Material removal mechanism of cluster magnetorheological effect in plane polishing J Pan, Q Yan The International Journal of Advanced Manufacturing Technology 81, 2017-2026, 2015 | 59 | 2015 |
An experimental analysis of strontium titanate ceramic substrates polished by magnetorheological finishing with dynamic magnetic fields formed by rotating magnetic poles J Pan, P Yu, Q Yan, W Li Smart Materials and Structures 26 (5), 055017, 2017 | 42 | 2017 |
Material removal process of single-crystal SiC in chemical-magnetorheological compound finishing H Liang, J Lu, J Pan, Q Yan The International Journal of Advanced Manufacturing Technology 94, 2939-2948, 2018 | 41 | 2018 |
Research on material removal model and processing parameters of cluster magnetorheological finishing with dynamic magnetic fields J Pan, M Guo, Q Yan, K Zheng, X Xiao The International Journal of Advanced Manufacturing Technology 100, 2283-2297, 2019 | 36 | 2019 |
Prediction of the surface roughness and material removal rate in chemical mechanical polishing of single-crystal SiC via a back-propagation neural network J Deng, Q Zhang, J Lu, Q Yan, J Pan, R Chen Precision Engineering 72, 102-110, 2021 | 34 | 2021 |
The mechanism of Fenton reaction of hydrogen peroxide with single crystal 6H-SiC substrate J Deng, J Pan, Q Zhang, Q Yan, J Lu Surfaces and Interfaces 21, 100730, 2020 | 34 | 2020 |
Cluster magnetorheological effect plane polishing technology 潘继生, 阎秋生, 路家斌, 徐西鹏, 陈森凯 Journal of Mechanical Engineering 50 (1), 205-212, 2014 | 33 | 2014 |
Tribological behavior of 6H–SiC wafers in different chemical mechanical polishing slurries Q Zhang, J Pan, X Zhang, J Lu, Q Yan Wear 472, 203649, 2021 | 32 | 2021 |
Abrasive particles trajectory analysis and simulation of cluster magnetorheological effect plane polishing J Pan, Q Yan, X Xu, J Zhu, Z Wu, Z Bai Physics Procedia 25, 176-184, 2012 | 29 | 2012 |
Enhancement mechanism of chemical mechanical polishing for single-crystal 6H-SiC based on Electro-Fenton reaction J Deng, J Lu, Q Yan, J Pan Diamond and Related Materials 111, 108147, 2021 | 27 | 2021 |
Influences of processing parameters on metal-bonded diamond wheel wear when grinding a sapphire wafer B Luo, Q Yan, J Pan, J Lu, Z Huang Diamond and Related Materials 113, 108275, 2021 | 26 | 2021 |
Solid catalysts based on fenton reaction for SiC wafer in chemical mechanical polishing 徐少平, 路家斌, 阎秋生, 宋涛, 潘继生 Journal of Mechanical Engineering 53 (21), 167-173, 2017 | 20 | 2017 |
Machining method for controlling the behaviours of Bingham fluids in cluster magnetorheological polishing pads B Luo, Q Yan, Z Huang, J Pan, Y Fu Smart Materials and Structures 30 (2), 025002, 2020 | 19 | 2020 |
Experimental study of surface performance of monocrystalline 6H-SiC substrates in plane grinding with a metal-bonded diamond wheel J Pan, X Zhang, Q Yan, S Chen The International Journal of Advanced Manufacturing Technology 89, 619-627, 2017 | 19 | 2017 |
Optimization study on magnetorheological fluid components and process parameters of cluster magnetorheological finishing with dynamic magnetic field for sapphire substrates J Pan, K Zheng, Q Yan, Q Zhang, J Lu Smart Materials and Structures 29 (11), 114009, 2020 | 18 | 2020 |
Study on the rheological properties and polishing properties of SiO2@ CI composite particle for sapphire wafer J Pan, Z Chen, Q Yan Smart Materials and Structures 29 (11), 114003, 2020 | 17 | 2020 |
Uniformity of cluster magnetorheological finishing with dynamic magnetic fields formed by multi-magnetic rotating poles based on the cluster principle B Luo, Q Yan, J Pan, M Guo The International Journal of Advanced Manufacturing Technology 107, 919-934, 2020 | 17 | 2020 |
Research progress in chemical mechanical polishing of single crystal SiC substrates D Jiayun, PAN Jisheng, Z Qixiang, GUO Xiaohui, YAN Qiusheng 金刚石与磨料磨具工程 40 (1), 79-91, 2020 | 16 | 2020 |
An ultra-smooth planarization method for controlling fluid behavior in cluster magnetorheological finishing based on computational fluid dynamics B Luo, Q Yan, J Chai, W Song, J Pan Precision Engineering 74, 358-368, 2022 | 15 | 2022 |
Basic research on chemical mechanical polishing of single-crystal SiC—Electro–Fenton: Reaction mechanism and modelling of hydroxyl radical generation using condition response … J Deng, J Lu, Q Yan, J Pan Journal of Environmental Chemical Engineering 9 (2), 104954, 2021 | 15 | 2021 |