| The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ... Journal of Physics D: Applied Physics 51 (16), 163001, 2018 | 1108 | 2018 |
| GaN-on-Si vertical Schottky and pn diodes Y Zhang, M Sun, D Piedra, M Azize, X Zhang, T Fujishima, T Palacios IEEE electron device letters 35 (6), 618-620, 2014 | 203 | 2014 |
| Electrothermal simulation and thermal performance study of GaN vertical and lateral power transistors Y Zhang, M Sun, Z Liu, D Piedra, HS Lee, F Gao, T Fujishima, T Palacios IEEE transactions on electron devices 60 (7), 2224-2230, 2013 | 191 | 2013 |
| Vertical GaN junction barrier Schottky rectifiers by selective ion implantation Y Zhang, Z Liu, MJ Tadjer, M Sun, D Piedra, C Hatem, TJ Anderson, ... IEEE Electron Device Letters 38 (8), 1097-1100, 2017 | 168 | 2017 |
| Origin and control of OFF-state leakage current in GaN-on-Si vertical diodes Y Zhang, M Sun, HY Wong, Y Lin, P Srivastava, C Hatem, M Azize, ... IEEE Transactions on Electron Devices 62 (7), 2155-2161, 2015 | 157 | 2015 |
| 3000-V 4.3- InAlN/GaN MOSHEMTs With AlGaN Back Barrier HS Lee, D Piedra, M Sun, X Gao, S Guo, T Palacios IEEE electron device letters 33 (7), 982-984, 2012 | 154 | 2012 |
| Materials and processing issues in vertical GaN power electronics J Hu, Y Zhang, M Sun, D Piedra, N Chowdhury, T Palacios Materials Science in Semiconductor Processing 78, 75-84, 2018 | 151 | 2018 |
| Large-area 1.2-kV GaN vertical power FinFETs with a record switching figure of merit Y Zhang, M Sun, J Perozek, Z Liu, A Zubair, D Piedra, N Chowdhury, ... IEEE Electron Device Letters 40 (1), 75-78, 2018 | 143 | 2018 |
| 1200 V GaN vertical fin power field-effect transistors Y Zhang, M Sun, D Piedra, J Hu, Z Liu, Y Lin, X Gao, K Shepard, ... 2017 IEEE International Electron Devices Meeting (IEDM), 9.2. 1-9.2. 4, 2017 | 111 | 2017 |
| Trench formation and corner rounding in vertical GaN power devices Y Zhang, M Sun, Z Liu, D Piedra, J Hu, X Gao, T Palacios Applied Physics Letters 110 (19), 2017 | 108 | 2017 |
| A technology overview of the powerchip development program M Araghchini, J Chen, V Doan-Nguyen, DV Harburg, D Jin, J Kim, MS Kim, ... IEEE Transactions on Power Electronics 28 (9), 4182-4201, 2013 | 93 | 2013 |
| High-performance 500 V quasi-and fully-vertical GaN-on-Si pn diodes Y Zhang, D Piedra, M Sun, J Hennig, A Dadgar, L Yu, T Palacios IEEE Electron Device Letters 38 (2), 248-251, 2016 | 84 | 2016 |
| Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings Y Zhang, M Sun, Z Liu, D Piedra, M Pan, X Gao, Y Lin, A Zubair, L Yu, ... 2016 IEEE International Electron Devices Meeting (IEDM), 10.2. 1-10.2. 4, 2016 | 72 | 2016 |
| Large signal linearity enhancement of AlGaN/GaN high electron mobility transistors by device-level Vtengineering for transconductance compensation S Joglekar, U Radhakrishna, D Piedra, D Antoniadis, T Palacios 2017 IEEE International Electron Devices Meeting (IEDM), 25.3. 1-25.3. 4, 2017 | 62 | 2017 |
| AlN metal–semiconductor field-effect transistors using Si-ion implantation H Okumura, S Suihkonen, J Lemettinen, A Uedono, Y Zhang, D Piedra, ... Japanese Journal of Applied Physics 57 (4S), 04FR11, 2018 | 58 | 2018 |
| Comparative breakdown study of mesa-and ion-implantation-isolated AlGaN/GaN high-electron-mobility transistors on Si substrate M Sun, HS Lee, B Lu, D Piedra, T Palacios Applied physics express 5 (7), 074202, 2012 | 52 | 2012 |
| Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment T Fujishima, S Joglekar, D Piedra, HS Lee, Y Zhang, A Uedono, ... Applied Physics Letters 103 (8), 2013 | 51 | 2013 |
| Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes Y Zhang, M Sun, D Piedra, J Hennig, A Dadgar, T Palacios Applied Physics Letters 111 (16), 2017 | 42 | 2017 |
| Hybrid CMOS/GaN 40-MHz maximum 20-V input DC–DC multiphase buck converter E Aklimi, D Piedra, K Tien, T Palacios, KL Shepard IEEE Journal of Solid-State Circuits 52 (6), 1618-1627, 2017 | 38 | 2017 |
| High voltage GaN HEMT compact model: Experimental verification, field plate optimization and charge trapping U Radhakrishna, D Piedra, Y Zhang, T Palacios, D Antoniadis 2013 IEEE International Electron Devices Meeting, 32.7. 1-32.7. 4, 2013 | 34 | 2013 |
