| Defect reduction of SiNx embedded m-plane GaN grown by hydride vapor phase epitaxy S Woo, M Kim, B So, G Yoo, J Jang, K Lee, O Nam Journal of crystal growth 407, 6-10, 2014 | 11 | 2014 |
| Effect of nitridation on the orientation of GaN layer grown on m-sapphire substrates using hydride vapor phase epitaxy Y Won, B So, S Woo, D Lee, M Kim, K Nam, S Im, KB Shim, O Nam Journal of Ceramic Processing Research 15 (2), 61-65, 2014 | 11 | 2014 |
| Novel in situ self-separation of a 2 in. free-standing m-plane GaN wafer from an m-plane sapphire substrate by HCl chemical reaction etching in hydride vapor-phase epitaxy S Woo, S Lee, U Choi, H Lee, M Kim, J Han, O Nam CrystEngComm 18 (40), 7690-7695, 2016 | 5 | 2016 |
| Growth of Semipolar InGaN Quantum Well Structure Using Self-Organized Nano-Masks on m-Sapphire Y Ryu, J Jeong, J Jang, K Lee, D Min, J Kim, M Kim, S Moon, G Yoo, ... Journal of Nanoscience and Nanotechnology 13 (9), 6429-6433, 2013 | 5 | 2013 |
| On/off-state noise characteristics in AlGaN/GaN HFET with AlN buffer layer KS Im, U Choi, M Kim, J Choi, HS Kim, HY Cha, SJ An, O Nam Applied Physics Letters 120 (1), 2022 | 4 | 2022 |
| Microstructural gradational properties of Sn-doped gallium oxide heteroepitaxial layers grown using mist chemical vapor deposition KH Kim, MT Ha, H Lee, M Kim, O Nam, YJ Shin, SM Jeong, SY Bae Materials 15 (3), 1050, 2022 | 3 | 2022 |
| Void containing AlN layer grown on AlN nanorods fabricated by polarity selective epitaxy and etching method B So, J Lee, C Cheon, J Lee, U Choi, M Kim, J Song, J Chang, O Nam AIP Advances 11 (4), 2021 | 3 | 2021 |
| Properties of Si doped (11-20) a-plane GaN grown with different buffer layers C Jung, J Hwang, G Yoo, D Min, Y Ryu, S Moon, M Kim, O Nam, K Shim Journal of Ceramic Processing Research 15 (2), 2014 | 3 | 2014 |
| Growth of self-assembled nanovoids embedded AlN layer on a low-temperature buffer by metal organic chemical vapor deposition M Kim, U Choi, K Kim, O Nam Thin Solid Films 752, 139261, 2022 | 2 | 2022 |
| Defect reduction in m-plane GaN on m-sapphire via lateral epitaxial overgrowth by hydride vapor phase epitaxy M Kim, S Woo, B So, KB Shim, O Nam Journal of Ceramic Processing Research 17 (10), 1015-1018, 2016 | 2 | 2016 |
| Size‐Dependent Characteristics of InGaN‐Based Blue and Green Micro‐Light‐Emitting Diodes S Mohan, J Jeong, M Kim, Y Heo, J Park, J Lee, J Kim, J Heo, O Nam physica status solidi (a), 2300642, 2024 | 1 | 2024 |
| Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistors with AlN Buffer on SiC Substrate at 3.5 GHz M Kim, U Choi, K Kim, Y Heo, K Lee, S Lee, O Nam physica status solidi (a) 220 (16), 2200826, 2023 | 1 | 2023 |
| Effects of Si-doped GaN insert layer in AlGaN/GaN/GaN: Si/AlN DH-HEMT structure D Jung, M Kim, U Choi, K Kim, O Nam Solid-State Electronics 199, 108482, 2023 | 1 | 2023 |
| METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR AND NITRIDE SEMICONDUCTOR THIN FILM PREPARED USING THE SAMECONDUCTOR OH Nam, MH Kim, U Choi US Patent App. 18/379,107, 2024 | | 2024 |
| METHOD OF MANUFACTURING NITROGEN-FACE NITRIDE SEMICONDUCTOR AND NITROGEN-FACE NITRIDE SEMICONDUCTOR DEVICE MANUFACTURED USING THE SAMECONDUCTOR OH Nam, MH Kim, U Choi US Patent App. 20,240/153,766, 2024 | | 2024 |
| Device and Noise Performances of AlGaN/GaN High Electron Mobility Transistors with Various GaN Channel Layers Grown on AlN Buffer Layer KS Im, M Kim, O Nam physica status solidi (a), 2400014, 2024 | | 2024 |
| Vertical GaN PIN Structure with Intrinsic AlGaN Drift Layer Grown Using Metal‐Organic Chemical Vapor Deposition Y Heo, J Jeong, S Mohan, M Kim, J Park, J Lee, O Nam physica status solidi (a), 2400058, 2024 | | 2024 |
| Far-UVC emission of polarity-engineered AlGaN MQW using carbon nanotube-based cold cathode electron beam U Choi, ST Yoo, M Kim, B So, C Cheon, M Yang, M Lee, KC Park, O Nam Applied Physics Letters 122 (9), 2023 | | 2023 |
| Effects of NH3 pre-treatment time on nitrogen-polar GaN grown on carbon-face 4H-SiC using high-temperature metal-organic chemical vapor deposition M Kim, U Choi, K Lee, D Jung, T Kwak, B So, KR Ku, O Nam Journal of Ceramic Processing Research 21 (5), 579-585, 2020 | | 2020 |
| Improvement of crystal quality in semipolar GaN layer by using self-organized nanomasks on m-sapphire Y Ryu, J Jeong, J Jang, K Lee, D Min, J Kim, M Kim, S Moon, G Yoo, ... Journal of Ceramic Processing Research 14 (4), 587-590, 2013 | | 2013 |
Okhyun NamTU KOREA (Tech University of Korea)在 tukorea.ac.kr 的电子邮件经过验证
Okhyun NamTU KOREA (Tech University of Korea)在 tukorea.ac.kr 的电子邮件经过验证
Uiho ChoiEcole Polytechnique Fédérale de Lausanne (EPFL)在 epfl.ch 的电子邮件经过验证
Byeongchan SoLund University在 ftf.lth.se 的电子邮件经过验证