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Jean-Baptiste Laloë
Jean-Baptiste Laloë
在 globalfoundries.com 的电子邮件经过验证
标题
引用次数
引用次数
年份
Electrically tunable surface-to-bulk coherent coupling in topological insulator thin films
H Steinberg, JB Laloë, V Fatemi, JS Moodera, P Jarillo-Herrero
Physical Review B—Condensed Matter and Materials Physics 84 (23), 233101, 2011
3822011
Ferromagnetism in thin-film Cr-doped topological insulator Bi2Se3
PPJ Haazen, JB Laloë, TJ Nummy, HJM Swagten, P Jarillo-Herrero, ...
Applied Physics Letters 100 (8), 2012
2092012
Initial/final state selection of the spin polarization in electron tunneling across an epitaxial Fe∕ GaAs (001) interface
H Kurebayashi, SJ Steinmuller, JB Laloe, T Trypiniotis, S Easton, ...
Applied Physics Letters 91 (10), 2007
362007
Spontaneous symmetry breaking in vortex systems with two repulsive lengthscales
PJ Curran, WM Desoky, MV Milos̆ević, A Chaves, JB Laloë, JS Moodera, ...
Scientific Reports 5 (1), 15569, 2015
172015
In-plane magnetoresistance and magnetization reversal of cobalt antidot arrays
TJ Meng, JB Laloë, SN Holmes, A Husmann, GAC Jones
Journal of Applied Physics 106 (3), 2009
142009
De-oxidation of metal gate for improved gate performance
H Liu, WP Peng, JB Laloe
US Patent App. 14/219,039, 2015
102015
Molecular‐Beam Epitaxially Grown MgB2 Thin Films and Superconducting Tunnel Junctions
JB Laloë, TH Kim, JS Moodera
Advances in Condensed Matter Physics 2011 (1), 989732, 2011
102011
Effect of MgO barriers on ferromagnetic metallic layers studied by polarized neutron reflectivity
JB Laloë, A Ionescu, S Easton, NJ Steinke, TJ Hayward, H Kurebayashi, ...
Applied Physics Letters 93 (1), 2008
102008
Room-Temperature Study of the Magnetic Moment of Ultrathin Fe Films on GaAs
JB Laloë, F Van Belle, A Ionescu, CAF Vaz, M Tselepi, G Wastlbauer, ...
IEEE transactions on magnetics 42 (10), 2933-2935, 2006
102006
Methods of forming replacement gate structures for NFET semiconductor devices and devices having such gate structures
JB Laloe, H Liu, W Kim
US Patent 8,803,254, 2014
92014
Spin-injection device prospects for half-metallic Fe3O4: Al0. 1Ga0. 9As interfaces
R Mansell, JB Laloë, SN Holmes, PKJ Wong, YB Xu, I Farrer, GAC Jones, ...
Journal of Applied Physics 108 (3), 2010
92010
A novel low resistance gate fill for extreme gate length scaling at 20nm and beyond for gate-last high-k/metal gate CMOS technology
U Kwon, K Wong, SA Krishnan, L Econimikos, X Zhang, C Ortolland, ...
2012 Symposium on VLSI Technology (VLSIT), 29-30, 2012
82012
Elimination of tungsten-voids in middle-of-line contacts for advanced planar cmos and finfet technology
WP Peng, M Chi, G Derderian, K Das, Y Zhang, JB Laloe, D Deniz, S Patil, ...
2016 China Semiconductor Technology International Conference (CSTIC), 1-4, 2016
62016
Schottky and tunneling behavior of Fe/MgO/Ge (100) structures
JB Laloë, MC Hickey, J Chang, JS Moodera
Applied Physics Letters 97 (22), 2010
62010
Strategies for Reducing Particle Defects in Ti and TiN Thin-Film Deposition Processes
A Kumar, N Bhattacharjee, B Patel, JB Laloë, OO Famodu, I Ferain
IEEE Transactions on Semiconductor Manufacturing 32 (1), 48-53, 2018
42018
Control of epitaxy-induced magnetocrystalline anisotropy in a molecular beam epitaxy–grown Co∕ MgO∕ Fe∕ MgO (100) pseudo-spin-valve
JB Laloë, A Ionescu, TJ Hayward, J Llandro, JAC Bland, ME Vickers
Applied Physics Letters 92 (8), 2008
42008
InGaAs spin light emitting diodes measured in the Faraday and oblique Hanle geometries
R Mansell, JB Laloë, SN Holmes, A Petrou, I Farrer, GAC Jones, ...
Journal of Physics D: Applied Physics 49 (16), 165103, 2016
32016
Observation of Phonon Replica Emission in an In-Situ Fe/GaAs Spin LED
R Mansell, JB Laloë, SN Holmes, I Khan, M Yasar, A Petrou, I Farrer, ...
IEEE Transactions on Magnetics 44 (11), 2666-2669, 2008
32008
Double barrier layer sets for contacts in semiconductor device
A Kumar, SK Mishra, JBJ Laloë, WZ Gao
US Patent 10,453,747, 2019
22019
Spin-current-induced dynamics in ferromagnetic nanopillars of lateral spin-valve structures
JB Laloë, T Yang, T Kimura, Y Otani
Journal of Applied Physics 105 (7), 2009
22009
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