The dawn of Ga2O3 HEMTs for high power electronics-A review R Singh, TR Lenka, DK Panda, RT Velpula, B Jain, HQT Bui, HPT Nguyen Materials Science in Semiconductor Processing 119, 105216, 2020 | 124 | 2020 |
Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT TR Lenka, AK Panda Semiconductors 45 (5), 650-656, 2011 | 102 | 2011 |
Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays HQT Bui, RT Velpula, B Jain, OH Aref, HD Nguyen, TR Lenka, ... Micromachines 10 (8), 492, 2019 | 65 | 2019 |
High performance electron blocking layer-free InGaN/GaN nanowire white-light-emitting diodes B Jain, RT Velpula, HQT Bui, HD Nguyen, TR Lenka, TK Nguyen, ... Optics express 28 (1), 665-675, 2020 | 54 | 2020 |
Impact of Thin High-K Dielectrics and Gate Metals on RF Characteristics of 3D Double Gate Junctionless Transistor A Baidya, TR Lenka, S Baishya Materials Science in Semiconductor Processing 71, 413–420, 2017 | 41 | 2017 |
Numerical simulations on CZTS/CZTSe based solar cell with ZnSe as an alternative buffer layer using SCAPS- 1D A Srivastava, P Dua, TR Lenka, SK Tripathy Materials Today: Proceedings, 2020 | 38 | 2020 |
Modelling, simulation, optimization of Si/ZnO and Si/ZnMgO heterojunction solar cells S Vallisree, R Thangavel, TR Lenka Materials Research Express 6 (2), 025910, 2018 | 37 | 2018 |
AlGaN/GaN-based HEMT on SiC substrate for microwave characteristics using different passivation layers TR Lenka, AK Panda Pramana 79, 151-163, 2012 | 37 | 2012 |
Theoretical investigations on enhancement of photovoltaic efficiency of nanostructured CZTS/ZnS/ZnO based Solar Cell device S Vallisree, R Thangavel, TR Lenka Journal of Materials Science: Materials in Electronics (JMSE) 29 (9), 7262–7272, 2018 | 36 | 2018 |
A Model for Doubly Clamped Piezoelectric Energy Harvesters with Segmented Electrodes R Kashyap, TR Lenka, S Baishya IEEE Electron Device Letters 36 (12), 1369-1372, 2015 | 36 | 2015 |
Improving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure RT Velpula, B Jain, HQT Bui, FM Shakiba, J Jude, M Tumuna, HD Nguyen, ... Applied Optics 59 (17), 5276-5281, 2020 | 32 | 2020 |
InGaN-based solar cells: a wide solar spectrum harvesting technology for twenty-first century SR Routray, TR Lenka CSI Transactions on ICT, 1-14, 2017 | 31 | 2017 |
Modeling of Forward Gate Leakage Current in MOSHEMT Using Trap-Assisted Tunneling and Poole-Frenkel Emission R Swain, K Jena, TR Lenka IEEE Transactions on Electron Devices 63 (6), 2346 - 2352, 2016 | 30 | 2016 |
Role of nanoscale AlN and InN for the microwave characteristics of AlGaN/(Al, In) N/GaN-based HEMT TR Lenka, AK Panda Semiconductors 45, 1211-1218, 2011 | 30 | 2011 |
Modeling and comparative analysis of DC characteristics of AlGaN/GaN HEMT and MOSHEMT devices K Jena, R Swain, TR Lenka International Journal of Numerical Modelling: Electronic Networks, Devices …, 2016 | 28 | 2016 |
RF and microwave characteristics of a 10 nm thick InGaN-channel gate recessed HEMT TR Lenka, GN Dash, AK Panda Journal of Semiconductors 34 (11), 114003, 2013 | 28 | 2013 |
A novel β‐Ga2O3 HEMT with fT of 166 GHz and X‐band POUT of 2.91 W/mm R Singh, TR Lenka, RT Velpula, B Jain, HQT Bui, HPT Nguyen International Journal of Numerical Modelling: Electronic Networks, Devices …, 2020 | 27 | 2020 |
Mixed-mode simulation and analysis of 3D double gate junctionless nanowire transistor for CMOS circuit applications A Baidya, TR Lenka, S Baishya Superlattices and Microstructures 100, 14-23, 2016 | 27 | 2016 |
Effect of structural parameters on 2DEG density and C~V characteristics of AlxGa1−xN/AlN/GaN-based HEMT TR Lenka, AK Panda NISCAIR-CSIR, India, 2011 | 26 | 2011 |
Enhanced Photodetection by Glancing Angle Deposited Vertically Aligned TiO2 Nanowires B Shougaijam, R Swain, C Ngangbam, TR Lenka IEEE Transactions on Nanotechnology 15 (3), 389 – 394, 2016 | 23 | 2016 |