| Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist SWH Chen, YM Huang, KJ Singh, YC Hsu, FJ Liou, J Song, J Choi, ... Photonics Research 8 (5), 630-636, 2020 | 132 | 2020 |
| High-bandwidth green semipolar (20–21) InGaN/GaN micro light-emitting diodes for visible light communication SWH Chen, YM Huang, YH Chang, Y Lin, FJ Liou, YC Hsu, J Song, ... Acs Photonics 7 (8), 2228-2235, 2020 | 110 | 2020 |
| Wide bandgap III-nitride nanomembranes for optoelectronic applications SH Park, G Yuan, D Chen, K Xiong, J Song, B Leung, J Han Nano letters 14 (8), 4293-4298, 2014 | 80 | 2014 |
| Different origins of the yellow luminescence in as-grown high-resistance GaN and unintentional-doped GaN films FJ Xu, B Shen, L Lu, ZL Miao, J Song, ZJ Yang, GY Zhang, XP Hao, ... Journal of Applied Physics 107 (2), 2010 | 71 | 2010 |
| Multi-color broadband visible light source via GaN hexagonal annular structure YH Ko, J Song, B Leung, J Han, YH Cho Scientific reports 4 (1), 5514, 2014 | 64 | 2014 |
| Polarized monolithic white semipolar (20–21) InGaN light-emitting diodes grown on high quality (20–21) GaN/sapphire templates and its application to visible light communication M Khoury, H Li, P Li, YC Chow, B Bonef, H Zhang, MS Wong, S Pinna, ... Nano Energy 67, 104236, 2020 | 61 | 2020 |
| High conductive gate leakage current channels induced by In segregation around screw-and mixed-type threading dislocations in lattice-matched InxAl1− xN/GaN heterostructures J Song, FJ Xu, XD Yan, F Lin, CC Huang, LP You, TJ Yu, XQ Wang, ... Applied Physics Letters 97 (23), 2010 | 58 | 2010 |
| The origin and evolution of V-defects in InxAl1− xN epilayers grown by metalorganic chemical vapor deposition ZL Miao, TJ Yu, FJ Xu, J Song, CC Huang, XQ Wang, ZJ Yang, GY Zhang, ... Applied Physics Letters 95 (23), 2009 | 43 | 2009 |
| Epitaxial lateral overgrowth of nitrogen-polar (0001̅) GaN by metalorganic chemical vapor deposition J Song, G Yuan, K Xiong, B Leung, J Han Crystal growth & design 14 (5), 2510-2515, 2014 | 40 | 2014 |
| Evolutionary selection growth: towards template‐insensitive preparation of single‐crystal layers B Leung, J Song, Y Zhang, J Han Advanced Materials 25 (9), 1285-1289, 2013 | 40 | 2013 |
| Single crystal gallium nitride nanomembrane photoconductor and field effect transistor K Xiong, SH Park, J Song, G Yuan, D Chen, B Leung, J Han Advanced Functional Materials 24 (41), 6503-6508, 2014 | 36 | 2014 |
| Semipolar (202¯ 1) GaN and InGaN quantum wells on sapphire substrates B Leung, D Wang, YS Kuo, K Xiong, J Song, D Chen, SH Park, SY Hong, ... Applied Physics Letters 104 (26), 2014 | 35 | 2014 |
| Elimination of stacking faults in semipolar GaN and light-emitting diodes grown on sapphire J Song, J Choi, C Zhang, Z Deng, Y Xie, J Han ACS applied materials & interfaces 11 (36), 33140-33146, 2019 | 34 | 2019 |
| Strain effects on InxAl1− xN crystalline quality grown on GaN templates by metalorganic chemical vapor deposition ZL Miao, TJ Yu, FJ Xu, J Song, L Lu, CC Huang, ZJ Yang, XQ Wang, ... Journal of Applied Physics 107 (4), 2010 | 32 | 2010 |
| Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures CM Yin, N Tang, S Zhang, JX Duan, FJ Xu, J Song, FH Mei, XQ Wang, ... Applied Physics Letters 98 (12), 2011 | 29 | 2011 |
| Semipolar (2021) GaN and InGaN light-emitting diodes grown on sapphire J Song, J Choi, K Xiong, Y Xie, JJ Cha, J Han ACS Applied Materials & Interfaces 9 (16), 14088-14092, 2017 | 25 | 2017 |
| Study of the leakage current mechanism in Schottky contacts to Al0. 25Ga0. 75N/GaN heterostructures with AlN interlayers S Huang, B Shen, FJ Xu, F Lin, ZL Miao, J Song, L Lu, LB Cen, LW Sang, ... Semiconductor science and technology 24 (5), 055005, 2009 | 24 | 2009 |
| Magnetotransport properties of lattice-matched In0. 18Al0. 82N/AlN/GaN heterostructures ZL Miao, N Tang, FJ Xu, LB Cen, K Han, J Song, CC Huang, TJ Yu, ... Journal of Applied Physics 109 (1), 2011 | 22 | 2011 |
| Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures J Wang, F Xu, X Zhang, W An, XZ Li, J Song, W Ge, G Tian, J Lu, X Wang, ... Scientific reports 4 (1), 6521, 2014 | 20 | 2014 |
| High polarization and fast modulation speed of dual wavelengths electroluminescence from semipolar (20-21) micro light-emitting diodes with indium tin oxide surface grating H Zhang, P Li, H Li, J Song, S Nakamura, SP DenBaars Applied Physics Letters 117 (18), 2020 | 19 | 2020 |
Jung HanWilliam Norton Professor of Electrical Engineering, Yale University在 yale.edu 的电子邮件经过验证
