| Analysis of threshold voltage distribution due to random dopants: A 100 000-sample 3-D simulation study D Reid, C Millar, G Roy, S Roy, A Asenov IEEE Transactions on Electron Devices 56 (10), 2255-2263, 2009 | 88 | 2009 |
| Accurate statistical description of random dopant-induced threshold voltage variability C Millar, D Reid, G Roy, S Roy, A Asenov IEEE Electron Device Letters 29 (8), 946-948, 2008 | 87 | 2008 |
| Understanding LER-Induced MOSFET Variability—Part I: Three-Dimensional Simulation of Large Statistical Samples D Reid, C Millar, S Roy, A Asenov IEEE Transactions on Electron Devices 57 (11), 2801-2807, 2010 | 57 | 2010 |
| Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review L Gerrer, J Ding, SM Amoroso, F Adamu-Lema, R Hussin, D Reid, C Millar, ... Microelectronics Reliability 54 (4), 682-697, 2014 | 49 | 2014 |
| Advanced simulation of statistical variability and reliability in nano CMOS transistors A Asenov, S Roy, RA Brown, G Roy, C Alexander, C Riddet, C Millar, ... 2008 IEEE International Electron Devices Meeting, 1-1, 2008 | 49 | 2008 |
| FinFET centric variability-aware compact model extraction and generation technology supporting DTCO X Wang, B Cheng, D Reid, A Pender, P Asenov, C Millar, A Asenov IEEE Transactions on Electron Devices 62 (10), 3139-3146, 2015 | 33 | 2015 |
| Simulation study of the impact of quantum confinement on the electrostatically driven performance of n-type nanowire transistors Y Wang, T Al-Ameri, X Wang, VP Georgiev, E Towie, SM Amoroso, ... IEEE Transactions on Electron Devices 62 (10), 3229-3236, 2015 | 26 | 2015 |
| Experimental implementation of optimal WLAN channel selection without communication D Malone, P Clifford, D Reid, DJ Leith 2007 2nd IEEE International Symposium on New Frontiers in Dynamic Spectrum …, 2007 | 26 | 2007 |
| Accurate simulation of transistor-level variability for the purposes of TCAD-based device-technology cooptimization L Gerrer, AR Brown, C Millar, R Hussin, SM Amoroso, B Cheng, D Reid, ... IEEE Transactions on Electron Devices 62 (6), 1739-1745, 2015 | 25 | 2015 |
| Simulation based transistor-SRAM co-design in the presence of statistical variability and reliability A Asenov, B Cheng, X Wang, AR Brown, D Reid, C Millar, C Alexander 2013 IEEE International Electron Devices Meeting, 33.1. 1-33.1. 4, 2013 | 25 | 2013 |
| Interplay between statistical reliability and variability: A comprehensive transistor-to-circuit simulation technology L Gerrer, SM Amoroso, P Asenov, J Ding, B Cheng, F Adamu-Lema, ... 2013 IEEE International Reliability Physics Symposium (IRPS), 3A. 2.1-3A. 2.5, 2013 | 22 | 2013 |
| Understanding LER-Induced MOSFETVariability—Part II: Reconstructing the Distribution D Reid, C Millar, S Roy, A Asenov IEEE transactions on electron devices 57 (11), 2808-2813, 2010 | 21 | 2010 |
| Modelling circuit performance variations due to statistical variability: Monte Carlo static timing analysis M Merrett, P Asenov, Y Wang, M Zwolinski, D Reid, C Millar, S Roy, Z Liu, ... 2011 Design, Automation & Test in Europe, 1-4, 2011 | 20 | 2011 |
| The evolution of standard cell libraries for future technology nodes JA Walker, JA Hilder, D Reid, A Asenov, S Roy, C Millar, AM Tyrrell Genetic Programming and Evolvable Machines 12, 235-256, 2011 | 19 | 2011 |
| Understanding LER-induced statistical variability: A 35,000 sample 3D simulation study D Reid, C Millar, G Roy, S Roy, A Asenov 2009 Proceedings of the European Solid State Device Research Conference, 423-426, 2009 | 19 | 2009 |
| Hot carrier aging and its variation under use-bias: Kinetics, prediction, impact on Vdd and SRAM M Duan, JF Zhang, A Manut, Z Ji, W Zhang, A Asenov, L Gerrer, D Reid, ... 2015 IEEE International Electron Devices Meeting (IEDM), 20.4. 1-20.4. 4, 2015 | 18 | 2015 |
| Mathematical Modelling of Polyamine Metabolism in Bloodstream-Form Trypanosoma brucei: An Application to Drug Target Identification X Gu, D Reid, DJ Higham, D Gilbert PLoS One 8 (1), e53734, 2013 | 17 | 2013 |
| Combining process and statistical variability in the evaluation of the effectiveness of corners in digital circuit parametric yield analysis P Asenov, NA Kamsani, D Reid, C Millar, S Roy, A Asenov 2010 Proceedings of the European Solid State Device Research Conference, 130-133, 2010 | 16 | 2010 |
| Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET U Kovac, D Reid, C Millar, G Roy, S Roy, A Asenov Microelectronics Reliability 48 (8-9), 1572-1575, 2008 | 16 | 2008 |
| Lecture capture: Early lessons learned and experiences shared CJ Andrews, RC Brown, CKW Harrison, D Reid, PL Roach New Directions in the Teaching of Natural Sciences, 56-60, 2010 | 15 | 2010 |
