Optically active erbium centers in silicon H Przybylinska, W Jantsch, Y Suprun-Belevitch, M Stepikhova, ... Physical Review B 54 (4), 2532, 1996 | 275 | 1996 |
Dielectric function of nanocrystalline silicon with few nanometers (< 3 nm) grain size M Losurdo, MM Giangregorio, P Capezzuto, G Bruno, MF Cerqueira, ... Applied physics letters 82 (18), 2993-2995, 2003 | 69 | 2003 |
Different Er centres in Si and their use for electroluminescent devices W Jantsch, S Lanzerstorfer, L Palmetshofer, M Stepikhova, H Preier Journal of luminescence 80 (1-4), 9-17, 1998 | 64 | 1998 |
Photonic bound states in the continuum in Si structures with the self‐assembled Ge nanoislands SA Dyakov, MV Stepikhova, AA Bogdanov, AV Novikov, DV Yurasov, ... Laser & Photonics Reviews 15 (7), 2000242, 2021 | 59 | 2021 |
Optical Er-doping of Si during sublimational molecular beam epitaxy BA Andreev, AY Andreev, H Ellmer, H Hutter, ZF Krasil'nik, VP Kuznetsov, ... Journal of crystal growth 201, 534-537, 1999 | 46 | 1999 |
Light emission from Ge (Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities MV Stepikhova, AV Novikov, AN Yablonskiy, MV Shaleev, DE Utkin, ... Semiconductor Science and Technology 34 (2), 024003, 2019 | 36 | 2019 |
1.5 μm infrared photoluminescence phenomena in Er-doped porous silicon M Stepikhova, L Palmetshofer, W Jantsch, HJ Von Bardeleben, ... Applied physics letters 74 (4), 537-539, 1999 | 36 | 1999 |
Properties of optically active Si: Er and Si1− xGex layers grown by the sublimation MBE method:[Thin Solid Films 369 (2000) 320–323] MV Stepikhova, BA Andreev, VB Shmagin, ZF Krasil'Nik, VP Kuznetsov, ... Thin Solid Films 381 (1), 164-169, 2001 | 33 | 2001 |
Erbium doped silicon single-and multilayer structures for light-emitting device and laser applications ZF Krasilnik, BA Andreev, DI Kryzhkov, LV Krasilnikova, VP Kuznetsov, ... Journal of materials research 21 (3), 574-583, 2006 | 28 | 2006 |
Realization of photo-and electroluminescent Si: Er structures by the method of sublimation molecular beam epitaxy B Andreev, V Chalkov, O Gusev, A Emel'yanov, Z Krasil'nik, V Kuznetsov, ... Nanotechnology 13 (1), 97, 2002 | 28 | 2002 |
Si/SiGe: Er/Si structures for laser realization: Theoretical analysis and luminescent studies MV Stepikhova, LV Krasil’nikova, ZF Krasil’nik, VG Shengurov, ... Journal of crystal growth 288 (1), 65-69, 2006 | 24 | 2006 |
Excitation of ions in silicon dioxide films thermally grown on silicon A Kozanecki, M Stepikhova, S Lanzerstorfer, W Jantsch, L Palmetshofer, ... Applied physics letters 73 (20), 2929-2931, 1998 | 24 | 1998 |
A. Kozanecki, RJ Wilson and BJ Sealy H Przybylinska, W Jantsch, Y Suprun-Belevitch, M Stepikhova, ... Phys. Rev. B 54, 2532, 1996 | 21 | 1996 |
Optical properties of erbium-doped xerogels embedded in porous anodic alumina NV Gaponenko, GK Malyarevich, DA Tsyrkunou, EA Stepanova, ... Optical Materials 28 (6-7), 688-692, 2006 | 20 | 2006 |
Characteristics of photoluminescence in SiO2 with Si nanoinclusions produced by ion implantation DI Tetelbaum, IA Karpovich, MV Stepikhova, VG Shengurov, KA Markov, ... Surface Investigation X-Ray, Synchrotron and Neutron Techniques 14 (5), 601-604, 1998 | 20 | 1998 |
On the origin of 1.5 μm luminescence in porous silicon coated with sol–gel derived erbium-doped Fe2O3 films NV Gaponenko, AV Mudryi, OV Sergeev, M Stepikhova, L Palmetshofer, ... Journal of luminescence 80 (1-4), 399-403, 1998 | 19 | 1998 |
Donor activity of ion-implanted erbium in silicon L Palmetshofer, Y Suprun-Belevich, M Stepikhova Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1997 | 18 | 1997 |
Барьерная фотопроводимость в эпитаксиальных пленках GaAs и InP ИА Карпович, БИ Бедный, НВ Байдусь, СМ Планкина, МВ Степихова, ... ФТП 23, 2164, 1989 | 17 | 1989 |
One-stage formation of two-dimensional photonic crystal and spatially ordered arrays of self-assembled ge (Si) nanoislandson pit-patterned silicon-on-insulator substrate AV Novikov, ZV Smagina, MV Stepikhova, VA Zinovyev, SA Rudin, ... Nanomaterials 11 (4), 909, 2021 | 15 | 2021 |
Особенности фотолюминесценции в SiO2 с нановключениями кремния, полученными методом ионной имплантации ДИ Тетельбаум, ИА Карпович, МВ Сте-пихова, ВГ Шенгуров, ... Поверхность., 31, 1998 | 15 | 1998 |