| Role of substrate temperature on MoO3 thin films by the JNS pyrolysis technique for P–N junction diode application M Balaji, J Chandrasekaran, M Raja Materials Science in Semiconductor Processing 43, 104-113, 2016 | 114 | 2016 |
| Impact of annealing treatment on structural and dc electrical properties of spin-coated tungsten trioxide thin films for Si/WO3/Ag junction diode BJ 1. M. Raja, J. Chandrasekaran, M. Balaji , Mater. Sci. Semicond. Process 56, 145-154, 0 | 61* | |
| Impact of Zr content on multiphase zirconium–tungsten oxide (Zr–WOx) films and its MIS structure of Cu/Zr–WOx/p-Si Schottky barrier diodes R Marnadu, J Chandrasekaran, M Raja, M Balaji, V Balasubramani Journal of Materials Science: Materials in Electronics 29, 2618-2627, 2018 | 51 | 2018 |
| Influence of metal work function and incorporation of Sr atom on WO3 thin films for MIS and MIM structured SBDs R Marnadu, J Chandrasekaran, M Raja, M Balaji, S Maruthamuthu, ... Superlattices and Microstructures 119, 134-149, 2018 | 48 | 2018 |
| Structural, optical and electrical properties of Ru doped MoO3 thin films and its P–N diode application by JNS pyrolysis technique M Balaji, J Chandrasekaran, M Raja, S Rajesh Journal of Materials Science: Materials in Electronics 27, 11646-11658, 2016 | 46 | 2016 |
| Investigation of microstructural, optical and dc electrical properties of spin coated Al: WO3 thin films for n-Al: WO3/p-Si heterojunction diodes M Raja, J Chandrasekaran, M Balaji, P Kathirvel Optik 145, 169-180, 2017 | 27 | 2017 |
| Effect of Annealing Temperature on Structural and Electrical Properties of Al/ZrO2/p-Si MIS Schottky Diodes K Sasikumar, R Bharathikannan, M Raja Silicon 11, 137-143, 2019 | 26 | 2019 |
| Fabrication and characterization of rare earth (Ce, Gd, and Y) doped ZrO2 based metal-insulator-semiconductor (MIS) type Schottky barrier diodes K Sasikumar, R Bharathikannan, M Raja, B Mohanbabu Superlattices and Microstructures 139, 106424, 2020 | 23 | 2020 |
| Evaluation of microstructural and electrical properties of WO3-x thin films for p-Si/n-WO3-x/Ag junction diodes M Raja, J Chandrasekaran, M Balaji Optik 127 (22), 11009-11019, 2016 | 23 | 2016 |
| Investigation on microstructural and opto-electrical properties of Zr-doped SnO2 thin films for Al/Zr: SnO2/p-Si Schottky barrier diode application K Ravikumar, S Agilan, M Raja, R Marnadu, T Alshahrani, M Shkir, ... Physica B: Condensed Matter 599, 412452, 2020 | 22 | 2020 |
| Fabrication of ON/OFF switching response based on n-Ni-doped MoO3/p-Si junction diodes using Ni-MoO3 thin films as n-type layer prepared by JNS pyrolysis … M Balaji, J Chandrasekaran, M Raja, R Marnadu, M Ramamurthy, M Shkir Applied Physics A 126, 1-14, 2020 | 21 | 2020 |
| Impact of Cu concentration on the properties of spray coated Cu-MoO3 thin films: evaluation of n-CuMoO3/p-Si junction diodes by JV, Norde and Cheung’s methods M Balaji, J Chandrasekaran, M Raja, R Marnadu Materials Research Express 6 (10), 106404, 2019 | 16 | 2019 |
| The Structural, Optical and Electrical Properties of Spin Coated WO 3 Thin Films Using Organic Acids M Raja, J Chandrasekaran, M Balaji silicon 9, 201-210, 2017 | 15 | 2017 |
| Morphological and optical evolution of different organic acids used MoO3 thin films by spin coating method M Balaji, J Chandrasekaran, M Raja Optik 127 (15), 6015-6027, 2016 | 13 | 2016 |
| Influence of Annealing Temperature on Structural and dc Electrical Properties of SnO2 Thin Films for Schottky Barrier Diodes K Ravikumar, S Agilan, N Muthukumarasamy, M Raja, R Lakshmanan, ... Silicon 10, 1591-1599, 2018 | 12 | 2018 |
| Influence of metal (M = Cd, In, and Sn) dopants on the properties of spin-coated WO3 thin films and fabrication of temperature-dependent heterojunction diodes M Raja, J Chandrasekaran, M Balaji, P Kathirvel, R Marnadu Journal of Sol-Gel Science and Technology 93, 495-505, 2020 | 11 | 2020 |
| Effect of Organic Additives on the Characteristics of Al/Organic Additive:ZrO2/p-Si Metal–Insulator-Semiconductor (MIS) Type Schottky Barrier Diodes K Sasikumar, R Bharathikannan, J Chandrasekaran, M Raja Journal of Inorganic and Organometallic Polymers and Materials 30, 564-572, 2020 | 11 | 2020 |
| Characterization of WMoO3 Thin Films and its n-WMoO3/p-Si Junction Diodes Via JNS Pyrolysis Technique M Balaji, J Chandrasekaran, M Raja Zeitschrift für Physikalische Chemie 231 (5), 1017-1037, 2017 | 11 | 2017 |
| Cadmium sulfide doped films with different materials by chemical bath deposition process MR R. Ganesh, V. Senthil Kumar, K. Panneerselvam Scholars Research Library 4, 97-102, 2013 | 6* | 2013 |
| Fabrication and characterization of novel Ga-doped WO3 films and n-Ga@ WO3/p-Si junction diode for optoelectronic device applications M Raja, R Marnadu, M Balaji, K Ravikumar, VG Krishna, M Kumar, ... Inorganic Chemistry Communications 139, 109291, 2022 | 5 | 2022 |
