| Influence of channel and gate engineering on the analog and RF performance of DG MOSFETs N Mohankumar, B Syamal, CK Sarkar IEEE transactions on Electron Devices 57 (4), 820-826, 2010 | 217 | 2010 |
| The influence of High-k passivation layer on Breakdown voltage of Schottky AlGaN/GaN HEMTs ND N.Mohankumar, BinolaK.Jebalin, ShobhaRekh, Prajoon.P Microelectronics Journal 46 (12), 1387–1391, 2015 | 55 | 2015 |
| Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics D Nirmal, P Vijayakumar, DM Thomas, BK Jebalin, N Mohankumar Microelectronics reliability 53 (3), 499-504, 2013 | 51 | 2013 |
| Efficient III-Nitride MIS-HEMT devices with high-κ gate dielectric for high- power switching boost converter circuits SKS N. Mohankumar, A.Mohanbabu, D.Godwin raj, Partha Sarkar Superlattices and Microstructures 103, 270-284, 2017 | 44 | 2017 |
| Unique Model of Polarization engineered AlGaN/GaN Based HEMTs for High Power Applications ND N.Mohankumar, BinolaK.Jebalin, ShobhaRekh, Prajoo.P, Godwinraj.D Journal of Superlattices and microstructures 78, 210–223, 2015 | 44* | 2015 |
| Investigation of novel attributes of single halo dual-material double gate MOSFETs for analog/RF applications N Mohankumar, B Syamal, CK Sarkar Microelectronics Reliability 49 (12), 1491-1497, 2009 | 43 | 2009 |
| Modeling of sheet carrier density and microwave frequency characteristics in Spacer based AlGaN/AlN/GaN HEMT devices A Mohanbabu, N Anbuselvan, N Mohankumar, D Godwinraj, CK Sarkar Solid-State Electronics 91, 44-52, 2014 | 40 | 2014 |
| Subthreshold analysis of nanoscale FinFETs for ultra low power application using high-k materials D Nirmal, P Vijayakumar, PPC Samuel, BK Jebalin, N Mohankumar International Journal of Electronics 100 (6), 803-817, 2013 | 38 | 2013 |
| Influence of barrier thickness on AlInN/GaN underlap DG MOSFET device performance H Pardeshi, G Raj, S Pati, N Mohankumar, CK Sarkar Superlattices and Microstructures 60, 47-59, 2013 | 37 | 2013 |
| Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor JA N. Mohan Kumar, Charles Pravin , D. Nirmal, P. Prajoon Superlattices and Microstructures 104, 470-476, 2017 | 35 | 2017 |
| Nanoscale tri gate MOSFET for ultra low power applications using high-k dielectrics D Nirmal, PV Kumar, D Joy, BK Jebalin, NM Kumar 2013 IEEE 5th International Nanoelectronics Conference (INEC), 12-19, 2013 | 35 | 2013 |
| Subthreshold analog/RF performance of underlap DG FETs with asymmetric source/drain extensions K Koley, B Syamal, A Kundu, N Mohankumar, CK Sarkar Microelectronics Reliability 52 (11), 2572-2578, 2012 | 35 | 2012 |
| An efficient framework for Indian sign language recognition using wavelet transform MS Anand, NM Kumar, A Kumaresan Circuits and Systems 7 (8), 1874-1883, 2016 | 34 | 2016 |
| Design of RZF antenna for ECG monitoring using IoT GP Ramesh, NM Kumar Multimedia Tools and Applications 79 (5), 4011-4026, 2020 | 31 | 2020 |
| Radiometric analysis of ankle edema via RZF antenna for biomedical applications GP Ramesh, N Mohan Kumar Wireless Personal Communications 102 (2), 1785-1798, 2018 | 31 | 2018 |
| Modeling of 2DEG sheet carrier density and DC characteristics in spacer based AlGaN/AlN/GaN HEMT devices S Baskaran, A Mohanbabu, N Anbuselvan, N Mohankumar, D Godwinraj, ... Superlattices and Microstructures 64, 470-482, 2013 | 27 | 2013 |
| Effect of underlap and gate length on device performance of an AlInN/GaN underlap MOSFET H Pardeshi, SK Pati, G Raj, N Mohankumar, CK Sarkar Journal of Semiconductors 33 (12), 124001, 2012 | 26 | 2012 |
| Study of body and oxide thickness variation on analog and RF performance of underlap DG-MOSFETs SK Pati, K Koley, A Dutta, N Mohankumar, CK Sarkar Microelectronics Reliability 54 (6-7), 1137-1142, 2014 | 25 | 2014 |
| Performance assessment of gate material engineered AlInN/GaN underlap DG MOSFET for enhanced carrier transport efficiency HM Pardeshi, G Raj, S Pati, N Mohankumar, CK Sarkar Superlattices and Microstructures 60, 10-22, 2013 | 24 | 2013 |
| Comparative assessment of InGaAs sub-channel and InAs composite channel Double gate (DG)-HEMT for Sub-millimeter wave applications AM N. Mohankumar, R. Saravanakumar AEU - International Journal of Electronics and Communications 83, 462-469, 2018 | 23 | 2018 |
