受强制性开放获取政策约束的文章 - Nidhin Kurian Kalarickal了解详情
无法在其他位置公开访问的文章：2 篇
Design of transistors using high-permittivity materials
Z Xia, C Wang, NK Kalarickal, S Stemmer, S Rajan
IEEE Transactions on Electron Devices 66 (2), 896-900, 2019
强制性开放获取政策： US Department of Defense
High-Current Perovskite Oxide BaTiO3/BaSnO3 Heterostructure Field Effect Transistors
J Cheng, C Wang, C Freeze, O Shoron, N Combs, H Yang, NK Kalarickal, ...
IEEE Electron Device Letters 41 (4), 621-624, 2020
强制性开放获取政策： US Department of Defense
可在其他位置公开访问的文章：23 篇
-Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz
Z Xia, H Xue, C Joishi, J Mcglone, NK Kalarickal, SH Sohel, M Brenner, ...
IEEE Electron Device Letters 40 (7), 1052-1055, 2019
强制性开放获取政策： US National Science Foundation, US Department of Defense
Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field
Z Xia, H Chandrasekar, W Moore, C Wang, AJ Lee, J McGlone, ...
Applied Physics Letters 115 (25), 2019
强制性开放获取政策： US National Science Foundation, US Department of Defense
High electron density β-(Al0. 17Ga0. 83) 2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer
NK Kalarickal, Z Xia, JF McGlone, Y Liu, W Moore, AR Arehart, SA Ringel, ...
Journal of Applied Physics 127 (21), 2020
强制性开放获取政策： US National Science Foundation, US Department of Defense
β-(Al0.18Ga0.82)2O3/Ga2O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm
NK Kalarickal, Z Xia, HL Huang, W Moore, Y Liu, M Brenner, J Hwang, ...
IEEE Electron Device Letters 42 (6), 899-902, 2021
强制性开放获取政策： US National Science Foundation, US Department of Defense
Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3
NK Kalarickal, Z Xia, J McGlone, S Krishnamoorthy, W Moore, M Brenner, ...
Applied Physics Letters 115 (15), 2019
强制性开放获取政策： US Department of Defense
Electrostatic engineering using extreme permittivity materials for ultra-wide bandgap semiconductor transistors
NK Kalarickal, Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, JF McGlone, ...
IEEE Transactions on Electron Devices 68 (1), 29-35, 2020
强制性开放获取政策： US Department of Defense
Mg acceptor doping in MOCVD (010) β-Ga2O3
Z Feng, AFM Bhuiyan, NK Kalarickal, S Rajan, H Zhao
Applied Physics Letters 117 (22), 2020
强制性开放获取政策： US National Science Foundation, US Department of Defense
Atomic scale investigation of aluminum incorporation, defects, and phase stability in β-(AlxGa1− x) 2O3 films
JM Johnson, HL Huang, M Wang, S Mu, JB Varley, AFM Uddin Bhuiyan, ...
APL Materials 9 (5), 2021
强制性开放获取政策： US National Science Foundation, US Department of Energy, US Department of …
β-Ga2O3 Schottky barrier diodes with 4.1 MV/cm field strength by deep plasma etching field-termination
S Dhara, NK Kalarickal, A Dheenan, C Joishi, S Rajan
Applied Physics Letters 121 (20), 2022
强制性开放获取政策： US Department of Energy, US Department of Defense
Planar and three-dimensional damage-free etching of β-Ga2O3 using atomic gallium flux
NK Kalarickal, A Fiedler, S Dhara, HL Huang, AFM Bhuiyan, MW Rahman, ...
Applied Physics Letters 119 (12), 2021
强制性开放获取政策： US Department of Defense
Integration of high permittivity BaTiO3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors
MW Rahman, NK Kalarickal, H Lee, T Razzak, S Rajan
Applied Physics Letters 119 (19), 2021
强制性开放获取政策： US Department of Energy, US Department of Defense
Spectral Measurement of the Breakdown Limit of and Tunnel Ionization of Self-Trapped Excitons and Holes
MMR Adnan, D Verma, Z Xia, NK Kalarickal, S Rajan, RC Myers
Physical Review Applied 16 (3), 034011, 2021
强制性开放获取政策： US National Science Foundation, US Department of Defense
Nanoscale etching of perovskite oxides for field effect transistor applications
J Cheng, H Yang, C Wang, N Combs, C Freeze, O Shoron, W Wu, ...
Journal of Vacuum Science & Technology B 38 (1), 2020
强制性开放获取政策： US Department of Defense
β-Ga2O3 trench Schottky diodes by low-damage Ga-atomic beam etching
S Dhara, NK Kalarickal, A Dheenan, SI Rahman, C Joishi, S Rajan
Applied Physics Letters 123 (2), 2023
强制性开放获取政策： US Department of Energy, US Department of Defense
High-permittivity dielectric edge termination for vertical high voltage devices
HS Lee, NK Kalarickal, MW Rahman, Z Xia, W Moore, C Wang, S Rajan
Journal of Computational Electronics 19, 1538-1545, 2020
强制性开放获取政策： US Department of Energy, US Department of Defense
β-Ga2O3 MESFETs with insulating Mg-doped buffer grown by plasma-assisted molecular beam epitaxy
AV Dheenan, JF McGlone, NK Kalarickal, HL Huang, M Brenner, J Hwang, ...
Applied Physics Letters 121 (11), 2022
强制性开放获取政策： US Department of Energy, US Department of Defense
Materials and device engineering for high-performance gallium oxide devices
Z Xia, NK Kalarickal, S Rajan
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2020
强制性开放获取政策： US National Science Foundation, US Department of Energy, US Department of …
Demonstration of self-aligned β-Ga2O3 δ-doped MOSFETs with current density> 550 mA/mm
NK Kalarickal, A Dheenan, JF McGlone, S Dhara, M Brenner, SA Ringel, ...
Applied Physics Letters 122 (11), 2023
强制性开放获取政策： US Department of Defense
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