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Margarita Stepikhova
Margarita Stepikhova
Institute for Physics of Microstructures, Senior Researcher
在 ipm.sci-nnov.ru 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
Optically active erbium centers in silicon
H Przybylinska, W Jantsch, Y Suprun-Belevitch, M Stepikhova, ...
Physical Review B 54 (4), 2532, 1996
2751996
Dielectric function of nanocrystalline silicon with few nanometers (< 3 nm) grain size
M Losurdo, MM Giangregorio, P Capezzuto, G Bruno, MF Cerqueira, ...
Applied physics letters 82 (18), 2993-2995, 2003
692003
Different Er centres in Si and their use for electroluminescent devices
W Jantsch, S Lanzerstorfer, L Palmetshofer, M Stepikhova, H Preier
Journal of luminescence 80 (1-4), 9-17, 1998
641998
Photonic bound states in the continuum in Si structures with the self‐assembled Ge nanoislands
SA Dyakov, MV Stepikhova, AA Bogdanov, AV Novikov, DV Yurasov, ...
Laser & Photonics Reviews 15 (7), 2000242, 2021
592021
Optical Er-doping of Si during sublimational molecular beam epitaxy
BA Andreev, AY Andreev, H Ellmer, H Hutter, ZF Krasil'nik, VP Kuznetsov, ...
Journal of crystal growth 201, 534-537, 1999
461999
Light emission from Ge (Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities
MV Stepikhova, AV Novikov, AN Yablonskiy, MV Shaleev, DE Utkin, ...
Semiconductor Science and Technology 34 (2), 024003, 2019
362019
1.5 μm infrared photoluminescence phenomena in Er-doped porous silicon
M Stepikhova, L Palmetshofer, W Jantsch, HJ Von Bardeleben, ...
Applied physics letters 74 (4), 537-539, 1999
361999
Properties of optically active Si: Er and Si1− xGex layers grown by the sublimation MBE method:[Thin Solid Films 369 (2000) 320–323]
MV Stepikhova, BA Andreev, VB Shmagin, ZF Krasil'Nik, VP Kuznetsov, ...
Thin Solid Films 381 (1), 164-169, 2001
332001
Erbium doped silicon single-and multilayer structures for light-emitting device and laser applications
ZF Krasilnik, BA Andreev, DI Kryzhkov, LV Krasilnikova, VP Kuznetsov, ...
Journal of materials research 21 (3), 574-583, 2006
282006
Realization of photo-and electroluminescent Si: Er structures by the method of sublimation molecular beam epitaxy
B Andreev, V Chalkov, O Gusev, A Emel'yanov, Z Krasil'nik, V Kuznetsov, ...
Nanotechnology 13 (1), 97, 2002
282002
Si/SiGe: Er/Si structures for laser realization: Theoretical analysis and luminescent studies
MV Stepikhova, LV Krasil’nikova, ZF Krasil’nik, VG Shengurov, ...
Journal of crystal growth 288 (1), 65-69, 2006
242006
Excitation of ions in silicon dioxide films thermally grown on silicon
A Kozanecki, M Stepikhova, S Lanzerstorfer, W Jantsch, L Palmetshofer, ...
Applied physics letters 73 (20), 2929-2931, 1998
241998
A. Kozanecki, RJ Wilson and BJ Sealy
H Przybylinska, W Jantsch, Y Suprun-Belevitch, M Stepikhova, ...
Phys. Rev. B 54, 2532, 1996
211996
Optical properties of erbium-doped xerogels embedded in porous anodic alumina
NV Gaponenko, GK Malyarevich, DA Tsyrkunou, EA Stepanova, ...
Optical Materials 28 (6-7), 688-692, 2006
202006
Characteristics of photoluminescence in SiO2 with Si nanoinclusions produced by ion implantation
DI Tetelbaum, IA Karpovich, MV Stepikhova, VG Shengurov, KA Markov, ...
Surface Investigation X-Ray, Synchrotron and Neutron Techniques 14 (5), 601-604, 1998
201998
On the origin of 1.5 μm luminescence in porous silicon coated with sol–gel derived erbium-doped Fe2O3 films
NV Gaponenko, AV Mudryi, OV Sergeev, M Stepikhova, L Palmetshofer, ...
Journal of luminescence 80 (1-4), 399-403, 1998
191998
Donor activity of ion-implanted erbium in silicon
L Palmetshofer, Y Suprun-Belevich, M Stepikhova
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1997
181997
Барьерная фотопроводимость в эпитаксиальных пленках GaAs и InP
ИА Карпович, БИ Бедный, НВ Байдусь, СМ Планкина, МВ Степихова, ...
ФТП 23, 2164, 1989
171989
One-stage formation of two-dimensional photonic crystal and spatially ordered arrays of self-assembled ge (Si) nanoislandson pit-patterned silicon-on-insulator substrate
AV Novikov, ZV Smagina, MV Stepikhova, VA Zinovyev, SA Rudin, ...
Nanomaterials 11 (4), 909, 2021
152021
Особенности фотолюминесценции в SiO2 с нановключениями кремния, полученными методом ионной имплантации
ДИ Тетельбаум, ИА Карпович, МВ Сте-пихова, ВГ Шенгуров, ...
Поверхность., 31, 1998
151998
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