Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 591 | 2019 |
Energy Dissipation in Monolayer MoS2 Electronics E Yalon, CJ McClellan, KKH Smithe, M Muñoz Rojo, RL Xu, ... Nano letters 17 (6), 3429-3433, 2017 | 229 | 2017 |
Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS2 by Raman Thermometry E Yalon, B Aslan, KKH Smithe, CJ McClellan, SV Suryavanshi, F Xiong, ... ACS applied materials & interfaces 9 (49), 43013-43020, 2017 | 176 | 2017 |
High Current Density in Monolayer MoS2 Doped by AlOx CJ McClellan, E Yalon, KKH Smithe, SV Suryavanshi, E Pop ACS nano 15 (1), 1587-1596, 2021 | 168 | 2021 |
Rapid Flame Synthesis of Atomically Thin MoO3 down to Monolayer Thickness for Effective Hole Doping of WSe2 L Cai, CJ McClellan, AL Koh, H Li, E Yalon, E Pop, X Zheng Nano letters 17 (6), 3854-3861, 2017 | 162 | 2017 |
Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials S Vaziri, E Yalon, M Muñoz Rojo, SV Suryavanshi, H Zhang, ... Science advances 5 (8), eaax1325, 2019 | 128 | 2019 |
Uncovering the Effects of Metal Contacts on Monolayer MoS2 K Schauble, D Zakhidov, E Yalon, S Deshmukh, RW Grady, KA Cooley, ... ACS nano 14 (11), 14798-14808, 2020 | 107 | 2020 |
Engineering field effect transistors with 2D semiconducting channels: Status and prospects X Jing, Y Illarionov, E Yalon, P Zhou, T Grasser, Y Shi, M Lanza Advanced Functional Materials 30 (18), 1901971, 2020 | 85 | 2020 |
Nanoscale Heterogeneities in Monolayer MoSe2 Revealed by Correlated Scanning Probe Microscopy and Tip-Enhanced Raman Spectroscopy KKH Smithe, AV Krayev, CS Bailey, HR Lee, E Yalon, B Aslan, ... ACS Applied Nano Materials 1 (2), 572-579, 2017 | 68 | 2017 |
Spatially resolved thermometry of resistive memory devices E Yalon, S Deshmukh, M Muñoz Rojo, F Lian, CM Neumann, F Xiong, ... Scientific reports 7 (1), 15360, 2017 | 67 | 2017 |
Effective n-type doping of monolayer MoS2 by AlOx CJ McClellan, E Yalon, KKH Smithe, SV Suryavanshi, E Pop 2017 75th annual device research conference (DRC), 1-2, 2017 | 58 | 2017 |
Localized Heating and Switching in MoTe2-Based Resistive Memory Devices IM Datye, MM Rojo, E Yalon, S Deshmukh, MJ Mleczko, E Pop Nano letters 20 (2), 1461-1467, 2020 | 53 | 2020 |
Detection of the insulating gap and conductive filament growth direction in resistive memories E Yalon, I Karpov, V Karpov, I Riess, D Kalaev, D Ritter Nanoscale 7 (37), 15434-15441, 2015 | 50 | 2015 |
Radiofrequency switches based on emerging resistive memory technologies-a survey N Wainstein, G Adam, E Yalon, S Kvatinsky Proceedings of the IEEE 109 (1), 77-95, 2020 | 49 | 2020 |
Engineering thermal and electrical interface properties of phase change memory with monolayer MoS2 CM Neumann, KL Okabe, E Yalon, RW Grady, HSP Wong, E Pop Applied Physics Letters 114 (8), 2019 | 47 | 2019 |
Thermometry of filamentary RRAM devices E Yalon, AA Sharma, M Skowronski, JA Bain, D Ritter, IV Karpov IEEE Transactions on Electron Devices 62 (9), 2972-2977, 2015 | 46 | 2015 |
Understanding the switching mechanism of interfacial phase change memory KL Okabe, A Sood, E Yalon, CM Neumann, M Asheghi, E Pop, ... Journal of Applied Physics 125 (18), 2019 | 44 | 2019 |
Monolayer molybdenum disulfide switches for 6G communication systems M Kim, G Ducournau, S Skrzypczak, SJ Yang, P Szriftgiser, N Wainstein, ... Nature Electronics 5 (6), 367-373, 2022 | 43 | 2022 |
Towards ultimate scaling limits of phase-change memory F Xiong, E Yalon, A Behnam, CM Neumann, KL Grosse, S Deshmukh, ... 2016 IEEE International Electron Devices Meeting (IEDM), 4.1. 1-4.1. 4, 2016 | 43 | 2016 |
Resistive Switching inProbed by a Metal–Insulator–Semiconductor Bipolar Transistor E Yalon, A Gavrilov, S Cohen, D Mistele, B Meyler, J Salzman, D Ritter IEEE electron device letters 33 (1), 11-13, 2011 | 43 | 2011 |