受强制性开放获取政策约束的文章 - Sang-Woo Han了解详情
无法在其他位置公开访问的文章：8 篇
Impact of charge balance on static and dynamic characteristics of GaN super-heterojunction Schottky barrier diodes
JT Kemmerling, R Guan, M Sadek, S Isukapati, W Sung, SW Han, R Chu
IEEE Electron Device Letters 43 (5), 701-704, 2022
强制性开放获取政策： US Department of Energy, US Department of Defense
GaN Super-Heterojunction FETs With 10-kV Blocking and 3-kV Dynamic Switching
JT Kemmerling, R Guan, M Sadek, Y Xiong, J Song, SW Han, S Isukapati, ...
IEEE Transactions on Electron Devices, 2024
强制性开放获取政策： US Department of Energy, US Department of Defense
High-temperature static and dynamic characteristics of 4.2-kV GaN super-heterojunction pn diodes
M Sadek, SW Han, J Song, JC Gallagher, TJ Anderson, R Chu
IEEE Transactions on Electron Devices 69 (4), 1912-1917, 2022
强制性开放获取政策： US Department of Energy
Investigation of phase evolution within ZnO–Bi2O3 varistors utilizing thin film prototypes
K Ferri, EA Paisley, C DiAntonio, SW Han, R Chu, JP Maria
Journal of Materials Science 56, 12740-12752, 2021
强制性开放获取政策： US Department of Energy
GaN super-heterojunction Schottky barrier diode with over 10 kV blocking voltage
SW Han, J Song, R Chu
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2021
强制性开放获取政策： US Department of Energy
Enhancement of the electrical and thermal performance of AlGaN/GaN HEMTs using a novel resistive field plate structure
B Chatterjee, TK Kim, Y Song, JS Lundh, SW Han, D Shoemaker, JM Lee, ...
2019 18th IEEE Intersociety Conference on Thermal and Thermomechanical …, 2019
强制性开放获取政策： US Department of Defense
8.85-kV/0.72-A Charge-Balanced GaN Super-Heterojunction Schottky Barrier Diode
SW Han, M Sadek, JT Kemmerling, R Guan, R Chu
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM …, 2022
强制性开放获取政策： US Department of Energy, US Department of Defense
Medium-Voltage Co-Packaged Charge-Balanced GaN SHJ-SBD with a SiC MOSFET in a Chopper Power Module
D Lester, M Cairnie, C DiMarino, SW Han, R Chu
2023 IEEE Energy Conversion Congress and Exposition (ECCE), 5462-5467, 2023
强制性开放获取政策： US Department of Energy
可在其他位置公开访问的文章：2 篇
Experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diode capable of 2.8 kV switching
SW Han, J Song, SH Yoo, Z Ma, RM Lavelle, DW Snyder, JM Redwing, ...
IEEE Electron Device Letters 41 (12), 1758-1761, 2020
强制性开放获取政策： US Department of Energy, US Department of Defense
12.5 kV GaN super-heterojunction Schottky barrier diodes
SW Han, J Song, M Sadek, A Molina, MA Ebrish, SE Mohney, ...
IEEE Transactions on Electron Devices 68 (11), 5736-5741, 2021
强制性开放获取政策： US Department of Energy
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