| Saturation and scaling of epitaxial island densities C Ratsch, A Zangwill, P Šmilauer, DD Vvedensky Physical review letters 72 (20), 3194, 1994 | 400 | 1994 |
| Origin of reflection high-energy electron-diffraction intensity oscillations during molecular-beam epitaxy: A computational modeling approach S Clarke, DD Vvedensky Physical review letters 58 (21), 2235, 1987 | 393 | 1987 |
| Growth of epitaxial graphene: Theory and experiment H Tetlow, JP De Boer, IJ Ford, DD Vvedensky, J Coraux, L Kantorovich Physics reports 542 (3), 195-295, 2014 | 336 | 2014 |
| Step-density variations and reflection high-energy electron-diffraction intensity oscillations during epitaxial growth on vicinal GaAs (001) T Shitara, DD Vvedensky, MR Wilby, J Zhang, JH Neave, BA Joyce Physical Review B 46 (11), 6815, 1992 | 315 | 1992 |
| Stochastic equations of motion for epitaxial growth DD Vvedensky, A Zangwill, CN Luse, MR Wilby Physical Review E 48 (2), 852, 1993 | 262 | 1993 |
| An update of DLXANES, the calculation of X-ray absorption near-edge structure DD Vvedensky, DK Saldin, JB Pendry Computer physics communications 40 (2-3), 421-440, 1986 | 226 | 1986 |
| Growth kinetics and step density in reflection high‐energy electron diffraction during molecular‐beam epitaxy S Clarke, DD Vvedensky Journal of applied physics 63 (7), 2272-2283, 1988 | 215 | 1988 |
| Layer Korringa-Kohn-Rostoker technique for surface and interface electronic properties JM MacLaren, S Crampin, DD Vvedensky, JB Pendry Physical Review B 40 (18), 12164, 1989 | 213 | 1989 |
| Low-dimensional semiconductor structures K Barnham, D Vvedensky Low-Dimensional Semiconductor Structures, 408, 2001 | 208 | 2001 |
| Mean-field theory of quantum dot formation HT Dobbs, DD Vvedensky, A Zangwill, J Johansson, N Carlsson, ... Physical review letters 79 (5), 897, 1997 | 202 | 1997 |
| Island nucleation and growth on reconstructed GaAs (001) surfaces M Itoh, GR Bell, AR Avery, TS Jones, BA Joyce, DD Vvedensky Physical review letters 81 (3), 633, 1998 | 192 | 1998 |
| Reentrant layer-by-layer growth: A numerical study P Šmilauer, MR Wilby, DD Vvedensky Physical Review B 47 (7), 4119, 1993 | 192 | 1993 |
| Self-organized growth on GaAs surfaces BA Joyce, DD Vvedensky Materials Science and Engineering: R: Reports 46 (6), 127-176, 2004 | 181 | 2004 |
| Surface crystallographic information service: a handbook of surface structures JM MacLaren, JB Pendry, PJ Rous, DK Saldin, GA Somorjai, ... Springer Science & Business Media, 2012 | 175 | 2012 |
| Coarsening and slope evolution during unstable spitaxial growth P Smilauer, DD Vvedensky Physical review. B, Condensed matter 52 (19), 14263-14272, 1995 | 170 | 1995 |
| Misorientation dependence of epitaxial growth on vicinal GaAs (001) T Shitara, DD Vvedensky, MR Wilby, J Zhang, JH Neave, BA Joyce Physical Review B 46 (11), 6825, 1992 | 167 | 1992 |
| Submonolayer epitaxy without a critical nucleus C Ratsch, P Šmilauer, A Zangwill, DD Vvedensky Surface science 329 (1-2), L599-L604, 1995 | 166 | 1995 |
| Multiscale modelling of nanostructures DD Vvedensky Journal of Physics: Condensed Matter 16 (50), R1537, 2004 | 154 | 2004 |
| Layer Korringa-Kohn-Rostoker electronic structure code for bulk and interface geometries JM MacLaren, S Crampin, DD Vvedensky, RC Albers, JB Pendry Computer Physics Communications 60 (3), 365-389, 1990 | 140 | 1990 |
| Theory of homoepitaxy on Si (001): I. Kinetics during growth S Clarke, MR Wilby, DD Vvedensky Surface science 255 (1-2), 91-110, 1991 | 134 | 1991 |
