| GaN Schottky metal–semiconductor–metal UV photodetectors on Si (111) grown by ammonia-MBE L Ravikiran, K Radhakrishnan, N Dharmarasu, M Agrawal, Z Wang, ... IEEE Sensors Journal 17 (1), 72-77, 2016 | 41 | 2016 |
| Surface related tunneling leakage in β-Ga 2 O 3 (001) vertical Schottky barrier diodes R Lingaparthi, K Sasaki, QT Thieu, A Takatsuka, F Otsuka, S Yamakoshi, ... Applied Physics Express, 2019 | 40 | 2019 |
| Surface states on (001) oriented β-Ga2O3 epilayers, their origin, and their effect on the electrical properties of Schottky barrier diodes R Lingaparthi, QT Thieu, K Koshi, D Wakimoto, K Sasaki, A Kuramata Applied Physics Letters 116 (9), 2020 | 30 | 2020 |
| Effects of oxygen annealing of β-Ga2O3 epilayers on the properties of vertical Schottky barrier diodes R Lingaparthi, QT Thieu, K Sasaki, A Takatsuka, F Otsuka, S Yamakoshi, ... ECS Journal of Solid State Science and Technology 9 (2), 024004, 2020 | 26 | 2020 |
| Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si (111) using ammonia-molecular beam epitaxy L Ravikiran, N Dharmarasu, K Radhakrishnan, M Agrawal, L Yiding, ... Journal of Applied Physics 117 (2), 2015 | 23 | 2015 |
| Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si (111) by ammonia molecular beam epitaxy N Dharmarasu, K Radhakrishnan, M Agrawal, L Ravikiran, S Arulkumaran, ... Applied physics express 5 (9), 091003, 2012 | 23 | 2012 |
| Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy M Agrawal, N Dharmarasu, K Radhakrishnan, L Ravikiran Thin Solid Films 520 (24), 7109-7114, 2012 | 15 | 2012 |
| Responsivity drop due to conductance modulation in GaN metal-semiconductor-metal Schottky based UV photodetectors on Si (111) L Ravikiran, K Radhakrishnan, N Dharmarasu, M Agrawal, Z Wang, ... Semiconductor Science and Technology 31 (9), 095003, 2016 | 13 | 2016 |
| Non-linear thermal resistance model for the simulation of high power GaN-based devices S García-Sánchez, I Íñiguez-de-la-Torre, S Pérez, K Ranjan, M Agrawal, ... Semiconductor Science and Technology 36 (5), 055002, 2021 | 11 | 2021 |
| In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron … R Lingaparthi, N Dharmarasu, K Radhakrishnan, M Agrawal Thin Solid Films 708, 138128, 2020 | 11 | 2020 |
| Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—Experimental evidence of the hole … R Lingaparthi, N Dharmarasu, K Radhakrishnan, L Huo Applied Physics Letters 123 (9), 092105, 2023 | 10 | 2023 |
| Enhanced NO2 Gas Sensing Performance of Multigate Pt/AlGaN/GaN High Electron Mobility Transistors A Ranjan, R Lingaparthi, N Dharmarasu, K Radhakrishnan Journal of The Electrochemical Society 168 (4), 047502, 2021 | 9 | 2021 |
| Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si (111) L Ravikiran, K Radhakrishnan, N Dharmarasu, M Agrawal, ... Journal of Applied Physics 114 (12), 2013 | 9 | 2013 |
| Effect of stress mitigating layers on the structural properties of GaN grown by ammonia molecular beam epitaxy on 100 mm Si (111) L Ravikiran, M Agrawal, N Dharmarasu, K Radhakrishnan Japanese Journal of Applied Physics 52 (8S), 08JE05, 2013 | 9 | 2013 |
| Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy M Agrawal, L Ravikiran, N Dharmarasu, K Radhakrishnan, ... AIP Advances 7 (1), 2017 | 6 | 2017 |
| Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si (111) L Ravikiran, K Radhakrishnan, S Munawar Basha, N Dharmarasu, ... Journal of Applied Physics 117 (24), 2015 | 6 | 2015 |
| Effects of oxygen annealing of R Lingaparthi, QT Thieu, K Sasaki, A Takatsuka, F Otsuka, S Yamakoshi ECS J. Solid State Sci. Technol 9 (2), 2020 | 5 | 2020 |
| Investigation of thin-barrier AlGaN/GaN HEMT heterostructures for enhanced gas-sensing performance A Ranjan, R Lingaparthi, N Dharmarasu, K Radhakrishnan IEEE Sensors Journal 22 (19), 18306-18312, 2022 | 4 | 2022 |
| Effects of Si doping well beyond the Mott transition limit in GaN epilayers grown by plasma-assisted molecular beam epitaxy R Lingaparthi, N Dharmarasu, K Radhakrishnan, Y Zheng Journal of Physics D: Applied Physics 55 (9), 095110, 2021 | 4 | 2021 |
| Origin of tensile strain in GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (1 1 1) by ammonia molecular beam epitaxy M Agrawal, N Dharmarasu, K Radhakrishnan, L Ravikiran Journal of crystal growth 378, 283-286, 2013 | 4 | 2013 |
K RadhakrishnanNanyang technological university在 ntu.edu.sg 的电子邮件经过验证
