关注
HOCHUL LEE, Ph.D.
HOCHUL LEE, Ph.D.
Qualcomm, Staff Engineer
在 g.ucla.edu 的电子邮件经过验证
标题
引用次数
引用次数
年份
Electric-field-controlled magnetoelectric RAM: Progress, challenges, and scaling
PK Amiri, JG Alzate, XQ Cai, F Ebrahimi, Q Hu, K Wong, C Grèzes, H Lee, ...
IEEE Transactions on Magnetics 51 (11), 1-7, 2015
1802015
Comparative evaluation of spin-transfer-torque and magnetoelectric random access memory
S Wang, H Lee, F Ebrahimi, PK Amiri, KL Wang, P Gupta
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 6 (2 …, 2016
1162016
Magnetoelectric random access memory-based circuit design by using voltage-controlled magnetic anisotropy in magnetic tunnel junctions
KL Wang, H Lee, PK Amiri
IEEE Transactions on Nanotechnology 14 (6), 992-997, 2015
672015
Design of a fast and low-power sense amplifier and writing circuit for high-speed MRAM
H Lee, JG Alzate, R Dorrance, XQ Cai, D Marković, PK Amiri
IEEE Transactions on Magnetics 51 (5), 1-7, 2014
612014
Write error rate and read disturbance in electric-field-controlled magnetic random-access memory
C Grezes, H Lee, A Lee, S Wang, F Ebrahimi, X Li, K Wong, JA Katine, ...
IEEE Magnetics Letters 8, 1-5, 2016
582016
A ReRAM-based nonvolatile flip-flop with self-write-termination scheme for frequent-OFF fast-wake-up nonvolatile processors
A Lee, CP Lo, CC Lin, WH Chen, KH Hsu, Z Wang, F Su, Z Yuan, Q Wei, ...
IEEE Journal of Solid-State Circuits 52 (8), 2194-2207, 2017
552017
Design of high-throughput and low-power true random number generator utilizing perpendicularly magnetized voltage-controlled magnetic tunnel junction
H Lee, F Ebrahimi, PK Amiri, KL Wang
AIP Advances 7 (5), 2017
542017
Fast and low-power sense amplifier and writing circuit for high-speed MRAM
KL Wang, PK Amiri, H Lee, JG Alzate
US Patent 9,672,886, 2017
342017
Analysis and compact modeling of magnetic tunnel junctions utilizing voltage-controlled magnetic anisotropy
H Lee, A Lee, S Wang, F Ebrahimi, P Gupta, PK Amiri, KL Wang
IEEE Transactions on Magnetics 54 (4), 1-9, 2018
322018
Low-power, high-density spintronic programmable logic with voltage-gated spin Hall effect in magnetic tunnel junctions
H Lee, F Ebrahimi, PK Amiri, KL Wang
IEEE Magnetics Letters 7, 1-5, 2016
312016
Accurate extraction of the trap depth from RTS noise data by including poly depletion effect and surface potential variation in MOSFETs
H Lee, Y Yoon, S Cho, H Shin
IEICE transactions on electronics 90 (5), 968-972, 2007
282007
Low RA magnetic tunnel junction arrays in conjunction with low switching current and high breakdown voltage for STT-MRAM at 10 nm and beyond
C Park, H Lee, C Ching, J Ahn, R Wang, M Pakala, SH Kang
2018 IEEE Symposium on VLSI Technology, 185-186, 2018
212018
A word line pulse circuit technique for reliable magnetoelectric random access memory
H Lee, A Lee, S Wang, F Ebrahimi, P Gupta, PK Amiri, KL Wang
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 25 (7 …, 2017
212017
A spintronic voltage-controlled stochastic oscillator for event-driven random sampling
H Lee, C Grezes, A Lee, F Ebrahimi, PK Amiri, KL Wang
IEEE Electron Device Letters 38 (2), 281-284, 2016
212016
Analog to stochastic bit stream converter utilizing voltage-assisted spin Hall effect
H Lee, A Lee, F Ebrahimi, PK Amiri, KL Wang
IEEE Electron Device Letters 38 (9), 1343-1346, 2017
192017
MTJ variation monitor-assisted adaptive MRAM write
S Wang, H Lee, C Grezes, P Khalili, KL Wang, P Gupta
Proceedings of the 53rd Annual Design Automation Conference, 1-6, 2016
172016
Simultaneous extraction of locations and energies of two independent traps in gate oxide from four-level random telegraph signal noise
S Yang, H Lee, H Shin
Japanese journal of applied physics 47 (4S), 2606, 2008
172008
Differential spin orbit torque magnetic random access memory (SOT-MRAM) cell structure and array
H Lee, C Park, SH Kang
US Patent 10,483,457, 2019
162019
Source line sensing in magneto-electric random-access memory to reduce read disturbance and improve sensing margin
H Lee, C Grezes, S Wang, F Ebrahimi, P Gupta, PK Amiri, KL Wang
IEEE Magnetics Letters 7, 1-5, 2016
152016
Array-level analysis of magneto-electric random-access memory for high-performance embedded applications
H Lee, A Lee, F Ebrahimi, PK Amiri, KL Wang
IEEE Magnetics Letters 8, 1-5, 2017
142017
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