magnetic field for sapphire substrates
J Pan, K Zheng, Q Yan, Q Zhang, J Lu
Smart Materials and Structures 29 (11), 114009, 2020
182020
Study on the rheological properties and polishing properties of SiO2@ CI composite particle for sapphire wafer
J Pan, Z Chen, Q Yan
Smart Materials and Structures 29 (11), 114003, 2020
172020
Uniformity of cluster magnetorheological finishing with dynamic magnetic fields formed by multi-magnetic rotating poles based on the cluster principle
B Luo, Q Yan, J Pan, M Guo
The International Journal of Advanced Manufacturing Technology 107, 919-934, 2020
172020
Research progress in chemical mechanical polishing of single crystal SiC substrates
D Jiayun, PAN Jisheng, Z Qixiang, GUO Xiaohui, YAN Qiusheng
金刚石与磨料磨具工程 40 (1), 79-91, 2020
162020
An ultra-smooth planarization method for controlling fluid behavior in cluster magnetorheological finishing based on computational fluid dynamics
B Luo, Q Yan, J Chai, W Song, J Pan
Precision Engineering 74, 358-368, 2022
152022
Basic research on chemical mechanical polishing of single-crystal SiC—Electro–Fenton: Reaction mechanism and modelling of hydroxyl radical generation using condition response …
J Deng, J Lu, Q Yan, J Pan
Journal of Environmental Chemical Engineering 9 (2), 104954, 2021
152021
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