关注
Weixiang zhang
Weixiang zhang
未知所在单位机构
在 buffalo.edu 的电子邮件经过验证
标题
引用次数
引用次数
年份
Impact of geometry on transport properties of armchair graphene nanoribbon heterojunction
W Zhang, C Basaran, T Ragab
Carbon 124, 422-428, 2017
362017
Mechanical and electronic properties of graphene nanomesh heterojunctions
J Zhang, W Zhang, T Ragab, C Basaran
Computational Materials Science 153, 64-72, 2018
282018
Unraveling mechanics of armchair and zigzag graphene nanoribbons
W Zhang, T Ragab, C Basaran
International Journal of Damage Mechanics 26 (3), 447-462, 2017
262017
Electrostatic Doping-Based All GNR Tunnel FET: An Energy-Efficient Design for Power Electronics
W Zhang, T Ragab, C Basaran
IEEE Transactions on Electron Devices, 1971 - 1978, 2019
172019
Anisotropy of graphene nanoflake diamond interface frictional properties
J Zhang, E Osloub, F Siddiqui, W Zhang, T Ragab, C Basaran
Materials 12 (9), 1425, 2019
142019
Impact of electrostatic doping level on the dissipative transport in graphene nanoribbons tunnel field-effect transistors
W Zhang, T Ragab, J Zhang, C Basaran
Carbon 153, 120-126, 2019
122019
Influence of defects on dissipative transport in graphene nanoribbons tunnel field-effect transistor
W Zhang, T Ragab, J Zhang, C Basaran
Nanotechnology 31 (4), 045703, 2019
72019
High current density electron wind forces in metallic graphene nanoribbons
J Zhang, T Ragab, W Zhang, C Basaran
Nanotechnology 31 (35), 355203, 2020
52020
Impact of Electrostatic Doping Level On Dissipative Carrier Transport In GNR TFET Devices
W Zhang, T Ragab, J Zhang, C Basaran
arXiv preprint arXiv:1905.06428, 2019
22019
Electrostatic doping-based all GNR tunnel field-effect transistor
C Basaran, W Zhang, T Ragab
US Patent 10,593,778, 2020
2020
A Multi-Scale Modeling of Graphene Nanoribbon Device in Power Switch Application
W Zhang
State University of New York at Buffalo, 2019
2019
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