| 4.7 A 65nm ReRAM-enabled nonvolatile processor with 6× reduction in restore time and 4× higher clock frequency using adaptive data retention and self-write-termination … Y Liu, Z Wang, A Lee, F Su, CP Lo, Z Yuan, CC Lin, Q Wei, Y Wang, ... 2016 IEEE International Solid-State Circuits Conference (ISSCC), 84-86, 2016 | 114 | 2016 |
| 17.5 A 3T1R nonvolatile TCAM using MLC ReRAM with sub-1ns search time MF Chang, CC Lin, A Lee, CC Kuo, GH Yang, HJ Tsai, TF Chen, SS Sheu, ... 2015 IEEE International Solid-State Circuits Conference-(ISSCC) Digest of …, 2015 | 86 | 2015 |
| Challenges and circuit techniques for energy-efficient on-chip nonvolatile memory using memristive devices MF Chang, A Lee, PC Chen, CJ Lin, YC King, SS Sheu, TK Ku IEEE Journal on Emerging and Selected Topics in Circuits and Systems 5 (2 …, 2015 | 66 | 2015 |
| A 3T1R nonvolatile TCAM using MLC ReRAM for frequent-off instant-on filters in IoT and big-data processing MF Chang, CC Lin, A Lee, YN Chiang, CC Kuo, GH Yang, HJ Tsai, ... IEEE Journal of Solid-State Circuits 52 (6), 1664-1679, 2017 | 63 | 2017 |
| RRAM-based 7T1R nonvolatile SRAM with 2x reduction in store energy and 94x reduction in restore energy for frequent-off instant-on applications A Lee, MF Chang, CC Lin, CF Chen, MS Ho, CC Kuo, PL Tseng, SS Sheu, ... 2015 Symposium on VLSI Circuits (VLSI Circuits), C76-C77, 2015 | 61 | 2015 |
| Write error rate and read disturbance in electric-field-controlled magnetic random-access memory C Grezes, H Lee, A Lee, S Wang, F Ebrahimi, X Li, K Wong, JA Katine, ... IEEE Magnetics Letters 8, 1-5, 2016 | 59 | 2016 |
| A ReRAM-based nonvolatile flip-flop with self-write-termination scheme for frequent-off fast-wake-up nonvolatile processors A Lee, CP Lo, CC Lin, WH Chen, KH Hsu, Z Wang, F Su, Z Yuan, Q Wei, ... IEEE Journal of Solid-State Circuits 52 (8), 2194-2207, 2017 | 54 | 2017 |
| Large exchange splitting in monolayer graphene magnetized by an antiferromagnet Y Wu, G Yin, L Pan, AJ Grutter, Q Pan, A Lee, DA Gilbert, JA Borchers, ... Nature Electronics 3 (10), 604-611, 2020 | 50 | 2020 |
| TSV-free FinFET-based Monolithic 3D+-IC with computing-in-memory SRAM cell for intelligent IoT devices FK Hsueh, HY Chiu, CH Shen, JM Shieh, YT Tang, CC Yang, HC Chen, ... 2017 IEEE International Electron Devices Meeting (IEDM), 12.6. 1-12.6. 4, 2017 | 39 | 2017 |
| Analysis and compact modeling of magnetic tunnel junctions utilizing voltage-controlled magnetic anisotropy H Lee, A Lee, S Wang, F Ebrahimi, P Gupta, PK Amiri, KL Wang IEEE Transactions on Magnetics 54 (4), 1-9, 2018 | 34 | 2018 |
| A ReRAM-based single-NVM nonvolatile flip-flop with reduced stress-time and write-power against wide distribution in write-time by using self-write-termination scheme for … CP Lo, WH Chen, Z Wang, A Lee, KH Hsu, F Su, YC King, CJ Lin, Y Liu, ... 2016 IEEE international electron devices meeting (IEDM), 16.3. 1-16.3. 4, 2016 | 25 | 2016 |
| A word line pulse circuit technique for reliable magnetoelectric random access memory H Lee, A Lee, S Wang, F Ebrahimi, P Gupta, PK Amiri, KL Wang IEEE Transactions on Very Large Scale Integration (VLSI) Systems 25 (7 …, 2017 | 21 | 2017 |
| A spintronic voltage-controlled stochastic oscillator for event-driven random sampling H Lee, C Grezes, A Lee, F Ebrahimi, PK Amiri, KL Wang IEEE Electron Device Letters 38 (2), 281-284, 2016 | 21 | 2016 |
| Read circuits for resistive memory (ReRAM) and memristor-based nonvolatile Logics MF Chang, A Lee, CC Lin, MS Ho, PC Chen, CC Kuo, MP Chen, ... The 20th Asia and South Pacific Design Automation Conference, 569-574, 2015 | 17 | 2015 |
| Array-level analysis of magneto-electric random-access memory for high-performance embedded applications H Lee, A Lee, F Ebrahimi, PK Amiri, KL Wang IEEE Magnetics Letters 8, 1-5, 2017 | 14 | 2017 |
| A dual-data line read scheme for high-speed low-energy resistive nonvolatile memories A Lee, H Lee, F Ebrahimi, B Lam, WH Chen, MF Chang, PK Amiri, ... IEEE Transactions on Very Large Scale Integration (VLSI) Systems 26 (2), 272-279, 2017 | 9 | 2017 |
| An embedded ReRAM using a small-offset sense amplifier for low-voltage operations A Lee, CC Lin, TC Yang, MF Chang VLSI Design, Automation and Test (VLSI-DAT), 1-4, 2015 | 9 | 2015 |
| Challenges at circuit designs for resistive-type Nonvolatile memory and nonvolatile logics in mobile and cloud applications MF Chang, A Lee, CC Kuo, SS Sheu, FT Chen, TK Ku, YP Liu, HZ Yang, ... 2014 12th IEEE International Conference on Solid-State and Integrated …, 2014 | 8 | 2014 |
| A thermodynamic core using voltage-controlled spin–orbit-torque magnetic tunnel junctions A Lee, B Dai, D Wu, H Wu, RN Schwartz, KL Wang Nanotechnology 32 (50), 505405, 2021 | 5 | 2021 |
| Full memory encryption with magnetoelectric in-memory computing A Lee, KL Wang 2019 International Symposium on VLSI Technology, Systems and Application …, 2019 | 5 | 2019 |
