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Haicheng Cao
标题
引用次数
引用次数
年份
Light modulation and water splitting enhancement using a composite porous GaN structure
C Yang, X Xi, Z Yu, H Cao, J Li, S Lin, Z Ma, L Zhao
ACS applied materials & interfaces 10 (6), 5492-5497, 2018
612018
Influence of quantum confined Stark effect and carrier localization effect on modulation bandwidth for GaN-based LEDs
S Zhu, S Lin, J Li, Z Yu, H Cao, C Yang, J Li, L Zhao
Applied Physics Letters 111 (17), 2017
562017
GaN with laterally aligned nanopores to enhance the water splitting
C Yang, L Liu, S Zhu, Z Yu, X Xi, S Wu, H Cao, J Li, L Zhao
The Journal of Physical Chemistry C 121 (13), 7331-7336, 2017
522017
Degradation and failure mechanism of AlGaN-based UVC-LEDs
Z Ma, H Cao, S Lin, X Li, L Zhao
Solid-State Electronics 156, 92-96, 2019
492019
Color converted white light-emitting diodes with 637.6 MHz modulation bandwidth
H Cao, S Lin, Z Ma, X Li, J Li, L Zhao
IEEE Electron Device Letters 40 (2), 267-270, 2018
452018
Hybrid light emitting diodes based on stable, high brightness all-inorganic CsPbI 3 perovskite nanocrystals and InGaN
C Zhang, L Turyanska, H Cao, L Zhao, MW Fay, R Temperton, J O'Shea, ...
Nanoscale 11 (28), 13450-13457, 2019
362019
High responsivity and wavelength selectivity of GaN‐based resonant cavity photodiodes
J Li, C Yang, L Liu, H Cao, S Lin, X Xi, X Li, Z Ma, K Wang, A Patanè, ...
Advanced Optical Materials 8 (7), 1901276, 2020
312020
Flexible self-powered DUV photodetectors with high responsivity utilizing Ga2O3/NiO heterostructure on buffered Hastelloy substrates
X Tang, Y Lu, R Lin, CH Liao, Y Zhao, KH Li, N Xiao, H Cao, W Babatain, ...
Applied Physics Letters 122 (12), 2023
232023
Enhancing the spontaneous emission rate by modulating carrier distribution in GaN-based surface plasmon light-emitting diodes
S Zhu, Z Yu, L Liu, C Yang, H Cao, X Xi, J Li, L Zhao
Optics Express 25 (9), 9617-9627, 2017
232017
Degradation and corresponding failure mechanism for GaN-based LEDs
J Fu, L Zhao, H Cao, X Sun, B Sun, J Wang, J Li
AIP Advances 6 (5), 2016
232016
GaN-based flip-chip parallel micro LED array for visible light communication
SC Zhu, LX Zhao, C Yang, HC Cao, ZG Yu, L Liu
International Conference on Optoelectronics and Microelectronics Technology …, 2017
222017
Optical and frequency degradation behavior of GaN-based micro-LEDs for visible light communication
Z Ma, H Cao, S Lin, X Li, X Xi, J Li, L Zhao
Optics Express 28 (9), 12795-12804, 2020
212020
GaN nanocolumns fabricated by self-assembly Ni mask and its enhanced photocatalytic performance in water splitting
X Xi, C Yang, H Cao, Z Yu, J Li, S Lin, Z Ma, L Zhao
Applied Surface Science 462, 310-315, 2018
202018
A machine learning study on superlattice electron blocking layer design for AlGaN deep ultraviolet light-emitting diodes using the stacked XGBoost/LightGBM algorithm
R Lin, Z Liu, P Han, R Lin, Y Lu, H Cao, X Tang, C Wang, V Khandelwal, ...
Journal of Materials Chemistry C 10 (46), 17602-17610, 2022
162022
Effect of the AlN strain compensation layer on InGaN quantum well red-light-emitting diodes beyond epitaxy
Z Liu, M Nong, Y Lu, H Cao, S Yuvaraja, N Xiao, Z Alnakhli, ...
Optics Letters 47 (23), 6229-6232, 2022
142022
Failure Mechanism of Phosphors in GaN‐Based White LEDs
Z Ma, H Cao, X Sun, C Yang, X Xi, J Li, S Lin, L Zhao
physica status solidi (a) 216 (6), 1800335, 2019
122019
Composite degradation model and corresponding failure mechanism for mid-power GaN-based white LEDs
H Cao, Z Ma, B Sun, X Sun, C Yang, X Li, J Wang, L Zhao
AIP Advances 8 (6), 2018
92018
Modulation and optoelectronic properties of GaN-based light-emitting diodes on GaN template
S Lin, H Cao, J Li, X Sun, H Xiu, L Zhao
Applied Physics Express 11 (12), 122101, 2018
72018
Degradation behaviors and reliability of high power GaN-based white LEDs with different structures
H Cao, J Fu, L Zhao, X Sun, B Sun, J Wang, J Li
2016 13th China International Forum on Solid State Lighting (SSLChina), 74-79, 2016
52016
Space‐Confined Synthesis of Monolayer Graphdiyne in MXene Interlayer
J Li, H Cao (co-first), Q Wang, H Zhang, Q Liu, C Chen, Z Shi, G Li, ...
Advanced Materials 36 (7), 2308429, 2024
22024
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