Impact of geometry on transport properties of armchair graphene nanoribbon heterojunction W Zhang, C Basaran, T Ragab Carbon 124, 422-428, 2017 | 36 | 2017 |
Mechanical and electronic properties of graphene nanomesh heterojunctions J Zhang, W Zhang, T Ragab, C Basaran Computational Materials Science 153, 64-72, 2018 | 28 | 2018 |
Unraveling mechanics of armchair and zigzag graphene nanoribbons W Zhang, T Ragab, C Basaran International Journal of Damage Mechanics 26 (3), 447-462, 2017 | 26 | 2017 |
Electrostatic Doping-Based All GNR Tunnel FET: An Energy-Efficient Design for Power Electronics W Zhang, T Ragab, C Basaran IEEE Transactions on Electron Devices, 1971 - 1978, 2019 | 17 | 2019 |
Anisotropy of graphene nanoflake diamond interface frictional properties J Zhang, E Osloub, F Siddiqui, W Zhang, T Ragab, C Basaran Materials 12 (9), 1425, 2019 | 14 | 2019 |
Impact of electrostatic doping level on the dissipative transport in graphene nanoribbons tunnel field-effect transistors W Zhang, T Ragab, J Zhang, C Basaran Carbon 153, 120-126, 2019 | 12 | 2019 |
Influence of defects on dissipative transport in graphene nanoribbons tunnel field-effect transistor W Zhang, T Ragab, J Zhang, C Basaran Nanotechnology 31 (4), 045703, 2019 | 7 | 2019 |
High current density electron wind forces in metallic graphene nanoribbons J Zhang, T Ragab, W Zhang, C Basaran Nanotechnology 31 (35), 355203, 2020 | 5 | 2020 |
Impact of Electrostatic Doping Level On Dissipative Carrier Transport In GNR TFET Devices W Zhang, T Ragab, J Zhang, C Basaran arXiv preprint arXiv:1905.06428, 2019 | 2 | 2019 |
Electrostatic doping-based all GNR tunnel field-effect transistor C Basaran, W Zhang, T Ragab US Patent 10,593,778, 2020 | | 2020 |
A Multi-Scale Modeling of Graphene Nanoribbon Device in Power Switch Application W Zhang State University of New York at Buffalo, 2019 | | 2019 |