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引用次数
引用次数
年份
Graphene-based wearable sensors
Y Qiao, X Li, T Hirtz, G Deng, Y Wei, M Li, S Ji, Q Wu, J Jian, F Wu, Y Shen, ...
Nanoscale 11 (41), 18923-18945, 2019
1282019
Flexible Two-Dimensional Ti3C2 MXene Films as Thermoacoustic Devices
GY Gou, ML Jin, BJ Lee, H Tian, F Wu, YT Li, ZY Ju, JM Jian, XS Geng, ...
ACS nano 13 (11), 12613-12620, 2019
582019
A hardware Markov chain algorithm realized in a single device for machine learning
H Tian, XF Wang, MA Mohammad, GY Gou, F Wu, Y Yang, TL Ren
Nature communications 9 (1), 4305, 2018
512018
Graphene‐based devices for thermal energy conversion and utilization
YT Li, Y Tian, MX Sun, T Tu, ZY Ju, GY Gou, YF Zhao, ZY Yan, F Wu, ...
Advanced Functional Materials 30 (8), 1903888, 2020
452020
Graphene-based thermoacoustic sound source
Y Qiao, G Gou, F Wu, J Jian, X Li, T Hirtz, Y Zhao, Y Zhi, F Wang, H Tian, ...
ACS nano 14 (4), 3779-3804, 2020
402020
Fabricating molybdenum disulfide memristors
Y Qiao, T Hirtz, F Wu, G Deng, X Li, Y Zhi, H Tian, Y Yang, TL Ren
ACS Applied Electronic Materials 2 (2), 346-370, 2019
322019
High performance 2D perovskite/graphene optical synapses as artificial eyes
H Tian, X Wang, F Wu, Y Yang, TL Ren
2018 IEEE International Electron Devices Meeting (IEDM), 38.6. 1-38.6. 4, 2018
292018
An efficient flexible graphene-based light-emitting device
G Jiang, H Tian, XF Wang, T Hirtz, F Wu, YC Qiao, GY Gou, YH Wei, ...
Nanoscale Advances 1 (12), 4745-4754, 2019
272019
Gate-Tunable Negative Differential Resistance Behaviors in a hBN-Encapsulated BP-MoS2 Heterojunction
TLR Fan Wu, He Tian, Zhaoyi Yan, Jie Ren, Thomas Hirtz , Guangyang Gou, Yang ...
ACS Applied Materials & Interfaces, 2021
262021
The origin of CBRAM with high linearity, on/off ratio, and state number for neuromorphic computing
Y Liu, J Gao, F Wu, H Tian, TL Ren
IEEE Transactions on Electron Devices 68 (5), 2568-2571, 2021
152021
A novel thermal acoustic device based on vertical graphene film
T Tu, ZY Ju, YT Li, GY Gou, Y Tian, F Wu, ZY Yan, HF Liu, TZ Yang, ...
AIP Advances 9 (7), 2019
142019
Ambipolar transport compact models for two-dimensional materials based field-effect transistors
Z Yan, G Gou, J Ren, F Wu, Y Shen, H Tian, Y Yang, TL Ren
Tsinghua Science and Technology 26 (5), 574-591, 2021
32021
Transistor Subthreshold Swing Lowered by 2-D Heterostructures
F Wu, H Tian, Z Yan, Y Shen, J Ren, Y Yang, TL Ren
IEEE Transactions on Electron Devices 68 (1), 411-414, 2020
22020
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