Normally-off GaN-on-Si MISFET using PECVD SiON gate dielectric HS Kim, SW Han, WH Jang, CH Cho, KS Seo, J Oh, HY Cha IEEE Electron Device Letters 38 (8), 1090-1093, 2017 | 53 | 2017 |
Unidirectional AlGaN/GaN-on-Si HFETs with reverse blocking drain JG Lee, SW Han, BR Park, HY Cha Applied Physics Express 7 (1), 014101, 2013 | 31 | 2013 |
Dynamic on-resistance of normally-off recessed AlGaN/GaN-on-Si metal–oxide–semiconductor heterojunction field-effect transistor SW Han, JG Lee, CH Cho, HY Cha Applied Physics Express 7 (11), 111002, 2014 | 30 | 2014 |
Design of GaN/AlGaN/GaN super-heterojunction schottky diode SW Han, J Song, R Chu IEEE Transactions on Electron Devices 67 (1), 69-74, 2019 | 25 | 2019 |
Experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diode capable of 2.8 kV switching SW Han, J Song, SH Yoo, Z Ma, RM Lavelle, DW Snyder, JM Redwing, ... IEEE Electron Device Letters 41 (12), 1758-1761, 2020 | 22 | 2020 |
Au-free AlGaN/GaN heterostructure field-effect transistor with recessed overhang ohmic contacts using a Ti/Al bilayer JG Lee, HS Kim, DH Kim, SW Han, KS Seo, HY Cha Semiconductor Science and Technology 30 (8), 085005, 2015 | 18 | 2015 |
Hydrogen gas sensor of Pd‐functionalised AlGaN/GaN heterostructure with high sensitivity and low‐power consumption JH Choi, MG Jo, SW Han, H Kim, SH Kim, S Jang, JS Kim, HY Cha Electronics Letters 53 (17), 1200-1202, 2017 | 15 | 2017 |
Normally-Off MOS-HFET on AlGaN/GaN-on-Si(110) Grown by NH3 MBE SW Han, Y Noh, MG Jo, SH Kim, JE Oh, KS Seo, HY Cha IEEE Electron Device Letters 37 (12), 1613-1616, 2016 | 14 | 2016 |
12.5 kV GaN super-heterojunction Schottky barrier diodes SW Han, J Song, M Sadek, A Molina, MA Ebrish, SE Mohney, ... IEEE Transactions on Electron Devices 68 (11), 5736-5741, 2021 | 12 | 2021 |
Mg-compensation effect in GaN buffer layer for AlGaN/GaN high-electron-mobility transistors grown on 4H-SiC substrate K Ko, K Lee, B So, C Heo, K Lee, T Kwak, SW Han, HY Cha, O Nam Japanese Journal of Applied Physics 56 (1), 015502, 2016 | 12 | 2016 |
Diode bridge embedded AlGaN/GaN bidirectional switch BR Park, SW Han, HY Cha IEEE Electron Device Letters 36 (4), 324-326, 2015 | 10 | 2015 |
AlGaN/GaN metal–oxide–semiconductor heterojunction field-effect transistor integrated with clamp circuit to enable normally-off operation SW Han, SH Park, JG Lee, J Lim, HY Cha IEEE Electron Device Letters 36 (6), 540-542, 2015 | 9 | 2015 |
Impact of charge balance on static and dynamic characteristics of GaN super-heterojunction Schottky barrier diodes JT Kemmerling, R Guan, M Sadek, S Isukapati, W Sung, SW Han, R Chu IEEE Electron Device Letters 43 (5), 701-704, 2022 | 8 | 2022 |
AlGaN/GaN-on-Si monolithic power-switching device with integrated gate current booster SW Han, MG Jo, H Kim, CH Cho, HY Cha Solid-State Electronics 134, 30-38, 2017 | 8 | 2017 |
Study of interface trap density of AlOxNy/GaN MOS structures J Song, SW Han, H Luo, J Rumsey, JH Leach, R Chu Applied Physics Letters 119 (12), 2021 | 7 | 2021 |
Light-Shield Layers Free Photosensitive Inverters Comprising GaN-Drivers and Multi-Layered MoS2-Loads SG Seo, SW Han, HY Cha, S Yang, SH Jin IEEE Electron Device Letters 40 (1), 107-110, 2018 | 7 | 2018 |
High-temperature static and dynamic characteristics of 4.2-kV GaN super-heterojunction pn diodes M Sadek, SW Han, J Song, JC Gallagher, TJ Anderson, R Chu IEEE Transactions on Electron Devices 69 (4), 1912-1917, 2022 | 6 | 2022 |
Investigation of frequency-dependent permittivity tunability of P (VDF-TrFE) metal-ferroelectric-metal capacitor SW Han, CH Lee, H Shin, JH Lee, HY Cha Results in Physics 12, 469-470, 2019 | 6 | 2019 |
GaN super-heterojunction Schottky barrier diode with over 10 kV blocking voltage SW Han, J Song, R Chu 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2021 | 5 | 2021 |
High- GaN Varactors for mm-Wave Applications: A Physics-Based Simulation Study J Song, SW Han, R Chu IEEE Transactions on Electron Devices 66 (10), 4134-4139, 2019 | 5 | 2019 |