| Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth NN Ledentsov, VA Shchukin, M Grundmann, N Kirstaedter, J Böhrer, ... Physical Review B 54 (12), 8743, 1996 | 660 | 1996 |
| Negative characteristic temperature of InGaAs quantum dot injection laser AE Zhukov, VM Ustinov, AY Egorov, AR Kovsh, AF Tsatsul, NN Ledentsov, ... Japanese journal of applied physics 36 (6S), 4216, 1997 | 112 | 1997 |
| Low-threshold injection lasers based on vertically coupled quantum dots VM Ustinov, AY Egorov, AR Kovsh, AE Zhukov, MV Maximov, ... Journal of crystal growth 175, 689-695, 1997 | 101 | 1997 |
| InGaAs/GaAs quantum dot lasers with ultrahigh characteristic temperature MV Maximov, IV Kochnev, YM Shernyakov, SV Zaitsev, NY Gordeev, ... Jpn. J. Appl. Phys 36, 4221-4223, 1997 | 85 | 1997 |
| Low threshold quantum dot injection laser emitting at 1.9 µm VM Ustinov, AE Zhukov, AY Egorov, AR Kovsh, SV Zaitsev, NY Gordeev, ... Electronics letters 34 (7), 670-672, 1998 | 79 | 1998 |
| Light emitting devices based on quantum well-dots MV Maximov, AM Nadtochiy, SA Mintairov, NA Kalyuzhnyy, ... Applied Sciences 10 (3), 1038, 2020 | 61 | 2020 |
| High-power single mode (> 1W) continuous wave operation of longitudinal photonic band crystal lasers with a narrow vertical beam divergence II Novikov, NY Gordeev, YM Shernyakov, YY Kiselev, MV Maximov, ... Applied Physics Letters 92 (10), 2008 | 58 | 2008 |
| A low-threshold injection heterojunction laser based on quantum dots, produced by gas-phase epitaxy from organometallic compounds ZI Alferov, NY Gordeev, SV Zaitsev, PS Kop'ev, IV Kochnev, VV Komin, ... Semiconductors 30 (2), 197-200, 1996 | 56 | 1996 |
| Transverse single-mode edge-emitting lasers based on coupled waveguides NY Gordeev, AS Payusov, YM Shernyakov, SA Mintairov, NA Kalyuzhnyy, ... Optics Letters 40 (9), 2150-2152, 2015 | 55 | 2015 |
| A 1.33 µm InAs/GaAs quantum dot laser with a 46 cm− 1 modal gain MV Maximov, VM Ustinov, AE Zhukov, NV Kryzhanovskaya, AS Payusov, ... Semiconductor science and technology 23 (10), 105004, 2008 | 54 | 2008 |
| Metamorphic 1.5 µm-range quantum dot lasers on a GaAs substrate LY Karachinsky, T Kettler, II Novikov, YM Shernyakov, NY Gordeev, ... Semiconductor science and technology 21 (5), 691, 2006 | 47 | 2006 |
| Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates LY Karachinsky, S Pellegrini, GS Buller, AS Shkolnik, NY Gordeev, ... Applied physics letters 84 (1), 7-9, 2004 | 47 | 2004 |
| Injection lasers based on InGaAs quantum dots in an AlGaAs matrix AE Zhukov, VM Ustinov, AY Egorov, AR Kovsh, AF Tsatsul’nikov, ... Journal of electronic materials 27, 106-109, 1998 | 43 | 1998 |
| High-power low-beam divergence edge-emitting semiconductor lasers with 1-and 2-D photonic bandgap crystal waveguide MV Maximov, YM Shernyakov, II Novikov, LY Karachinsky, NY Gordeev, ... IEEE Journal of Selected Topics in Quantum Electronics 14 (4), 1113-1122, 2008 | 41 | 2008 |
| High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence MV Maximov, YM Shernyakov, II Novikov, SM Kuznetsov, LY Karachinsky, ... IEEE journal of quantum electronics 41 (11), 1341-1348, 2005 | 41 | 2005 |
| High-power singlemode CW operation of 1.5 µm-range quantum dot GaAs-based laser LY Karachinsky, T Kettler, NY Gordeev, II Novikov, MV Maximov, ... Electronics Letters 41 (8), 1, 2005 | 41 | 2005 |
| Effect of p-doping of the active region on the temperature stability of InAs/GaAs QD lasers II Novikov, NY Gordeev, LY Karachinskii, MV Maksimov, YM Shernyakov, ... Semiconductors 39, 477-480, 2005 | 40 | 2005 |
| High-power high-brightness semiconductor lasers based on novel waveguide concepts D Bimberg, K Posilovic, V Kalosha, T Kettler, D Seidlitz, VA Shchukin, ... Novel In-Plane Semiconductor Lasers IX 7616, 321-334, 2010 | 39 | 2010 |
| Tilted wave lasers: A way to high brightness sources of light V Shchukin, N Ledentsov, K Posilovic, V Kalosha, T Kettler, D Seidlitz, ... IEEE Journal of Quantum Electronics 47 (7), 1014-1027, 2011 | 33 | 2011 |
| Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 C MV Maksimov, NY Gordeev, SV Zaitsev, PS Kop’ev, IV Kochnev, ... Semiconductors 31, 124-126, 1997 | 33 | 1997 |
