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Yanfeng Lao
Yanfeng Lao
Archcom Technology, Inc
没有经过验证的电子邮件地址
标题
引用次数
引用次数
年份
Annealing effects on the microstructure and photoluminescence properties of Ni-doped ZnO films
DJ Qiu, HZ Wu, AM Feng, YF Lao, NB Chen, TN Xu
Applied surface science 222 (1-4), 263-268, 2004
882004
Tunable hot-carrier photodetection beyond the bandgap spectral limit
YF Lao, AGU Perera, LH Li, SP Khanna, EH Linfield, HC Liu
Nature Photonics 8 (5), 412-418, 2014
812014
Room temperature continuous-wave operation of InAs∕ InP (100) quantum dot lasers grown by gas-source molecular-beam epitaxy
SG Li, Q Gong, YF Lao, K He, J Li, YG Zhang, SL Feng, HL Wang
Applied Physics Letters 93 (11), 2008
562008
Light-hole and heavy-hole transitions for high-temperature long-wavelength infrared detection
YF Lao, P Pitigala, AGU Perera, HC Liu, M Buchanan, ZR Wasilewski, ...
Applied Physics Letters 97 (9), 2010
542010
InAs/GaAs p-type quantum dot infrared photodetector with higher efficiency
YF Lao, S Wolde, AG Unil Perera, YH Zhang, TM Wang, HC Liu, JO Kim, ...
Applied Physics Letters 103 (24), 2013
492013
Experimental observation of large ramified Au aggregates on melting glass surfaces
GX Ye, AG Xia, GL Gao, YF Lao, XM Tao
Physical Review B 63 (12), 125405, 2001
462001
Transparent thin-film transistors using ZnMgO as dielectrics and channel
H Wu, J Liang, G Jin, Y Lao, T Xu
IEEE transactions on electron devices 54 (11), 2856-2859, 2007
442007
Two-color quantum dot laser with tunable wavelength gap
SG Li, Q Gong, YF Lao, HD Yang, S Gao, P Chen, YG Zhang, SL Feng, ...
Applied Physics Letters 95 (25), 2009
382009
Dielectric function model for p-type semiconductor inter-valence band transitions
YF Lao, AG Unil Perera
Journal of Applied Physics 109 (10), 2011
352011
Temperature-dependent internal photoemission probe for band parameters
YF Lao, AGU Perera
Physical Review B—Condensed Matter and Materials Physics 86 (19), 195315, 2012
332012
Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films
RC Jayasinghe, YF Lao, AGU Perera, M Hammar, CF Cao, HZ Wu
Journal of Physics: Condensed Matter 24 (43), 435803, 2012
312012
Noise, gain, and capture probability of p-type InAs-GaAs quantum-dot and quantum dot-in-well infrared photodetectors
S Wolde, YF Lao, AG Unil Perera, YH Zhang, TM Wang, JO Kim, ...
Journal of Applied Physics 121 (24), 2017
292017
Anomalous electrical conductivity of a gold thin film percolation system
XM Tao, GX Ye, QL Ye, JS Jin, YF Lao, ZK Jiao
Physical Review B 66 (11), 115406, 2002
272002
Structural and electrical properties of an Au film system deposited on silicone oil surfaces
B Yang, AG Xia, JS Jin, QL Ye, YF Lao, ZK Jiao, GX Ye
Journal of Physics: Condensed Matter 14 (43), 10051, 2002
252002
Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs
HP Lei, HZ Wu, YF Lao, M Qi, AZ Li, WZ Shen
Journal of crystal growth 256 (1-2), 96-102, 2003
242003
Vascular architecture of the human optic chiasma and bitemporal hemianopia.
Y Lao, H Gao, Y Zhong
Chinese Medical Sciences Journal= Chung-kuo i Hsueh k'o Hsueh tsa Chih 9 (1 …, 1994
211994
Band offsets and carrier dynamics of type-II InAs/GaSb superlattice photodetectors studied by internal photoemission spectroscopy
YF Lao, P Pitigala, AG Unil Perera, E Plis, SS Krishna, ...
Applied Physics Letters 103 (18), 2013
182013
InAs/GaAs quantum dot and dots-in-well infrared photodetectors based on p-type valence-band intersublevel transitions
AGU Perera, YF Lao, S Wolde, YH Zhang, TM Wang, JO Kim, ...
Infrared Physics & Technology 70, 15-19, 2015
172015
Study of valence-band intersublevel transitions in InAs/GaAs quantum dots-in-well infrared photodetectors
YF Lao, S Wolde, AG Unil Perera, YH Zhang, TM Wang, JO Kim, ...
Applied Physics Letters 104 (17), 2014
152014
High temperature terahertz response in a p-type quantum dot-in-well photodetector
S Wolde, YF Lao, AG Unil Perera, YH Zhang, TM Wang, JO Kim, ...
Applied Physics Letters 105 (15), 2014
132014
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