A 32 kb 10T sub-threshold SRAM array with bit-interleaving and differential read scheme in 90 nm CMOS IJ Chang, JJ Kim, SP Park, K Roy IEEE Journal of Solid-State Circuits 44 (2), 650-658, 2009 | 665 | 2009 |
Sense-amp based adder with source follower evaluation tree JJ Kim, CTK Chuang, RV Joshi, K Roy US Patent 6,789,099, 2004 | 386 | 2004 |
Double gate-MOSFET subthreshold circuit for ultralow power applications JJ Kim, K Roy IEEE Transactions on Electron Devices 51 (9), 1468-1474, 2004 | 165 | 2004 |
A forward body-biased low-leakage SRAM cache: device, circuit and architecture considerations CH Kim, JJ Kim, S Mukhopadhyay, K Roy IEEE Transactions on Very Large Scale Integration (VLSI) Systems 13 (3), 349-357, 2005 | 138 | 2005 |
Back-gate controlled read SRAM cell JJ Kim, K Kim US Patent 7,177,177, 2007 | 108 | 2007 |
Impacts of NBTI and PBTI on SRAM static/dynamic noise margins and cell failure probability A Bansal, R Rao, JJ Kim, S Zafar, JH Stathis, CT Chuang Microelectronics reliability 49 (6), 642-649, 2009 | 101 | 2009 |
Negative Transconductance Heterojunction Organic Transistors and their Application to Full-Swing Ternary Circuits H Yoo, S On, SB Lee, K Cho, JJ Kim Advanced Materials, 2019 | 97 | 2019 |
Area-efficient and variation-tolerant in-memory BNN computing using 6T SRAM array J Kim, J Koo, T Kim, Y Kim, H Kim, S Yoo, JJ Kim 2019 Symposium on VLSI Circuits, C118-C119, 2019 | 88 | 2019 |
SRAM write-ability improvement with transient negative bit-line voltage S Mukhopadhyay, RM Rao, JJ Kim, CT Chuang IEEE Transactions on Very Large Scale Integration (VLSI) Systems 19 (1), 24-32, 2009 | 84 | 2009 |
Monolithically integrated RRAM-and CMOS-based in-memory computing optimizations for efficient deep learning S Yin, Y Kim, X Han, H Barnaby, S Yu, Y Luo, W He, X Sun, JJ Kim, J Seo IEEE Micro 39 (6), 54-63, 2019 | 83 | 2019 |
High-performance SRAM in nanoscale CMOS: Design challenges and techniques CT Chuang, S Mukhopadhyay, JJ Kim, K Kim, R Rao 2007 IEEE international workshop on memory technology, design and testing, 4-12, 2007 | 83 | 2007 |
A forward body-biased low-leakage SRAM cache: device and architecture considerations CH Kim, JJ Kim, S Mukhopadhyay, K Roy Proceedings of the 2003 international symposium on Low power electronics and …, 2003 | 79 | 2003 |
BitBlade: Area and Energy-Efficient Precision-Scalable Neural Network Accelerator with Bitwise Summation S Ryu, H Kim, W Yi, JJ Kim Proceedings of the 56th Annual Design Automation Conference (DAC), 2019 | 77 | 2019 |
8.2 8Mb/s 28Mb/mJ robust true-random-number generator in 65nm CMOS based on differential ring oscillator with feedback resistors E Kim, M Lee, JJ Kim 2017 IEEE International Solid-State Circuits Conference (ISSCC), 144-145, 2017 | 75 | 2017 |
Improved synapse device with MLC and conductance linearity using quantized conduction for neuromorphic systems S Lim, C Sung, H Kim, T Kim, J Song, JJ Kim, H Hwang IEEE Electron Device Letters 39 (2), 312-315, 2018 | 72 | 2018 |
PVT-aware leakage reduction for on-die caches with improved read stability CH Kim, JJ Kim, IJ Chang, K Roy IEEE Journal of Solid-State Circuits 41 (1), 170-178, 2005 | 63 | 2005 |
Binaryduo: Reducing gradient mismatch in binary activation network by coupling binary activations H Kim, K Kim, J Kim, JJ Kim arXiv preprint arXiv:2002.06517, 2020 | 54 | 2020 |
2-bit-per-cell RRAM-based in-memory computing for area-/energy-efficient deep learning W He, S Yin, Y Kim, X Sun, JJ Kim, S Yu, JS Seo IEEE Solid-State Circuits Letters 3, 194-197, 2020 | 50 | 2020 |
Input voltage mapping optimized for resistive memory-based deep neural network hardware T Kim, H Kim, J Kim, JJ Kim IEEE Electron Device Letters 38 (9), 1228-1231, 2017 | 49 | 2017 |
Impact of NBTI and PBTI in SRAM bit-cells: Relative sensitivities and guidelines for application-specific target stability/performance A Bansal, R Rao, JJ Kim, S Zafar, JH Stathis, CT Chuang 2009 IEEE International Reliability Physics Symposium, 745-749, 2009 | 49 | 2009 |